Search results for "CMOS"

showing 10 items of 120 documents

Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm

2018

Abstract High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on a 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process, features a fully integrated on-chip readout, i.e. hit-digitization, zero suppression and data serialization. MuPix7 is the first fully monolithic HV-CMOS pixel sensor that has been tested for the use in high irradiation environments like HL-LHC. We present results from laboratory and test beam measurements of MuPix7 prototypes irradiated with neutrons (up to 5.0 × 1015 neq/cm2) and 24 GeV protons (up to 7.8 × 1015 protons/cm2) and compare the performa…

PhysicsNuclear and High Energy PhysicsPhysics - Instrumentation and DetectorsPixelPhysics::Instrumentation and Detectors010308 nuclear & particles physicsbusiness.industryFOS: Physical sciencesInstrumentation and Detectors (physics.ins-det)01 natural sciencesNoise (electronics)030218 nuclear medicine & medical imagingPhase-locked loop03 medical and health sciences0302 clinical medicineCMOS0103 physical sciencesOptoelectronicsNeutronIrradiationbusinessInstrumentationZero suppressionData transmission
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Silicon detector for a Compton camera in nuclear medical imaging

2002

Electronically collimated gamma ca\-me\-ras based on Com\-pton scattering in silicon pad sensors may improve imaging in nuclear medicine and bio-medical research. The work described here concentrates on the silicon pad detector developed for a prototype Compton camera. The silicon pad sensors are read out using low noise VLSI CMOS chips and novel fast triggering chips. Depending on the application a light weight and dense packaging of sensors and its readout electronics on a hybrid is required. We describe the silicon pad sensor and their readout with the newly designed hybrid. %The silicon detector of a Compton camera %may contain up to $10^5$~analogue channels requiring %a fast and low co…

PhysicsNuclear and High Energy PhysicsSiliconbusiness.industryPhysics::Instrumentation and DetectorsAstrophysics::High Energy Astrophysical PhenomenaDetectorCompton scatteringchemistry.chemical_elementChipCollimated lightData acquisitionNuclear Energy and EngineeringCMOSchemistryElectronic engineeringOptoelectronicsElectrical and Electronic EngineeringImage sensorDetectors and Experimental Techniquesbusiness
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A CMOS-compatible Franz-Keldysh effect plasmonic modulator

2014

We present a design of an optimized CMOS-compatible germanium-on-silicon Franz-Keldysh effect plasmonic modulator. Its length is below 30 μm and the modulator operates at −3V. It features a power consumption as low as 20 fJ/bit.

PhysicsOpticsPower demandbusiness.industryPower consumptionModulationElectro-optic modulatorOptoelectronicsbusinessFranz–Keldysh effectPlasmonCmos compatible11th International Conference on Group IV Photonics (GFP)
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The MuPix high voltage monolithic active pixel sensor for the Mu3e experiment

2015

Mu3e is a novel experiment searching for charged lepton flavor violation in the rare decay μ → eee. In order to reduce background by up to 16 orders of magnitude, decay vertex position, decay time and particle momenta have to be measured precisely. A pixel tracker based on 50 μm thin high voltage monolithic active pixel sensors (HV-MAPS) in a magnetic field will deliver precise vertex and momentum information. Test beam results like an excellent efficiency of >99.5% and a time resolution of better than 16.6 ns obtained with the MuPix HV-MAPS chip developed for the Mu3e pixel tracker are presented.

PhysicsParticle physicsCMOS sensorElectronic detector readout concepts (solid-state)PixelPhysics::Instrumentation and Detectorsbusiness.industryHigh voltageChipElectronic detector readout concepts (solid-state); Particle tracking detectors (solidstate detectors)Magnetic fieldVertex (geometry)OpticsHigh Energy Physics::Experimentddc:610Electric potentialDetectors and Experimental TechniquesParticle tracking detectors (solidstate detectors)ddc:620businessInstrumentationParticle Physics - ExperimentMathematical PhysicsEngineering & allied operationsLepton
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MuPix7 - A fast monolithic HV-CMOS pixel chip for Mu3e

2016

The MuPix7 chip is a monolithic HV-CMOS pixel chip, thinned down to 50 \mu m. It provides continuous self-triggered, non-shuttered readout at rates up to 30 Mhits/chip of 3x3 mm^2 active area and a pixel size of 103x80 \mu m^2. The hit efficiency depends on the chosen working point. Settings with a power consumption of 300 mW/cm^2 allow for a hit efficiency >99.5%. A time resolution of 14.2 ns (Gaussian sigma) is achieved. Latest results from 2016 test beam campaigns are shown.

PhysicsPhysics - Instrumentation and DetectorsPixel010308 nuclear & particles physicsbusiness.industryGaussianFOS: Physical sciencesTime resolutionInstrumentation and Detectors (physics.ins-det)Semiconductor deviceChip01 natural sciencessymbols.namesakeCMOSTest beam0103 physical sciencessymbolsOptoelectronicsddc:610010306 general physicsbusinessInstrumentationGaussian processMathematical Physics
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Overview of HVCMOS pixel sensors

2015

High voltage CMOS (HVCMOS) sensors are presently considered for the use in Mu3e experiment, ATLAS and CLIC. These sensors can be implemented in commercial HVCMOS processes. HVCMOS sensors feature fast charge collection by drift and high radiation tolerance. The sensor element is an n-well/p-type diode. This proceeding-paper gives an overview of HVCMOS projects and the recent results.

PhysicsPixelCompact Linear Colliderbusiness.industryAtlas detectorElectrical engineeringHigh radiationHigh voltageParticle detectorCMOSComputerSystemsOrganization_SPECIAL-PURPOSEANDAPPLICATION-BASEDSYSTEMSbusinessInstrumentationMathematical PhysicsDiodeJournal of Instrumentation
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Development of the wide field imager for Athena

2015

The WFI (Wide Field Imager) instrument is planned to be one of two complementary focal plane cameras on ESA's next X-ray observatory Athena. It combines unprecedented survey power through its large field of view of 40 arcmin x 40 arcmin together with excellent count-rate capability (>= 1 Crab). The energy resolution of the silicon sensor is state-of-the-art in the energy band of interest from 0.2 keV to 15 keV, e.g. the full width at half maximum of a line at 6 keV will be <= 150 eV until the end of the nominal mission phase. This performance is accomplished by using DEPFET active pixel sensors with a pixel size of 130 μm x 130 μm well suited to the on-axis angular resolution of 5 arcsec of…

PhysicsX-ray detectorCMOS sensorHot and Energetic UniversePixelbusiness.industryElectronic Optical and Magnetic MaterialApplied MathematicsX-ray detectorComputer Science Applications1707 Computer Vision and Pattern Recognitionfocal plane cameraCondensed Matter PhysicX-ray astronomyFull width at half maximumCardinal pointOpticsActive pixel sensorObservatoryWFIAngular resolutionAthenaElectrical and Electronic EngineeringbusinessImage resolutionDEPFET
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An FPGA-based design for real-time Super Resolution Reconstruction

2018

Since several decades, the camera spatial resolution is gradually increasing with the CMOS technology evolution. The image sensors provide more and more pixels, generating new constraints for the suitable optics. As an alternative, promising solutions propose Super Resolution (SR) image reconstruction to extend the image size without modifying the sensor architecture. Convincing state-of art studies demonstrate that these methods could even be implemented in real-time. Nevertheless, artifacts can be observed in highly textured areas of the image. In this paper, we propose a Local Adaptive Spatial Super Resolution (LASSR) method to fix this limitation. A real-time texture analysis is include…

PixelComputer sciencebusiness.industryComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION020207 software engineering02 engineering and technologyIterative reconstructionImage (mathematics)CMOSImage texture0202 electrical engineering electronic engineering information engineering020201 artificial intelligence & image processingComputer visionArtificial intelligenceImage sensorField-programmable gate arraybusinessImage resolution[SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processingComputingMilieux_MISCELLANEOUS[SPI.SIGNAL] Engineering Sciences [physics]/Signal and Image processing
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Design of MOS Current Mode Logic Gates – Computing the Limits of Voltage Swing and Bias Current

2005

Minimizing a quality metric for an MCML gate, such as power-delay product or energy-delay product, requires solving a system of nonlinear equations subject to constraints on both bias current and voltage swing. In this paper, we will show that the limits of the swing and the bias current are affected by the constraints on maximum area and maximum delay. Moreover, methods for computing such limits are presented.

Power–delay productEmitter coupled logic circuitsBiasingSwingCMOS integrated circuitsComputer Science::Hardware Architecturemode logicComputer Science::Emerging TechnologiesLogic synthesisParasitic capacitanceControl theoryLogic gateHardware_INTEGRATEDCIRCUITSCurrent-mode logicHardware_LOGICDESIGNVoltageMathematics2005 IEEE International Symposium on Circuits and Systems
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Technical design report for the upgrade of the ALICE inner tracking system

2014

ALICE (A Large Ion Collider Experiment) is studying the physics of strongly interacting matter, and in particular the properties of the Quark–Gluon Plasma (QGP), using proton–proton, proton–nucleus and nucleus–nucleus collisions at the CERN LHC (Large Hadron Collider). The ALICE Collaboration is preparing a major upgrade of the experimental apparatus, planned for installation in the second long LHC shutdown in the years 2018–2019. A key element of the ALICE upgrade is the construction of a new, ultra-light, high- resolution Inner Tracking System (ITS) based on monolithic CMOS pixel detectors. The primary focus of the ITS upgrade is on improving the performance for detection of heavy-flavour…

ROOT-S=2.76 TEV; PP COLLISIONS; DETECTORS; RECONSTRUCTION; ELECTRONICS; SILICON; PHYSICS; MODELPhysics::Instrumentation and DetectorsNuclear TheoryNuclear and High Energy Physics;Tracking (particle physics)01 natural sciences7. Clean energydecaylaw.inventionUpgradeALICElawLHC; ALICE; Inner Tracking SystemNuclear ExperimentGeneralLiterature_REFERENCE(e.g.dictionariesencyclopediasglossaries)ComputingMilieux_MISCELLANEOUSPhysicsLarge Hadron ColliderDetectorSettore FIS/01 - Fisica SperimentaleTracking systemPRIRODNE ZNANOSTI. Fizika.UpgradeLHCParticle physicsNuclear and High Energy PhysicsALICE Inner Tracking SystemROOT-S=2.76 TEV; pp collisions; DETECTORS; RECONSTRUCTION; ELECTRONICS; SILICON; PHYSICS; MODEL; decay[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]Dot pitchPHYSICSELECTRONICS0103 physical sciencesDETECTORSRECONSTRUCTIONCMOS pixel sensors010306 general physicsColliderROOT-S=2.76 TEVSILICONPP COLLISIONSPixel010308 nuclear & particles physicsbusiness.industryALICE experimentInner Tracking SystemTechnical Design ReportNATURAL SCIENCES. Physics.MODELDetector upgradeTechnical Design Report; Upgrade; ALICE Inner Tracking SystemHigh Energy Physics::Experimentbusiness
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