Search results for "Conduct"

Phase segregation in Mg$_{x}$Zn$_{1-x}$O probed by optical absorption and photoluminescence at high pressure

2017

The appearance of segregated wurtzite Mg$_x$Zn$_{1-x}$O with low Mg content in thin films with $x>0.3$ affected by phase separation, cannot be reliably probed with crystallographic techniques owing to its embedded nanocrystalline configuration. Here we show a high-pressure approach which exploits the distinctive behaviors under pressure of wurtzite Mg$_x$Zn$_{1-x}$O thin films with different Mg contents to unveil phase segregation for $x>0.3$. By using ambient conditions photoluminescence (PL), and with optical absorption and PL under high pressure for $x=0.3$ we show that the appearance of a segregated wurtzite phase with a magnesium content of x $\sim$ 0.1 is inherent to the wurtzit…

Preparation, Characterisation and Dielectric Properties of YBa2Cu3O7-δ/ Insulator-Heterostructures

1996

YBa 2 Cu 3 O 7-δ /insulator/Au-heterostructures on SrTiO 3 or LaAlO 3 substrates were prepared to study the properties of the materials SrTiO 3 , BaTiO 3 and Ceo 2 . X-ray diffraction measurements in Bragg-Brentano geometry show c-axis-oriented growth for the superconductor and the insulators SrTiO 3 and CeO 2 . Typical values for the rocking curve width of the different insulating films are between 0.4° and 0.8°. The highest breakdown fields are measured for the insulator SrTiO 3 with +37.5 kV/mm and -8.8 kV/mm. The permittivity for CeO 2 is independent of applied field and only weakly temperature dependent. This is in contrast to the perovskite type insulators, where the permittivity depe…

Photo-electrical and transport properties of hydrothermal ZnO

2016

We performed the studies of optical, photoelectric, and transport properties of a hydrothermal bulk n-type ZnO crystal by using the contactless optical techniques: photoluminescence, light-induced transient grating, and differential reflectivity. Optical studies revealed bound exciton and defect-related transitions between the donor states (at ∼60 meV and ∼240 meV below the conduction band) and the deep acceptor states (at 0.52 eV above the valence band). The acceptor state was ascribed to VZn, and its thermal activation energy of 0.43 eV was determined. A low value of carrier diffusion coefficient (∼0.1 cm2/s) at low excitations and temperatures up to 800 K was attributed to impact the rec…

Partial discharges at different voltage waveshapes: Comparison between two different acquisition systems

2018

In modern HV apparatuses the wide use of electronic converters, increase the stress on the involved insulation systems and thus affect the reliability of the whole power grid. Additionally, such non-sinusoidal voltage shapes contain high gradient flanks that create problems in the detection of partial discharge (PD) activity. The aim of this paper is to discuss the methodology on how to suitably approach PD detection in insulation systems exposed to various voltage waveshapes in general by comparing two different measuring systems. The first one, equipped with a resonant PD decoupler, designed specifically for detection at typical power electronic waveshapes and the other one, based on an a…

Topological insulator nanoribbon Josephson junctions: Evidence for size effects in transport properties

2020

We have used Bi$_2$Se$_3$ nanoribbons, grown by catalyst-free Physical Vapor Deposition to fabricate high quality Josephson junctions with Al superconducting electrodes. In our devices we observe a pronounced reduction of the Josephson critical current density $J_c$ by reducing the width of the junction, which in our case corresponds to the width of the nanoribbon. Because the topological surface states extend over the entire circumference of the nanoribbon, the superconducting transport associated to them is carried by modes on both the top and bottom surfaces of the nanoribbon. We show that the $J_c$ reduction as a function of the nanoribbons width can be accounted for by assuming that on…

SIC based solid state protections switches for space applications

2017

Development and technology maturation of Silicon Carbide (SiC) power transistors over the last 15 years has motivated its study in aerospace systems. When compared with Si devices, superior voltage blocking capacity and the capability of operation at higher temperatures, give important advantages in space power electronics applications, similar to what happens in terrestrial electronics. This paper discusses the use of SiC power transistors for Solid State Power Switches especially addressed to the space segment. Two applications will be covered, the first is the Solid State Shunt Switch, widely used in high power Direct Energy Transfer (DET) photovoltaic power regulators and the second is …

Electrical transport in lead-free (Na0.5Bi0.5)1–xSrxTiO3 ceramics (x = 0, 0.01 and 0.02)

2017

Lead-free (Na0.5Bi0.5)1xSrxTiO3 (x = 0, 0.01 and 0.02) ceramics were manufactured through a solid-state mixed oxide method and their ac (σac) and dc (σdc) electric conductivity were studied. It is ...

Space charge accumulation in undersea HVDC cables as function of heat exchange conditions at the boundaries – water-air interface

2020

Transmission lines with undersea HVDC cables are an interesting technological solution for the supply of electrical energy to islands. The accumulation of space charge inside the dielectric layer of a HVDC cable is one of the most important element to consider in its design and during operation. The formation of space charge is due to various factors including the high dependence on the temperature of the electrical conductivity of the insulation and the establishment of a thermal gradient under load conditions. This research is focused on the space charge accumulation phenomenon around a section of a HVDC cable half dipped in water and half in air. Due to the high difference in thermal con…

2018

CrN thin films with an N/Cr ratio of 95% were deposited by reactive magnetron sputtering onto (0 0 0 1) sapphire substrates. X-ray diffraction and pole figure texture analysis show CrN (1 1 1) epitaxial growth in a twin domain fashion. By changing the nitrogen versus argon gas flow mixture and the deposition temperature, thin films with different surface morphologies ranging from grainy rough textures to flat and smooth films were prepared. These parameters can also affect the CrN x system, with the film compound changing between semiconducting CrN and metallic Cr2N through the regulation of the nitrogen content of the gas flow and the deposition temperature at a constant deposition pressur…

Flash annealing influence on structural and electrical properties of TiO2/TiO/Ti periodic multilayers

2014

Abstract Multilayered structures with a 40 nm period composed of titanium and two different titanium oxides, TiO and TiO 2 , were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. These multilayers were sputtered onto Al 2 O 3 sapphire to avoid substrate compound diffusion during flash annealing (ranging from 350 °C to 550 °C). Structure and composition of these periodic TiO 2 /TiO/Ti stacks were investigated by X-ray diffraction, X-ray photoemission spectroscopy and transmission electronic microscopy techniques. Two crystalline phases α-Ti and fcc-TiO were identified in the metallic-rich sub-layers whereas the oxygen-rich ones were composed of a mixture…