Search results for "CMO"
showing 10 items of 145 documents
Why Bring Organic and Molecular Electronics to Spintronics
2015
Organic spintronics field is an emerging field at the frontier between organic chemistry and spintronics. Exploiting the peculiarity of these two fields, it combines the flexibility, versatility and low production cost of organic materials with the nonvolatility, spin degree of freedom and beyond CMOS capabilities offered by spintronics. Before starting the discussion on the organic spintronics field, in this chapter will be provided a brief introduction on organic and molecular electronics and the specificities of molecules. This will help to understand the advantages that molecular systems can bring to spintronics.
THE MAIN EFFECTS OF GREEN HARVESTING ON THE SICILIAN WINE COOPERATIVES
2013
In Sicily in the 2010-2012 period green harvesting is the most successful of the 9 measures provided by the Italian National Support Programme (NSP) for wine. Its main goal is to contribute to restoring the balance between supply and demand by destructing or removing grape bunches in their immature stage in order to prevent market crises. The paper firstly presents the main results of a "three-year" application of Green Harvesting measure to the Sicilian wine sector. Firstly the implementation of Green Harvesting Measure was examined at EU, national and regional level through the analysis of the available statistical data; at a later stage its effects on the Sicilian wine sector were invest…
ICMOL, INSTITUT DE CIÈNCIA MOLECULAR
2008
L'Institut de Ciència Molecular de la Universitat de València treballa en el disseny i la síntesi de molècules, agrupacions moleculars i materials moleculars, amb propietats d'interés tecnològic. l'ICMOL es distingix per desenvolupar una investigació puntera, en els aspectes més bàsics de la Ciència Molecular, i per aprofitar el coneixement adquirit per a desenvolupar aplicacions pràctiques. Este potencial per a desenvolupar aplicacions útils atrau a empreses del sector tecnològic que sovint participen amb
CMOS-compatible field effect nanoscale gas-sensor: Operation and annealing models
2008
Complete modelling of electrically controlled nanoscale gas sensors with Poisson, Wolkenstein, Fokker-Planck and continuity is presented. Based on a plausible Drift explanation we developed suitable models for sensitivity control and operational modes. An onset for CMOS-complying annealing procedures is given.
Monolithic integration of Giant Magnetoresistance (GMR) devices onto standard processed CMOS dies
2014
Giant Magnetoresistance (GMR) based technology is nowadays the preferred option for low magnetic fields sensing in disciplines such as biotechnology or microelectronics. Their compatibility with standard CMOS processes is currently investigated as a key point for the development of novel applications, requiring compact electronic readout. In this paper, such compatibility has been experimentally studied with two particular non-dedicated CMOS standards: 0.35 μm from AMS (Austria MicroSystems) and 2.5 μm from CNM (Centre Nacional de Microelectrònica, Barcelona) as representative examples. GMR test devices have been designed and fabricated onto processed chips from both technologies. In order …
CMOS Photodiode Design for Gamma Camera Application
2008
We designed new photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Micro System (AMS). The photodiode areas are respectively 1 mm × 1 mm and 0.4 mm × 0.4 mm with fill factor 98% and total chip area is 2 square millimetres. The sensor pixels show a logarithmic response in illumination and are capable of detecting very low blue light (less than 0.5 lux) . These results allow to use our sensor in new gamma camera solid-state concept.
Polarization insensitive wavelength conversion of 40 Gb/s DPSK signals in a silicon germanium waveguide
2015
We demonstrate polarization insensitive FWM-based wavelength conversion of 40Gb/s DPSK signals in a SiGe waveguide, with 0.42-dB polarization-dependent loss. A 1.5-dB Dower nenaltv was measured at a BER of 10−9.
Recent developments in the manipulation of magnetic domain walls in CoFeB–MgO wires for applications to high-density nonvolatile memories
2015
Abstract The recent discovery that magnetic domain walls can be moved under a small current without any magnetic field opens a perspective for a paradigm shift in mass storage design. However, several fundamental questions must be answered before the technology can be considered feasible. This review covers the current understanding of domain wall (DW) propagation in CoFeB–MgO structures with perpendicular magnetic anisotropy. These films exhibit a very low density of pinning centers and can be integrated in Magnetic Tunnel Junctions, making them very promising for manipulating multiple domain walls in ultra-high-density spintronic devices. Several important issues are addressed: the physic…
Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
2017
We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40nm) nitride spacers. As a result a single, silicide island gets isolated between the gates and transport is dominated by Coulomb blockade at cryogenic temperatures thanks to the small size and therefore capacitance of this island. Operation and performances comparable to devices fabricated using e-beam lithography is…
Optical Probing (EOFM/TRI): A large set of complementary applications for ultimate VLSI
2013
International audience; Electro Optical Techniques (EOFM: Electro Optical Frequency Mapping and EOP: Electro Optical Probing) and Dynamic Light Emission Techniques (TRE: Time Resolved Emission and TRI: Time Resolved Imaging) are dynamic optical probing techniques widely used at IC level for design debug and defect localization purpose. They can pinpoint the origin of timing issue or logic fault in up to date CMOS devices. Each technique has its advantages and its drawbacks allowing a common set of applications and more specific ones. We have been involved in the development of the most advanced techniques related to EOFM and TRI on various devices (down to 28nm technology). What we can expe…