6533b86efe1ef96bd12cb5fd
RESEARCH PRODUCT
Phase segregation in Mg$_{x}$Zn$_{1-x}$O probed by optical absorption and photoluminescence at high pressure
Vicente Muñoz-sanjoseV. Marín-borrásAlfredo SeguraJavier Ruiz-fuertessubject
010302 applied physicsCondensed Matter - Materials ScienceMaterials sciencePhotoluminescenceBand gapAnalytical chemistryWide-bandgap semiconductorGeneral Physics and AstronomyMineralogyMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciences02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesNanocrystalline materialPhase (matter)0103 physical sciencesAbsorption (chemistry)Thin film0210 nano-technologyWurtzite crystal structuredescription
The appearance of segregated wurtzite Mg$_x$Zn$_{1-x}$O with low Mg content in thin films with $x>0.3$ affected by phase separation, cannot be reliably probed with crystallographic techniques owing to its embedded nanocrystalline configuration. Here we show a high-pressure approach which exploits the distinctive behaviors under pressure of wurtzite Mg$_x$Zn$_{1-x}$O thin films with different Mg contents to unveil phase segregation for $x>0.3$. By using ambient conditions photoluminescence (PL), and with optical absorption and PL under high pressure for $x=0.3$ we show that the appearance of a segregated wurtzite phase with a magnesium content of x $\sim$ 0.1 is inherent to the wurtzite and rock-salt phase separation. We also show that the presence of segregated wurtzite phase in oversaturated thin films phase is responsible for the low-energy absorption tail observed above $x=0.3$ in our Mg$_x$Zn$_{1-x}$O thin films. Our study has also allowed us to extend the concentration dependence of the pressure coefficient of the band gap from the previous limit of $x$ = 0.13 to $x \approx 0.3$ obtaining d$E_g$/d$P$ = 29 meV/GPa for wurtzite with $x \approx 0.3$ and 25 meV/GPa for the segregated $x\approx 0.09$ wurtzite phase.
year | journal | country | edition | language |
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2017-09-14 |