Search results for "Condensed Matter - Strongly Correlated Electrons"

showing 10 items of 322 documents

Nonequilibrium Green's function approach to strongly correlated few-electron quantum dots

2009

The effect of electron-electron scattering on the equilibrium properties of few-electron quantum dots is investigated by means of nonequilibrium Green's function theory. The ground and equilibrium states are self-consistently computed from the Matsubara (imaginary time) Green's function for the spatially inhomogeneous quantum dot system whose constituent charge carriers are treated as spin-polarized. To include correlations, the Dyson equation is solved, starting from a Hartree-Fock reference state, within a conserving (second-order) self-energy approximation where direct and exchange contributions to the electron-electron interaction are included on the same footing. We present results for…

KADANOFF-BAYM EQUATIONSFOS: Physical sciencesquantum dotsElectronelectron-electron interactionsSEMICONDUCTORSGreen's function methodsATOMSCondensed Matter - Strongly Correlated Electronssymbols.namesakeMOLECULESSYSTEMSQuantum mechanicsMesoscale and Nanoscale Physics (cond-mat.mes-hall)Quantum statistical mechanicsKINETICSPhysicsstrongly correlated electron systemstotal energyCondensed Matter - Mesoscale and Nanoscale PhysicsStrongly Correlated Electrons (cond-mat.str-el)Condensed matter physicselectron-electron scatteringHOLE PLASMASCondensed Matter Physicsground statesImaginary timecarrier densityElectronic Optical and Magnetic MaterialsDistribution functionINITIAL CORRELATIONSQuantum dotGreen's functionSPECTRAL FUNCTIONSsymbolsStrongly correlated materialCRYSTALLIZATIONFermi gasPhysical Review. B: Condensed Matter and Materials Physics
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A magnetic skyrmion as a non-linear resistive element - a potential building block for reservoir computing

2017

Inspired by the human brain, there is a strong effort to find alternative models of information processing capable of imitating the high energy efficiency of neuromorphic information processing. One possible realization of cognitive computing are reservoir computing networks. These networks are built out of non-linear resistive elements which are recursively connected. We propose that a skyrmion network embedded in frustrated magnetic films may provide a suitable physical implementation for reservoir computing applications. The significant key ingredient of such a network is a two-terminal device with non-linear voltage characteristics originating from single-layer magnetoresistive effects,…

MagnetoresistanceGeneral Physics and AstronomyFOS: Physical sciences02 engineering and technologyMagnetic skyrmionTopology01 natural sciencesCondensed Matter - Strongly Correlated Electrons0103 physical sciences010306 general physicsBlock (data storage)PhysicsResistive touchscreenStrongly Correlated Electrons (cond-mat.str-el)SkyrmionReservoir computingDisordered Systems and Neural Networks (cond-mat.dis-nn)Condensed Matter - Disordered Systems and Neural NetworksPhysik (inkl. Astronomie)021001 nanoscience & nanotechnologyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter - Other Condensed MatterNeuromorphic engineering0210 nano-technologyRealization (systems)Other Condensed Matter (cond-mat.other)
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Spin-orbital polarization of Majorana edge states in oxides nanowires

2020

We investigate a paradigmatic case of topological superconductivity in a one-dimensional nanowire with $d-$orbitals and a strong interplay of spin-orbital degrees of freedom due to the competition of orbital Rashba interaction, atomic spin-orbit coupling, and structural distortions. We demonstrate that the resulting electronic structure exhibits an orbital dependent magnetic anisotropy which affects the topological phase diagram and the character of the Majorana bound states (MBSs). The inspection of the electronic component of the MBSs reveals that the spin-orbital polarization generally occurs along the direction of the applied Zeeeman magnetic field, and transverse to the magnetic and or…

Majorana polarization oxides superconductivityFOS: Physical sciences02 engineering and technology01 natural sciencesSuperconductivity (cond-mat.supr-con)Condensed Matter - Strongly Correlated Electronssymbols.namesake0103 physical sciencesBound stateMesoscale and Nanoscale Physics (cond-mat.mes-hall)010306 general physicsPhysicsZeeman effectCondensed Matter - Mesoscale and Nanoscale PhysicsCondensed matter physicsStrongly Correlated Electrons (cond-mat.str-el)Condensed Matter - Superconductivitysuperconductivity021001 nanoscience & nanotechnologyPolarization (waves)Magnetic fieldMagnetic anisotropyMAJORANAoxidesDensity of statessymbolsAstrophysics::Earth and Planetary Astrophysics0210 nano-technologyMajorana polarizationExcitation
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Covalent bonding and the nature of band gaps in some half-Heusler compounds

2005

Half-Heusler compounds \textit{XYZ}, also called semi-Heusler compounds, crystallize in the MgAgAs structure, in the space group $F\bar43m$. We report a systematic examination of band gaps and the nature (covalent or ionic) of bonding in semiconducting 8- and 18- electron half-Heusler compounds through first-principles density functional calculations. We find the most appropriate description of these compounds from the viewpoint of electronic structures is one of a \textit{YZ} zinc blende lattice stuffed by the \textit{X} ion. Simple valence rules are obeyed for bonding in the 8-electron compound. For example, LiMgN can be written Li$^+$ + (MgN)$^-$, and (MgN)$^-$, which is isoelectronic wi…

Materials scienceAcoustics and UltrasonicsBand gapFOS: Physical sciencesIonic bonding02 engineering and technology01 natural sciencesIonElectronegativityCondensed Matter::Materials ScienceCondensed Matter - Strongly Correlated ElectronsLattice (order)0103 physical sciencesIsostructural010306 general physicsCondensed Matter - Materials ScienceValence (chemistry)Strongly Correlated Electrons (cond-mat.str-el)Materials Science (cond-mat.mtrl-sci)Fermi energy021001 nanoscience & nanotechnologyCondensed Matter Physics3. Good healthSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCrystallographyCondensed Matter::Strongly Correlated Electrons0210 nano-technology
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Magnetoresistance and Phase Diagram of Thin-Film UNi2Al3

2011

We study the dc resistivity of UNi2Al3 thin films as a function of temperature and magnetic field. We focus on the temperature range around the antiferromagnetic transition (TN \approx 4 K in zero applied field). From a clear signature of TN in the dc resistance along the crystallographic a-direction, we extract the shape of the magnetic phase diagram. Here we find quantitative differences in comparison to previous studies on bulk crystals.

Materials scienceCondensed matter physicsField (physics)MagnetoresistanceStrongly Correlated Electrons (cond-mat.str-el)Dc resistivityGeneral Physics and AstronomyFOS: Physical sciencesAtmospheric temperature rangeMagnetic fieldCondensed Matter - Strongly Correlated ElectronsAntiferromagnetismThin filmPhase diagram
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Two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ inteface with a potential barrier

2015

We present a tight binding description of electronic properties of the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO). The description assumes LAO and STO perovskites as sets of atomic layers in the $x$-$y$ plane, which are weakly coupled by an interlayer hopping term along the $z$ axis. The interface is described by an additional potential, $U_0$, which simulates a planar defect. Physically, the interfacial potential can result from either a mechanical stress at the interface or other structural imperfections. We show that depending on the potential strength, charge carriers (electrons or holes) may form an energy band which is localized at the interface and is within the band gaps …

Materials scienceCondensed matter physicsStrongly Correlated Electrons (cond-mat.str-el)Band gapGeneral Physics and AstronomyFOS: Physical sciences02 engineering and technologyElectronConductivity021001 nanoscience & nanotechnologyCritical value01 natural sciencesCondensed Matter - Strongly Correlated ElectronsTight binding0103 physical sciencesRectangular potential barrierCharge carrierPhysical and Theoretical Chemistry010306 general physics0210 nano-technologyElectronic band structure
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Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling

2018

Magnetic insulators are a key resource for next-generation spintronic and topological devices. The family of layered metal halides promises varied magnetic states, including ultrathin insulating multiferroics, spin liquids, and ferromagnets, but device-oriented characterization methods are needed to unlock their potential. Here, we report tunneling through the layered magnetic insulator CrI₃ as a function of temperature and applied magnetic field.We electrically detect the magnetic ground state and interlayer coupling and observe a fieldinducedmetamagnetic transition.The metamagnetic transition results in magnetoresistances of 95, 300, and 550% for bilayer, trilayer, and tetralayer CrI₃ bar…

Materials scienceFísica de la Materia CondensadaMagnetismFOS: Physical sciencesMagnetic insulators02 engineering and technology01 natural sciencessymbols.namesakeCondensed Matter::Materials ScienceCondensed Matter - Strongly Correlated ElectronsMesoscale and Nanoscale Physics (cond-mat.mes-hall)0103 physical sciencesMultiferroicsElectron tunneling010306 general physicsQuantum tunnellingCondensed Matter - Materials ScienceMultidisciplinaryStrongly Correlated Electrons (cond-mat.str-el)SpintronicsCondensed matter physicsCondensed Matter - Mesoscale and Nanoscale PhysicsMagnonMaterials Science (cond-mat.mtrl-sci)Crystalline insulators021001 nanoscience & nanotechnologyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectMagnetic fieldFerromagnetismsymbolsCondensed Matter::Strongly Correlated Electronsvan der Waals force0210 nano-technology
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The effect of interface roughness on exchange bias in La0.7Sr0.3MnO3 - BiFeO3 heterostructures

2016

We characterized the interfaces of heterostructures with different stack sequences of La0.7Sr0.3MnO3/BiFeO3 (LSMO/BFO) and BFO/LSMO using TEM revealing sharp and rough interfaces, respectively. Magnetometry and magnetoresistance measurements do not show a detectable exchange bias coupling for the multistack with sharp interface. Instead, the heterostructures with rough and chemically intermixed interfaces exhibit a sizable exchange bias coupling. Furthermore, we find a temperature-dependent irreversible magnetization behavior and an exponential decay of coercive and exchange bias field with temperature suggesting a possible spin-glass-like state at the interface of both stacks.

Materials sciencePhysics and Astronomy (miscellaneous)Condensed matter physicsMagnetoresistanceStrongly Correlated Electrons (cond-mat.str-el)FOS: Physical sciencesHeterojunction02 engineering and technologyCoercivity021001 nanoscience & nanotechnology01 natural sciencesMagnetizationCondensed Matter - Strongly Correlated ElectronsCondensed Matter::Materials ScienceExchange biasFerromagnetism0103 physical sciencesMultiferroicsCondensed Matter::Strongly Correlated ElectronsExponential decay010306 general physics0210 nano-technology
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Emergence of a metallic metastable phase induced by electrical current in Ca2RuO4

2019

A comprehensive study of the behavior of the Mott insulator ${\mathrm{Ca}}_{2}{\mathrm{RuO}}_{4}$ under electrical current drive is performed by combining two experimental probes: the macroscopic electrical transport and the microscopic x-ray diffraction. The resistivity, $\ensuremath{\rho}$, versus electric current density, $J$, and temperature, $T,\ensuremath{\rho}(J,T)$, resistivity map is drawn. In particular, the metastable state, induced between the insulating and the metallic thermodynamic states by current biasing ${\mathrm{Ca}}_{2}{\mathrm{RuO}}_{4}$ single crystals, is investigated. Such an analysis, combined with the study of the resulting ${\mathrm{RuO}}_{6}$ octahedra energy le…

Materials scienceStrongly Correlated Electrons (cond-mat.str-el)Condensed matter physicsMott insulatorFOS: Physical sciences02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencescrystalCrystalCondensed Matter - Strongly Correlated ElectronsTetragonal crystal systemMott; crystalElectrical resistivity and conductivityCondensed Matter::SuperconductivityPhase (matter)Metastability0103 physical sciencesCondensed Matter::Strongly Correlated ElectronsOrthorhombic crystal system010306 general physics0210 nano-technologyMottEnergy (signal processing)Physical Review B
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Electron-electron interactions in artificial graphene

2012

Recent advances in the creation and modulation of graphenelike systems are introducing a science of ``designer Dirac materials''. In its original definition, artificial graphene is a man-made nanostructure that consists of identical potential wells (quantum dots) arranged in an adjustable honeycomb lattice in the two-dimensional electron gas. As our ability to control the quality of artificial graphene samples improves, so grows the need for an accurate theory of its electronic properties, including the effects of electron-electron interactions. Here we determine those effects on the band structure and on the emergence of Dirac points.

NanostructureMaterials scienceCondensed Matter - Mesoscale and Nanoscale PhysicsStrongly Correlated Electrons (cond-mat.str-el)Condensed matter physicsGrapheneFOS: Physical sciencesGeneral Physics and AstronomyElectronlaw.inventionCondensed Matter - Strongly Correlated ElectronsQuantum dotlawLattice (order)Mesoscale and Nanoscale Physics (cond-mat.mes-hall)artificial grapheneFermi gasElectronic band structureQuantum well
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