Search results for "Crystal"
showing 10 items of 22886 documents
Luminescence of polymorphous SiO2
2016
Abstract The luminescence of self-trapped exciton (STE) was found and systematically studied in tetrahedron structured silica crystals (α-quartz, coesite, cristobalite) and glass. In octahedron structured stishovite only host material defect luminescence was observed. It strongly resembles luminescence of oxygen deficient silica glass and γ or neutron irradiated α-quartz. The energetic yield of STE luminescence for α-quartz and coesite is about 20% of absorbed energy and about 5(7)% for cristobalite. Two types of STE were found in α-quartz. Two overlapping bands of STEs are located at 2.5–2.7 eV. The model of STE is proposed as Si–O bond rupture, relaxation of created non-bridging oxygen (N…
Sub-nanosecond excitonic luminescence in ZnO:In nanocrystals
2019
The financial support of research European Union ERA.NET RUS_ST20170-51 . This work was partly supported by Russian Foundation for Basic Research, Russia , project No. 18-52-76002 . The sample preparation was carried out as part of SFERA II project -Transnational Access activities ( European Union 7th Framework Programme Grant Agreement N3126430 ).
Synthesis of Eu<sup>2+</sup> and Dy<sup>3+</sup> Doped Strontium Aluminates and their Properties
2016
Strontium aluminate phosphors were synthesized by the solution combustion method using citric acid, urea or glycine as reducing agent and europium and dysprosium as dopants. The content of both dopants was in the range of 1 – 2 mol%. Dependence of phase composition, crystallite size and specific surface area on calcinations temperature, used reducing agents and dopants were determined. Luminescent properties of the calcinated at 1300 °C powders contained SrAl2O4 (90 %) and Sr4Al24O25 (10%) phases with crystallite size of 80 nm were determined.
Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: effect of thermal annealing
2013
International audience; ZnCdO nanowires with up to 45% Cd are demonstrated showing room temperature photoluminescence (PL) down to 2.02 eV and a radiative efficiency similar to that of ZnO nanowires. Analysis of the microstructure in individual nanowires confirms the presence of a single wurtzite phase even at the highest Cd contents, with a homogeneous distribution of Cd both in the longitudinal and transverse directions. Thermal annealing at 550 C yields an overall improvement of the PL, which is blue-shifted as a result of the homogeneous decrease of Cd throughout the nanowire, but the single wurtzite structure is fully maintained.
Spectroscopic study of the electric field induced valence change of Fe-defect centers in SrTiO(3)
2011
The electrochemical changes induced by an electric field in Fe-doped SrTiO(3) have been investigated by X-ray absorption spectroscopy (XANES and EXAFS), electron paramagnetic resonance (EPR) and Raman spectroscopy. A detailed study of the Fe dopant in the regions around the anode and cathode reveals new insights into the local structure and valence state of Fe in SrTiO(3) single crystals. The ab initio full multiple-scattering XANES calculations give an evidence of the oxygen vacancy presence in the first coordination shell of iron. Differences in the length and disorder of the Fe-O bonds as extracted from EXAFS are correlated to the unequivocal identification of the defect type by compleme…
Positron trapping defects in free-volume investigation of Ge–Ga–S–CsCl glasses
2016
Abstract Evolution of free-volume positron trapping defects caused by crystallization process in (80GeS 2 –20Ga 2 S 3 ) 100−х (СsCl) x , 0 ≤ x ≤ 15 chalcogenide-chalcohalide glasses was studied by positron annihilation lifetime technique. It is established that CsCl additives in Ge–Ga–S glassy matrix transform defect-related component spectra, indicating that the agglomeration of free-volume voids occurs in initial and crystallized (80GeS 2 –20Ga 2 S 3 ) 100−х (СsCl) x , 0 ≤ x ≤ 10 glasses. Void fragmentation in (80GeS 2 –20Ga 2 S 3 ) 85 (СsCl) 15 glass can be associated with loosing of their inner structure. Full crystallization in each of these glasses corresponds to the formation of defe…
Simulation of IQE tuning of individual cells for DC-balancing multijunction tandem cells
2016
In the present work, the performance of stacks of cells connected in series is examined at different levels of internal quantum efficiency (IQE). Incident photons, generated by employing the ASTM G173-03 data set, are accounted for individually as they interact with the stack of cells. The efficiencies of the devices studied are dependent upon the DC balance throughout the stack of cells. It is demonstrated that reducing the internal quantum efficiency of upper cells can lead to a better DC balance and thereby higher efficiency.
Tetrahedral versus octahedral Mn site coordination in wurtzite and rocksalt Zn1−xMnxO investigated by means of XAS experiments under high pressure
2007
Abstract We present the results of x-ray absorption measurements carried out in Zn 1− x Mn x O thin films under high pressure. The Mn environment remains essentially the same for nominal Mn concentrations given by x = 0.05 , 0.1, 0.15 and 0.25. Both the XANES (X-ray Absorption Near Edge Structure) and EXAFS (Extended X-ray Absorption Fine Structure) indicate that Mn occupies the Zn site, being surrounded by four oxygen atoms at 2.02±0.01 A. The substitutional hypothesis is reinforced by comparing the differences between the ambient (wurtzite) and high pressure (rocksalt) spectra, which correspond to tetrahedral and octahedral Mn environments.
Normal and relaxor ferroelectric behavior in the Ba1−xPbx(Ti1−yZry)O3 solid solutions
2017
Abstract Polycrystalline samples of Ba 1−x Pb x (Ti 1−y Zr y )O 3 (BPTZ) with x = 0.025 & 0.1 and 0.10 ≤ y ≤ 0.50 have been synthesized by high-temperature solid-state reaction technique. X-ray diffraction reveals the formation of single phase with tetragonal or cubic structure. Dielectric investigations were carried out in the temperature range from 80 to 445 K with frequencies range from 10 2 to 10 6 Hz. A broad dielectric anomaly coupled with the shift of dielectric maxima toward a higher temperature with increasing frequency indicates either a diffuse phase transition or relaxor behavior in some of these ceramics. Whatever lead content, when zirconium is substituted by titanium, T C an…
High-pressure x-ray-absorption study of GaSe
2002
The III-VI layered semiconductor InSe has been studied by high-pressure single crystal x-ray absorption spectroscopy up to a maximum pressure of 14 GPa. The In-Se distance has been measured in both the low- pressure layered phase and the high-pressure NaCl phase. The bond compressibility in the layered phase is lower than the ``a'' crystallographic parameter compressibility, which implies an increase of the angle between the In-Se bond and the layer plane. Under plausible hypothesis, a description of the evolution of the whole structure with pressure is given. In particular, the intralayer distance is observed to increase with increasing pressure. A plausible precursor defect and a simple m…