Search results for "Composite"
showing 10 items of 4584 documents
Study on Structural, Mechanical, and Optical Properties of Al2O3–TiO2 Nanolaminates Prepared by Atomic Layer Deposition
2015
Structural, optical, and mechanical properties of Al2O3/TiO2 nanolaminates fabricated by atomic layer deposition (ALD) were investigated. We performed transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray reflectivity (XRR), energy dispersive X-ray spectroscopy (EDX), ellipsometry, UV–vis spectroscopy, photoluminescence (PL) spectroscopy, and nanointendation to characterize the Al2O3/TiO2 nanolaminates. The main structural, optical, and mechanical parameters of Al2O3/TiO2 nanolaminates (thickness, grain size, refractive index, extinction coefficient, band gap, hardness, and Young’s module) were calculated. It was established that with decreasing of the layer thickness, the …
Gamma irradiation of graphene quantum dots with ethylenediamine: Antioxidant for ion sensing
2020
Due to the low consumption of chemicals, the absence of toxic residual side products, the procedure simplicity and time-saving aspects, gamma irradiation offers advantages over the classical chemical protocols. We successfully employed gamma irradiation in order to introduce N-atoms in Graphene Quantum Dots (GQDs). By irradiating GQDs water dispersions in the presence of isopropyl alcohol and ethylenediamine, at doses of 25, 50 and 200 kGy, we attached amino groups onto GQDs in a single synthetic step. At the same time, a chemical reduction is achieved, too. Selected conditions induced incorporation of N-atoms within GDQs atomic lattice (around 3 at%), at all applied doses. Additionally, th…
Sub-band-gap-excited luminescence of localized states in SiO2–Si and SiO2–Al glasses
2010
Abstract Silica glass samples doped with extra silicon (SiO 2 –Si: artificial oxygen deficiency) and with aluminum (SiO 2 –Al: Al-doped without accompanying alkali ions) were studied. The luminescence properties of these two samples are compared in the range of temperature 15–290 K under excitation of ArF excimer laser (193 nm). In both samples the luminescence of oxygen deficient centers (ODCs) is detected, i.e., emission bands in the blue at 440 nm and the UV at 280 nm. Cooling of the both samples led to strong increases of luminescence intensity down to 80 K with much smaller increases for still lower temperatures. At 290 K in SiO 2 –Si a luminescence similar to that of twofold-coordinat…
Impact of fluorine admixture, hydrogen loading, and exposure to ArF excimer laser on photoluminescence of bismuth defects in amorphous silica
2013
Abstract Photoluminescence (PL) excited by ArF (193 nm), KrF (248 nm) and N 2 (337 nm) pulsed lasers is studied in bismuth doped unfused silicon dioxide synthesized on silica substrates by surface-plasma chemical vapor deposition (SPCVD). Additive free and fluorinated (F content ~ 0.4 wt.%) amorphous silica are examined as host materials for bismuth. Three typical PL bands peaking at wavelengths of 650 nm (orange), 800 nm and 1400 nm (near infrared, NIR) were observed. It is found that fluorine additive weakly affects PL detail of as deposited samples. However, hydrogen loading completely deactivates NIR PL in the case of fluorine free sample, but only slightly suppresses the NIR band in fl…
Temperature dependence of O2 singlet photoluminescence in silica nanoparticles
2013
Abstract The near infrared singlet emission and photoluminescence lifetime of O 2 molecules embedded in silica nanoparticles are studied from room temperature down to 10 K. The area of the photoluminescence band under infrared excitation decreases for temperature above 100 K and the lifetime is shortened. These observations provide evidence of a thermally activated relaxation channel with activation energy of about 40 meV. This relaxation mechanism adds to the already known temperature independent electronic-to-vibrational coupling involving high energy vibrational modes of the host matrix or its impurities. The thermally activated process is suggested to consist in the breakage of the O 2 …
α- and β-AgVO3 polymorphs as photoluminescent materials: an example of temperature-driven synthesis
2018
Abstract Controlling the synthesis of a given polymorph of an inorganic material is a further step in the design of property and function. In this letter, we report for the first time a simple procedure to effectively control the reversible transformation between the crystalline polymorphs α-AgVO3 and β-AgVO3. Photoluminescence emission (PL) performance is analyzed; at low temperatures (up to 35 °C) when α-AgVO3 is formed the PL emission is red, while at temperatures larger than 45 °C when β-AgVO3 is obtained the color of emission PL emission goes from green to blue. The findings highlight the ability of temperature to dramatically alter the nature of phase transformation at the atomic leve…
Intra-center and recombination luminescence of bismuth defects in fused and unfused amorphous silica fabricated by SPCVD
2013
Abstract Photoluminescence (PL) of bismuth doped silicon dioxide excited by UV excimer lasers (ArF — 193 nm, KrF — 248 nm) and a green light laser diode (532 nm) is studied in a wide spectral band at temperatures ranging from 12 to 750 K. Two types of samples are investigated: unfused, 100 μm in thickness amorphous layer immediately deposited on the inner surface of silica substrate tube, and the same material after profusion resulted from tube collapsing to a rod by external heating. PL bands centered at 620–650 nm, 820 nm and 1400 nm wavelengths are observed in both fused and unfused samples. Under excitation by the green laser diode decay time constants for 650 nm (orange) and 1400 nm (N…
Structure, nanohardness and photoluminescence of ZnO ceramics based on nanopowders
2015
ZnO ceramics obtained from grained powders with different grain size by hot pressing and ceramics from tetrapods nanopowders obtained by press-less sintering have been investigated under identical conditions. Ceramics obtained by hot pressing were optically transparent but were composed of large inhomogeneous grains (d = 8–35 μm) exhibiting a substructure. Decreased values of elastic modulus within a grain and a wide defect-associated ('green') photoluminescence (PL) band at 2.2–2.8 eV in conjunction with a weak excitonic band indicate a high concentration of residual point defects in hot pressed ZnO ceramics. Utilization of more small-grained powders contributes to the formation of more un…
Study of the germanium luminescence in silica: from non-controlled impurity to germano-silicate core of telecommunication fiber preforms
2003
Abstract We have studed luminescence properties of doped silica with different concentrations of germanium. The basic luminescence parameters such as spectral dependencies, decay kinetics and polarization at different temperatures were measured. Three spectral ranges 3.5–5.5 eV(I), 5.5–7 eV(II), 7–8 eV(III) in the optical transparency range of silica could be chosen from these data. Range I possesses a weak variation of basic parameters of luminescence of the germanium related oxygen deficient center with the change of luminescence center concentration from extremely low in pure silica to the germano-silica core of optical telecommunication fiber preforms. The temperature dependence of lumi…
Luminescence and absorption spectroscopy of Sn-related impurity centers in silica
2006
We report an experimental study on the absorption and luminescence spectra of oxygen deficient point defects in Sn-doped silica. The absorption band at 4.9 eV (B2β band) and the two related photoluminescence bands at ∼4.2 eV (singlet-singlet emission, S1 → S0) and at ∼3.2 eV (triplet-singlet emission, T1 → S0), linked by a thermally activated T1 → S1 inter-system crossing process (ISC), are studied as a function of temperature from 300 to 20 K. This approach allows us to investigate the dynamics properties of the matrix in the surroundings of the point defects and the effects of local disorder on the two relaxation processes from S1: the radiative channel to S0 and the ISC process to T1. We…