Search results for "Crystallographic"
showing 10 items of 202 documents
Combustion wave structure during the MoSi2 synthesis by Mechanically-Activated Self-propagating High-temperature Synthesis (MASHS): In situ time-reso…
2006
Abstract In situ synchrotron time-resolved X-ray diffraction experiments coupled with an infrared imaging camera have been used to reveal the combustion wave structure during the production of MoSi2 by Mechanically Activated Self-propagating High-temperature Synthesis (MASHS). The fast combustion front exhibits a form described as an ‘equilibrium structure’ where the chemical reaction is the sole major driving force. In the MASHS process, oxide-free interfaces between Mo and Si nanocrystallites enhance the reaction Mo+2Si→MoSi2. Exhaustive time-resolved investigations show a possible solid-state process in the first second of the reaction within the combustion front. If preheating is added,…
Defects in oxide glasses
2005
An insight into the present understanding of point defects in the simplest and the most radiation-resistant oxide glass, glassy silicon dioxide (silica) is presented. The defects and their generation processes in glassy and α-quartz forms of silicon dioxide are significantly different. The only defect, confirmed to be similar in both materials, is oxygen vacancy. In silica, additional defects of dangling bond type are generated from precursor sites formed by strained Si-O bonds, and by modifier ions. The optical absorption spectra of silica are dominated by paramagnetic dangling bond type defects: silicon dangling bond (“E′-center”) and oxygen dangling bond (“non-bridging oxygen hole center…
Optical properties of lithium niobate single crystals
2005
Studies of thermal and γ-irradiation effects on the optical properties in congruous lithium niobate single crystals containing Y, Mg, Gd, B, and Zn dopants including samples with double dopants Y, Mg and Gd, Mg are reported. Formation of defects at irradiation and thermal treatment of the samples is explored by electron absorption spectra. Considerable increase of absorption with the dose of γ-radiation is observed at 500 nm. The changes of absorption examined under different conditions are explained by creation and destruction of Nb 4 + defects.
The Effects of Admixtures on Resistance to Radiation of Lithium Niobate Crystals
2015
The studies of optical absorption and transmission of crystalline lithium niobate compounds modified by rare-earth and alkali-earth elements: LiNbO3: Y (0.46 wt %), LiNbO3: Y (0.32 wt %), Mg (0.24 wt %), LiNbO3: Mg (0.27 wt %), LiNbO3: Gd (0.004, 0.04, 0.26, and 0.43 wt %), and ostensibly pure LiNbO3 is reported. The features of absorption and transmission are examined with respect to the dosage of γ-irradiation, the annealing temperature, and the type and concentration of modifying admixtures. The features revealed in different ways of bleaching γ-irradiated and annealed in vacuum ostensibly pure lithium niobate crystals are used to refine the mechanisms of developing electron and point de…
PtTe2: Potential new material for the growth of defect-free TeO2 single crystals
2008
Abstract The dissociation of Te–O bonds is the main drawback, which hampers the yield of large-sized paratellurite single crystals of high optical quality when using platinum crucibles. In this work, it is assumed that a catalytic dissociation process involves the intermediate formation of platinum tellurides, these ones being then responsible for entrapment of gas bubbles and black precipitates when growth proceeds. To alleviate this difficulty, we suggest that platinum ditelluride could be a chemically more appropriate compound instead of pure platinum. First experiments on direct transformation of platinum sheets into PtTe 2 under tellurium gas atmosphere are described, as well as the pr…
Steering of a Sub-GeV electron beam through planar channeling enhanced by rechanneling
2014
We report the observation of efficient steering of a 855 MeV electron beam at MAMI (MAinzer MIkrotron) facilities by means of planar channeling and volume reflection in a bent silicon crystal. A $30.5\text{ }\text{ }\ensuremath{\mu}\mathrm{m}$ thick plate of (211) oriented Si was bent to cause quasimosaic deformation of the (111) crystallographic planes, which were used for coherent interaction with the electron beam. The experimental results are analogous to those recorded some years ago at energy higher than 100 GeV, which is the only comparable study to date. Monte Carlo simulations demonstrated that rechanneling plays a considerable role in a particle's dynamics and hinders the spoiling…
Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing
2018
InAs crystals are emerging materials for various devices like radio frequency transistors and infrared sensors. Control of oxidation-induced changes is essential for decreasing amounts of the harmful InAs surface (or interface) defects because it is hard to avoid the energetically favored oxidation of InAs surface parts in device processing. We have characterized atomic-layer-deposition (ALD) grown Al2O3/InAs interfaces, preoxidized differently, with synchrotron hard X-ray photoelectron spectroscopy (HAXPES), low-energy electron diffraction, scanning tunneling microscopy, and time-of-flight elastic recoil detection analysis. The chemical environment and core-level shifts are clarified for w…
Creation of glass-characteristic point defects in crystalline SiO2 by 2.5 MeV electrons and by fast neutrons
2019
The support from M -ERANET project “MyND” is acknowledged. K.K. was partially supported by the Collaborative Research Project of Laboratory for Materials and Structures, Tokyo Institute of Technology . Visiting researcher support from Ecole Polytechnique, Palaiseau is appreciated. Mr. Olivier Cavani is thanked for the expert help with irradiations.
Influence of Ge doping level on the EPR signal of Ge(1), Ge(2) and E'Ge defects in Ge-doped silica
2011
Abstract We present an experimental investigation on the Ge doping level dependence of the Electron Paramagnetic Resonance (EPR) signal spectral features of the Ge(1), Ge(2) and E'Ge defects induced in Ge doped silica. We have studied samples produced by sol–gel or PCVD techniques and doped with different amounts of Ge up to 20% by weight. The samples were gamma or beta ray irradiated and successively they were thermally treated to isolate the EPR signals of the different point defects. The data show that the EPR line shapes of the Ge(1) and the Ge(2) centers are progressively modified for doping level higher than 1%, whereas the line shape of the E'Ge defect appears independent from the do…
Dependence of the emission properties of the germanium lone pair center on Ge doping of silica
2011
We present an experimental investigation regarding the changes induced by the Ge doping level on the emission profile of the germanium lone pair center (GLPC) in Ge doped silica. The investigated samples have been produced by the sol-gel method and by plasma-activated chemical vapor deposition and have doping levels up to 20% by weight. The recorded photoluminescence spectra show that the GLPC emission profile is the same when the Ge content is lower than ∼ 1% by weight, whereas it changes for higher doping levels. We have also performed Raman scattering measurements that show the decrease of the D1 Raman band at 490 cm( - 1) when the Ge content is higher than 1% by weight. The data suggest…