6533b81ffe1ef96bd127717a
RESEARCH PRODUCT
High-pressure x-ray-absorption study of GaSe
V. MuñozJulio Pellicer-porresSakura PascarelliCh. FerrerAlfredo SeguraAlain PolianJ. P. ItiéA. San MiguelMichel Gauthiersubject
010302 applied physics[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph]Materials scienceCondensed matter physicsAbsorption spectroscopybusiness.industryPlane (geometry)[SDU.STU.GP]Sciences of the Universe [physics]/Earth Sciences/Geophysics [physics.geo-ph]X-ray02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesOpticsSemiconductorPhase (matter)0103 physical sciencesCompressibility[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci][PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]0210 nano-technologyAbsorption (electromagnetic radiation)businessSingle crystalComputingMilieux_MISCELLANEOUSdescription
The III-VI layered semiconductor InSe has been studied by high-pressure single crystal x-ray absorption spectroscopy up to a maximum pressure of 14 GPa. The In-Se distance has been measured in both the low- pressure layered phase and the high-pressure NaCl phase. The bond compressibility in the layered phase is lower than the ``a'' crystallographic parameter compressibility, which implies an increase of the angle between the In-Se bond and the layer plane. Under plausible hypothesis, a description of the evolution of the whole structure with pressure is given. In particular, the intralayer distance is observed to increase with increasing pressure. A plausible precursor defect and a simple mechanism for the transition are also presented. The conclusions can be readily translated to other III-VI layered semiconductors.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2002-04-01 |