Search results for "Chalcogenide"

Large magnetoresistance at room temperature in the off-stochiometric chalcogenide Cr0.92Te

2006

Abstract We present the electronic and magnetic properties of the transition chalcogenide Cr0.92Te. The compound is the hexagonal counterpart to the hypothetical half-metallic ferromagnet CrTe. The off-stochiometric phase crystallizes in the hexagonal NiAs-type structure P63/mmm. New magnetotransport results show a large magnetoresistance (MR) of 5.5% at room temperature in a magnetic field of 8 T. The remarkable MR-effect can be explained with spin-dependent scattering below the Curie temperature.

'Cold' crystallization in nanostructurized 80GeSe2-20Ga2Se3 glass

2015

International audience; 'Cold' crystallization in 80GeSe 2-20Ga 2 Se 3 chalcogenide glass nanostructurized due to thermal annealing at 380°C for 10, 25, 50, 80, and 100 h are probed with X-ray diffraction, atomic force, and scanning electron microscopy, as well as positron annihilation spectroscopy performed in positron annihilation lifetime and Doppler broadening of annihilation line modes. It is shown that changes in defect-related component in the fit of experimental positron lifetime spectra for nanocrystallized glasses testify in favor of structural fragmentation of larger free-volume entities into smaller ones. Nanocrystallites of Ga 2 Se 3 and/or GeGa 4 Se 8 phases and prevalent GeSe…

Cover Picture: Reversible Self-Assembly of Metal Chalcogenide/Metal Oxide Nanostructures Based on Pearson Hardness (Angew. Chem. Int. Ed. 41/2010)

2010

Fast-Response Single-Nanowire Photodetector Based on ZnO/WS 2 Core/Shell Heterostructures

2018

This work was supported by the Latvian National Research Program IMIS2 and ISSP project for Students and Young Researchers Nr. SJZ/2016/6. S.P. is grateful to the ERA.Net RUS Plus WATERSPLIT project no. 237 for the financial support. S.V. is grateful for partial support by the Estonian Science Foundation grant PUT1689.

Raman Spectra of ZrS2 and ZrSe2 from Bulk to Atomically Thin Layers

2016

In the race towards two-dimensional electronic and optoelectronic devices, semiconducting transition metal dichalcogenides (TMDCs) from group VIB have been intensively studied in recent years due to the indirect to direct band-gap transition from bulk to the monolayer. However, new materials still need to be explored. For example, semiconducting TMDCs from group IVB have been predicted to have larger mobilities than their counterparts from group VIB in the monolayer limit. In this work we report the mechanical exfoliation of ZrX2 (X = S, Se) from bulk down to the monolayer and we study the dimensionality dependence of the Raman spectra in ambient conditions. We observe Raman signal from bul…

Mismatch strain versus dangling bonds: formation of "coin-roll nanowires" by stacking nanosheets.

2010

Low loss microstructured chalcogenide fibers for large non linear effects at 1995 nm

2010

International audience; Microstructured optical fibers (MOFs) are traditionally prepared using the stack and draw technique. In order to avoid the interfaces problems observed in chalcogenide glasses, we have developed a new casting method to prepare the chalcogenide preform. This method allows to reach optical losses around 0.4 dB/m at 1.55 µm and less than 0.05 dB/m in the mid IR. Various As(38)Se(62) chalcogenide microstructured fibers have been prepared in order to combine large non linear index of these glasses with the mode control offered by MOF structures. Small core fibers have been drawn to enhance the non linearities. In one of these, three Stokes order have been generated by Ram…

Chalcogenide Microstructured Fibers for Infrared Systems, Elaboration, Modelization, and Characterization

2009

special issue " Fiber Optic Research in France " (Part III of III); International audience; Chalcogenide fibers present numerous possible applications in the IR field. For many applications, single mode fibers must be obtained. An original way is the realization of microstructured optical fibers (MOFs) with solid core. These fibers present a broad range of optical properties thanks to the high number of freedom degrees of their geometrical structure. In this context, we have developed MOFs for near and mid IR transmission with different geometries and properties such as multimode or endless single-mode operation, small or large mode area fibers. We have also investigated numerically the mai…

Mid-infrared 2000-nm bandwidth supercontinuum generation in suspended-core microstructured Sulfide and Tellurite optical fibers

2012

International audience; In this work, we report the experimental observation of supercontinua generation in two kinds of suspended-core microstructured soft-glass optical fibers. Low loss, highly nonlinear, tellurite and As2S3 chalcogenide fibers have been fabricated and pumped close to their zero-dispersion wavelength in the femtosecond regime by means of an optical parametric oscillator pumped by a Ti:Sapphire laser. When coupled into the fibers, the femtosecond pulses result in 2000-nm bandwidth supercontinua reaching the Mid-Infrared region and extending from 750 nm to 2.8 mu m in tellurite fibers and 1 mu m to 3.2 mu m in chalcogenide fibers, respectively.

Ternary and quaternary Ge-S-Se-Sb-Te amorphous chalcogenide thin films for mid-infrared applications

2017

International audience; Chalcogenide materials exhibit a unique portfolio of properties which has led to their wide use for nonvolatile memory applications such as optical storage (CD-RW and DVD-RAM), Conductive Bridging Random Access Memory or Phase Change Random Access Memory (PCRAM). More recently, thanks to huge electronic nonlinearities under electrical field application, chalcogenide glasses are considered as most promising materials to be used as Ovonic Threshold Switching (OTS) selectors [1]. Besides, thanks to high transparency window in the infrared range and large optical nonlinearities [2], chalcogenide alloys offer the opportunity of development of innovative mid-infrared (MIR)…