Search results for "Conductor"
showing 10 items of 1270 documents
ChemInform Abstract: Tuning the Band Gap of PbCrO4Through High-Pressure: Evidence of Wide-to-Narrow Semiconductor Transitions.
2014
Commercial polycrystalline and cleaved platelets from natural PbCrO4 are studied in a diamond anvil cell at ≤ 21 GPa.
Thermoelectric Radiation Detector Based on Superconductor-Ferromagnet Systems
2017
We suggest an ultrasensitive detector of electromagnetic fields exploiting the giant thermoelectric effect recently found in superconductor-ferromagnet hybrid structures. Compared with other types of superconducting detectors where the detected signal is based on variations of the detector impedance, the thermoelectric detector has the advantage of requiring no external driving fields. This is especially relevant in multipixel detectors, where the number of bias lines and the heating induced by them are an issue. We propose different material combinations to implement the detector and provide a detailed analysis of its sensitivity and speed. In particular, we perform a proper noise analysis…
Crystal growth of functional materials by using CSVS and MOCVD:The AIIMnBVI and II-oxides case
2021
En esta tesis se presenta un estudio en profundidad del crecimiento cristalino y la caracterización de algunos materiales funcionales de la familia II-VI. Las propiedades estructurales, morfológicas, ópticas y eléctricas estudiadas se han correlacionado con la metodología y condiciones de crecimiento cristalino utilizadas. Entre la variedad de materiales II-VI, se han elegido 2 familias de semiconductores debido a sus propiedades singulares. El primero incluye los óxidos del grupo II, con elementos como el Zinc y el Cadmio, con una alta transparencia en el rango óptico visible. Estos compuestos se pueden usar en diversas aplicaciones en optoelectrónica, incluyendo su uso como óxidos conduct…
A Model for Assessing the Magnitude and Distribution of Sheath Currents in Medium and High-Voltage Cable Lines
2020
In this article, the authors discuss a simulation model to study the effect of cross-bonding of metallic sheaths, and/or nonmagnetic armors, of single-core medium- and high-voltage cables in the same circuit. In single-core cables, the resistive losses due to the induced circulating currents in cable sheaths or armors cause an increase of the cable temperature, which therefore reduces its ampacity. This is a serious issue affecting the distribution and transmission lines. In addition, the risk of electric shock due to induced voltages may be present if a person is in contact with the armor/sheath at its unbounded end. For these reasons, special bonding techniques of metal sheaths are employ…
Reconfigurable nonlinear response of dielectric and semiconductor metasurfaces
2021
Abstract Optically resonant dielectric and semiconductor metasurfaces are an emerging and promising area of nanophotonics and light–matter interaction at the nanoscale. Recently, active tuning of the linear response and nonlinear effects of these components has received an increasing amount of interest. However, so far these research directions have remained separated with only few sporadic works that study their combination beginning to appear in the literature. The evolution of nonlinear metasurfaces based on dielectric and semiconductor materials toward reconfigurable and dynamic components could potentially answer the demand of integrated on-chip components that realize essential functi…
Digital pulse processing techniques for X-ray and gamma ray semiconductor detectors
2012
Digital pulse processing (DPP) systems, based on direct digitizing and processing of detector signals, have recently been favoured over analog electronics, ensuring higher flexibility, stability and lower dead time. We present our research activities on the development of X-ray and gamma ray spectrometers based on semiconductor detectors and DPP systems. We developed off-line and real-time DPP systems able to perform precise height and shape analysis of detector pulses. X-ray and gamma ray spectra measurements with cadmium telluride (CdTe) and germanium (Ge) detectors highlight the excellent performance of the systems both at low and high rate environments (up to 800 kcps).
Real-Time Minimization Power Losses by Driven Primary Regulation in Islanded Microgrids
2020
Islanded microgrids are small networks that work independently from the main grid. The frequency and voltage in islanded microgrids are affected directly by the output power of distributed generators and power demand variations. In this work, a real-time driven primary regulation, which relies on optimized P-f droop coefficients, is proposed. In all operating conditions, it minimizes the power losses for islanded microgrids. The proposed configuration will allow the optimization modules to interact with each other and adjust parameters producing a suitable power sharing among generators. The methodology is tested based on a hardware-in-the-loop experimental set-up where distributed generato…
Phosphotungstic acid (PTA) in the synthesis of 3D CdS superstructures by diffusion assisted hydrothermal method
2015
Abstract In this study, the synthesis of cadmium sulfide (CdS) microstructures by gas diffusion assisted hydrothermal method using phosphotungstic acid (PTA) is reported. The as-synthesized products were characterized by Fourier transform infrared (FTIR), powder X-ray diffraction (XRD) and scanning electron microscopy (SEM). The effects of PTA dose, thioacetamide amount, time and temperature on the morphology of obtained particles have been studied. In this process, PTA ion host stabilizes the CdS particles against aggregation and thioacetamide plays two roles, being at the same time a sulfur source and a capping ligand. Based on the performed analyses it seems that the thioacetamide is mor…
Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
2020
The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region. Capacitance-voltage profiling with monochromatic illumination showed that in the InGaN underlayer (UL), the density of deep traps with optical threshold near 1.5 eV was much higher than in the QW and higher than for structures without InGaN. Irradiation with 5 MeV electrons strongly increased the concentration of these 1.5 eV traps in the QWs, with the increase more pronounced for samples witho…
The Importance of Electronic Dimensionality in Multiorbital Radical Conductors
2019
The exceptional performance of oxobenzene-bridged bis-1,2,3-dithiazolyls 6 as single-component neutral radical conductors arises from the presence of a low-lying π-lowest unoccupied molecular orbital, which reduces the potential barrier to charge transport and increases the kinetic stabilization energy of the metallic state. As part of ongoing efforts to modify the solid-state structures and transport properties of these so-called multiorbital materials, we report the preparation and characterization of the acetoxy, methoxy, and thiomethyl derivatives 6 (R = OAc, OMe, SMe). The crystal structures are based on ribbonlike arrays of radicals laced together by S···N′ and S···O′ secondary bondin…