Search results for "Condensed Matter::Mesoscopic Systems and Quantum Hall Effect"
showing 10 items of 562 documents
Spin Hall magnetoresistance in the non-collinear ferrimagnet GdIG close to the compensation temperature
2017
We investigate the spin Hall magnetoresistance (SMR) in a gadolinium iron garnet (GdIG)/platinum (Pt) heterostructure by angular dependent magnetoresistance measurements. The magnetic structure of the ferromagnetic insulator GdIG is non-collinear near the compensation temperature, while it is collinear far from the compensation temperature. In the collinear regime, the SMR signal in GdIG is consistent with the usual [Formula: see text] relation well established in the collinear magnet yttrium iron garnet, with [Formula: see text] the angle between magnetization and spin Hall spin polarization direction. In the non-collinear regime, both an SMR signal with inverted sign and a more complex an…
Wave-vector analysis of plasmon-assisted distributed nonlinear photoluminescence along Au nanowires
2020
We report a quantitative analysis of the wavevector diagram emitted by nonlinear photoluminescence generated by a tightly focused pulsed laser beam and distributed along Au nanowire via the mediation of surface plasmon polaritions. The nonlinear photoluminescence is locally excited at key locations along the nanowire in order to understand the different contributions constituting the emission pattern measured in a conjugate Fourier plane of the microscope. Polarization-resolved measurements reveal that the nanowire preferentially emits nonlinear photoluminescence polarized transverse to the long axis at close to the detection limit wavevectors with a small azimuthal spread in comparison to …
Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure at cryogenic temperatures
2004
In the present work we employ a direct extraction procedure to determine small signal equivalent circuit of microwave GaAs FETs by means of scattering (S-) parameter measurements down to cryogenic temperatures. The direct extraction procedure was tested on packaged AlGaAs/InGaAs HEMTs and good agreement between the simulated and measured S-parameters was obtained at different bias and temperature conditions. We employed a properly designed cryogenic set-up operating in our laboratory that allows to perform DC and RF characterization down to 30 K.
Parameters influencing the stiffness of composites reinforced by carbon nanotubes – A numerical–analytical approach
2014
Abstract Due to their high stiffness and strength, as well as their electrical conductivity, carbon nanotubes are under intense investigation as fillers in polymer matrix composites. The nature of the carbon nanotube/polymer bonding and the curvature of the carbon nanotubes may strongly reduce the reinforcing effect of the carbon nanotubes when added to a matrix to create composites. Here the effects of carbon nanotube waviness and the interaction with the matrix on the stiffness of the composite are investigated. Using a mixed numerical–analytical model, a parametric study of the waviness and volume fraction influence of CNTs on the elastic behavior of the nanocomposite is presented. The m…
Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy
2010
Evolution of the size, shape and composition of self-assembled InAs/InP quantum wires through the Stranski–Krastanov transition has been determined by aberration-corrected Z-contrast imaging. High resolution compositional maps of the wires in the initial, intermediate and final formation stages are presented. (001) is the main facet at their very initial stage of formation, which is gradually reduced in favour of {114} or {118}, ending with the formation of mature quantum wires with {114} facets. Significant changes in wire dimensions are measured when varying slightly the amount of InAs deposited. These results are used as input parameters to build three-dimensional models that allow calcu…
Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts
2011
We performed a detailed investigation of the structural and optical properties of multi-layers of InP/GaAs quantum dots, which present a type II interface arrangement. Transmission electronic microscopy analysis has revealed relatively large dots that coalesce forming so-called quantum posts when the GaAs layer between the InP layers is thin. We observed that the structural properties and morphology affect the resulting radiative lifetime of the carriers in our systems. The carrier lifetimes are relatively long, as expected for type II systems, as compared to those observed for single layer InP/GaAs quantum dots. The interface intermixing effect has been pointed out as a limiting factor for…
Subwavelength mapping of surface photonic states
2003
We show that the spectral tailoring of optical local density of states (LDOS) may be achieved by lithographically designed nanostructures and that the subwavelength mapping of the spectral variation of the optical LDOS is feasible by varying the driving frequency of the effective dipole used in an illumination mode scanning near-field optical microscope.
Advances in solution-processed near-infrared light-emitting diodes
2021
A summary of recent advances in the near-infrared light-emitting diodes that are fabricated by solution-processed means, with coverage of devices based on organic semiconductors, halide perovskites and colloidal quantum dots.
Anisotropic optical response of GaN and AlN nanowires.
2012
We present a theoretical study of the electronic structure and optical properties of free-standing GaN and AlN nanowires. We have implemented the empirical tight-binding method, with an orbital basis sp(3), that includes the spin-orbit interaction. The passivation of the dangling bonds at the free surfaces is also studied, together with the effects on the electronic structure of the nanowire. For both GaN and AlN nanowires, we have found a remarkable anisotropy of the optical absorption when the light-polarization changes, showing in the case of GaN a dependence on the nanowire size.
Raman studies of isotope effects in Si and GaAs
1999
Abstract We have measured by Raman scattering changes of the optic phonon energy and line width in Si and GaAs with isotopic composition. The phonon energies of isotopically pure samples show the expected dependence on the average atomic mass in Si and the reduced mass in GaAs, respectively, as well as small anharmonic contributions. In isotopically disordered samples we find frequency shifts of 1.15(20) cm−1 for 28Si0.530Si0.5 and 0.31(20) cm−1 for the TO phonon of natGaAs, induced by mass disorder which also contributes to the line broadening. We give theoretical estimates of these effects.