0000000000348741
AUTHOR
Ch. Ferrer
The application of the photoacoustic transmittance oscillations for determining elastic constants in gallium and indium selenides
Transmittance periodic oscillations are observed in GaSe and InSe on excitation with optical pulses. Such oscillations are explained in terms of photoacoustic generation of dilatational waves, which become resonant within the crystal. Spectral analysis of those oscillations in samples of different thickness has led to an accurate determination of the longitudinal acoustic‐wave velocity along the crystallographic axis c. Julio.Pellicer@uv.es ; Chantal.Ferrer@uv.es ; Vicente.Munoz@uv.es
High-pressure x-ray-absorption study of GaSe
The III-VI layered semiconductor InSe has been studied by high-pressure single crystal x-ray absorption spectroscopy up to a maximum pressure of 14 GPa. The In-Se distance has been measured in both the low- pressure layered phase and the high-pressure NaCl phase. The bond compressibility in the layered phase is lower than the ``a'' crystallographic parameter compressibility, which implies an increase of the angle between the In-Se bond and the layer plane. Under plausible hypothesis, a description of the evolution of the whole structure with pressure is given. In particular, the intralayer distance is observed to increase with increasing pressure. A plausible precursor defect and a simple m…
Growth and characterisation of MnTe crystals
We report on the low temperature growth of MnTe crystals by means of travelling solution methods. Two different processes are considered; a classical THM process using a low temperature presynthesised MnTe ingot, and a modified THM process, in which an increasing length of solvent zone collects the tellurium that was added to the stoichiometric charge to decrease the reaction temperature. Ingots from the two methods are analysed by means of scanning electron microscopy, X-ray diffractometry, resistivity, susceptibility and optical absorption measurements.