Search results for "Conductor"
showing 10 items of 1270 documents
Characterization By Electroreflectance Of Thin Films And Thin Film Interfaces In Layered Structures.
1987
This paper reports investigations of ZnS quasi-amorphous films by electroreflectance (ER). The films were produced by thermal evaporation and their structure determined by electron diffraction. A voltage Vo cos cut was applied through the film with two evaporated Al electrodes. A lock-in amplifier gave 2 signals, Sf at f=ω/2π frequency and S2f at 2f frequency. The S2f spectrum, characteristic of the centrosymmetric bulk component of the film, reveals tails of localized states typical of amorphous semi-conductors. The Sf spectrum, characteristic of the interface layers with broken centro-symmetry, reveals tails of impurity levels which we attributed to diffusion of the electrode metal into t…
<title>Holographic recording in amorphous chalcogenide semiconductor photoresists</title>
1998
The properties and mechanism of relaxation processes of holographic gratings in amorphous chalcogenide semiconductor films have been studied. The possibilities of the practical applications of these materials as the photoresists for the production of the relief holograms and holographic optical elements are discussed. It is shown that the self- enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency of the holograms.© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Elemental distribution and structural characterization of GaN/InGaN core-shell single nanowires by Hard X-ray synchrotron nanoprobes
2019
Improvements in the spatial resolution of synchrotron-based X-ray probes have reached the nano-scale and they, nowadays, constitute a powerful platform for the study of semiconductor nanostructures and nanodevices that provides high sensitivity without destroying the material. Three complementary hard X-ray synchrotron techniques at the nanoscale have been applied to the study of individual nanowires (NWs) containing non-polar GaN/InGaN multi-quantum-wells. The trace elemental sensitivity of X-ray fluorescence allows one to determine the In concentration of the quantum wells and their inhomogeneities along the NW. It is also possible to rule out any contamination from the gold nanoparticle …
Phonon-induced optical superlattice
2005
We demonstrate the formation of a dynamic optical superlattice through the modulation of a semiconductor microcavity by stimulated acoustic phonons. The high coherent phonon population produces a folded optical dispersion relation with well-defined energy gaps and renormalized energy levels, which are accessed using reflection and diffraction experiments.
<title>Relaxation processes in amorphous As-S and As-Se films</title>
1997
The relaxation of optical, mechanical and chemical properties of as-evaporated amorphous As-S and As-Se films while storing them at room temperature is investigated. The AsxS1-x films with arsenic content 0.3 less than x less than 0.4 are found to undergo maximal changes. It is shown that the phenomenon of dark self-enhancement of holograms (an increase of diffraction efficiency over time without any special treatment) can be used as an efficient method for investigation of relaxation processes in the amorphous chalcogenide films. The changes of diffraction efficiency in amorphous As2S3 films have been measured as a function of aging time and recording light intensity. The relaxation proces…
Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure
2014
In this work, we focus on the study of the structural and elastic properties of mercury digallium sulfide (HgGa2S4) at high pressures. This compound belongs to the family of AB(2)X(4) ordered-vacancy compounds and exhibits a tetragonal defect chalcopyrite structure. X-ray diffraction measurements at room temperature have been performed under compression up to 15.1 GPa in a diamond anvil cell. Our measurements have been complemented and compared with ab initio total energy calculations. The axial compressibility and the equation of state of the low-pressure phase of HgGa2S4 have been experimentally and theoretically determined and compared to other related ordered-vacancy compounds. The pres…
Preparation of superconducting thin films of UNiAl
2005
Abstract Epitaxial thin films of the unconventional heavy fermion superconductor UNi 2 Al 3 we prepared by coevaporation of the elementary components in a molecular beam epitaxy system (MBE). The phase purity and structural quality of the films deposited on (0 1 0)- or (1 1 2)-oriented YAlO 3 substrates were studied by X-ray diffraction and RHEED. The observed R ( T ) behavior is consistent with data obtained from bulk samples and proves the purity of the films. Superconductivity was found with transition temperature T c =0.97 K.
Performance of a new real time digital pulse processing system for X-ray and gamma ray semiconductor detectors
2014
New generation spectroscopy systems have advanced towards digital pulse processing (DPP) approaches. DPP systems, based on direct digitizing and processing of detector signals, have recently been favoured over analog pulse processing electronics, ensuring better performance. In this work, we present the performance of a new real time DPP system for X-ray and gamma ray semiconductor detectors. The system is based on a commercial digitizer equipped with a custom DPP firmware, developed by our group, for on-line pulse shape and height analysis. X-ray and gamma ray spectra measurements with cadmium telluride (CdTe) and germanium (Ge) detectors, coupled to resistive feedback preamplifiers, will …
Digital filtering and analysis for a semiconductor X-ray detector data acquisition
2007
Abstract Pile-up distortion is a major drawback in X-ray spectroscopy at high count rate. Pulse width narrowing with shaping techniques can lead to the reduction of the pile-up distortion, but a low shaping time reduces the noise filtration and leads to a poor energy resolution. Thus, only a best compromise solution between the pile-up and the noise requirements is achievable. The hardware manipulation needed to adjust the parameters of the traditional electronic shaping amplifiers makes it uneasy to tests various settings in different conditions. Digital techniques can help to overcome such difficulties. A digital signal processing and analysis system for X-ray spectroscopy is described in…
Automorphism groups of some affine and finite type Artin groups
2004
We observe that, for fixed n ≥ 3, each of the Artin groups of finite type An, Bn = Cn, and affine type ˜ An−1 and ˜ Cn−1 is a central extension of a finite index subgroup of the mapping class group of the (n + 2)-punctured sphere. (The centre is trivial in the affine case and infinite cyclic in the finite type cases). Using results of Ivanov and Korkmaz on abstract commensurators of surface mapping class groups we are able to determine the automorphism groups of each member of these four infinite families of Artin groups. A rank n Coxeter matrix is a symmetric n × n matrix M with integer entries mij ∈ N ∪ {∞} where mij ≥ 2 for ij, and mii = 1 for all 1 ≤ i ≤ n. Given any rank n Coxeter matr…