Search results for "Dependence"

showing 10 items of 2462 documents

Beyond path dependence: Explorative orientation, slack resources, and managerial intentionality to internationalize in SMEs

2015

Abstract Managerial intentionality plays an important role in a firm's selection of its internationalization path. In relation to small and medium sized enterprises (SMEs), most studies focus on the individual traits that foster managerial intentionality without considering organizational-level antecedents. This study seeks to address this gap by focusing on two organizational antecedents: the firm's exploration and exploitation orientations, and its slack resources. The firm's orientations affect the application of different learning processes, including knowledge acquisition, information interpretation, and knowledge diffusion, and they shape the subjective norms prevalent in the organiza…

MarketingKnowledge managementComputingMilieux_THECOMPUTINGPROFESSIONbusiness.industryAffect (psychology)Knowledge acquisitionManagementInternationalizationOrientation (mental)IntentionalityInformation interpretationSelection (linguistics)Business and International ManagementbusinessFinancePath dependenceInternational Business Review
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Overcoming the liability of foreignness – A new perspective on Chinese MNCs

2021

Abstract We maintain that previous research on multinational corporations' liability of foreignness has underemphasized the importance of the firm's dependence on their parents, subsidiary and local resources. To address this issue, we conducted 43 semi-structured interviews with expatriate and local managers of Chinese high-tech MNCs over two years (2017–2019) and across China, Poland and Hong Kong to understand how they cope with the liability of foreignness in Poland. Using the resource dependence perspective, the linkage, leverage, learning (LLL) paradigm and the institutional view, we identified six dimensions affecting the liability of foreignness: resource commitment, information flo…

MarketingLeverage (finance)Resource dependence theoryExpatriate05 social sciencesSubsidiaryLiabilityMultinational corporation0502 economics and businessResource integration050211 marketingBusinessChina050203 business & managementIndustrial organizationJournal of Business Research
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Intermediate units in multinational corporations: A resource dependency view on coordinative versus entrepreneurial roles

2021

Abstract Due to the dispersion of headquarters’ activities across organizational and geographical boundaries, intermediate units (IUs) are emerging as a key actor of international business. IUs are intermediate structural layers between headquarters (HQ) and local subsidiaries with specific HQ responsibilities. Our study relies on original data of 67 IUs and, taking on a Resource Dependence approach, explores empirically the two HQ roles attributed to IUs: coordinative versus entrepreneurial. According to our results, the main differences between both roles relate to external network embeddedness, internal network position and autonomy. We argue that these differences arise from the dominan…

MarketingValue (ethics)Resource dependence theoryEmbeddednessmedia_common.quotation_subject05 social sciencesSubsidiaryInternational businessDevelopment theoryMultinational corporation0502 economics and business050211 marketingBusinessBusiness and International Management050203 business & managementFinanceIndustrial organizationAutonomymedia_commonInternational Business Review
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Mass transport problems obtained as limits of p-Laplacian type problems with spatial dependence

2014

Abstract. We consider the following problem: given a bounded convex domain Ω ⊂ ℝ N ${\Omega \subset \mathbb {R}^N}$ we consider the limit as p → ∞ of solutions to - div ( b p - p | D u | p - 2 D u ) = f + - f - ${- \operatorname{div} (b_{p}^{-p} |Du|^{p-2} Du)=f_+ - f_-}$ in Ω and b p - p | D u | p - 2 ∂ u ∂ η = 0 ${ b_{p}^{-p} |Du|^{p-2} \frac{\partial u}{\partial \eta }=0}$ on ∂ Ω ${\partial \Omega }$ . Under appropriate assumptions on the coefficients bp that in particular verify that lim p → ∞ b p = b ${ \lim _{p\rightarrow \infty } b_p = b }$ uniformly in Ω ¯ ${\overline{\Omega }}$ , we prove that there is a uniform limit of u p j ${u_{p_j}}$ (along a sequence p j → ∞ ${p_j \rightarrow…

Mass transportQA299.6-433Mathematical analysismass transportp-laplacian equationType (model theory)Bounded functionp-Laplacianmonge–kantorovich problems45g10Limit (mathematics)Spatial dependenceConvex domain49j4549j20AnalysisMathematicsAdvances in Nonlinear Analysis
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Why the Cosmological Constant Seems to Hardly Care About Quantum Vacuum Fluctuations: Surprises From Background Independent Coarse Graining

2020

International audience; Background Independence is a sine qua non for every satisfactory theory of Quantum Gravity. In particular if one tries to establish a corresponding notion of Wilsonian renormalization, or coarse graining, it presents a major conceptual and technical difficulty usually. In this paper we adopt the approach of the gravitational Effective Average Action and demonstrate that generically coarse graining in Quantum Gravity and in standard field theories on a non-dynamical spacetime are profoundly different. By means of a concrete example, which in connection with the cosmological constant problem is also interesting in its own right, we show that the surprising and sometime…

Materials Science (miscellaneous)Background independent quantum gravityBiophysicsAsymptotic safety in quantum gravityGeneral Physics and AstronomyCosmological constantnonperturbativeasymptotic safety01 natural sciencesrenormalizationGravitationRenormalizationTheoretical physicsVacuum energyFunctional renormalisation group0103 physical sciencesultravioletBackground independencePhysical and Theoretical Chemistry010306 general physicsMathematical PhysicsPhysicsenergy: highcosmological constantbackgroundfunctional renormalization grouplcsh:QC1-999fluctuation: vacuumspace-timegravitationquantum gravity[PHYS.GRQC]Physics [physics]/General Relativity and Quantum Cosmology [gr-qc]Quantum gravityrenormalisation grouprenormalization grouplcsh:PhysicsCosmological constant problem
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Surface-Specific Spectroscopy of Water at a Potentiostatically Controlled Supported Graphene Monolayer

2019

Knowledge of the structure of interfacial water molecules at electrified solid materials is the first step toward a better understanding of important processes at such surfaces, in, e.g., electrochemistry, atmospheric chemistry, and membrane biophysics. As graphene is an interesting material with multiple potential applications such as in transistors or sensors, we specifically investigate the graphene–water interface. We use sum-frequency generation spectroscopy to investigate the pH- and potential-dependence of the interfacial water structure in contact with a chemical vapor deposited (CVD) grown graphene surface. Our results show that the SFG signal from the interfacial water molecules a…

Materials science02 engineering and technologySubstrate (electronics)010402 general chemistryElectrochemistry01 natural sciencesArticlelaw.inventionMembrane biophysicslawSum-frequency generation spectroscopyMoleculePhysical and Theoretical ChemistrySpectroscopyWater interfaceInterfacial water structureGrapheneGraphene layersInterfacial water molecules021001 nanoscience & nanotechnologyChemical vapor deposited3. Good health0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsGeneral EnergyChemical engineeringAtmospheric chemistry0210 nano-technologyMembrane biophysicsLayer (electronics)Potential dependenceThe Journal of Physical Chemistry. C, Nanomaterials and Interfaces
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Investigating the mechanical properties of GeSn nanowires.

2019

Germanium tin (GeSn) has been proposed as a promising material for electronic and optical applications due to the formation of a direct band-gap at a Sn content >7 at%. Furthermore, the ability to manipulate the properties of GeSn at the nanoscale will further permit the realisation of advanced mechanical devices. Here we report for the first time the mechanical properties of GeSn nanowires (7.1-9.7 at% Sn) and assess their suitability as nanoelectromechanical (NEM) switches. Electron microscopy analysis showed the nanowires to be single crystalline, with surfaces covered by a thin native amorphous oxide layer. Mechanical resonance and bending tests at different boundary conditions were use…

Materials scienceAlloyNanowirechemistry.chemical_elementGermanium02 engineering and technologyBendingengineering.material010402 general chemistry01 natural sciencesGeneral Materials ScienceMechanical resonanceNanoscopic scaleGermanium tin alloybusiness.industryMechanical behaviour021001 nanoscience & nanotechnology0104 chemical sciencesNanowirechemistryengineeringOptoelectronicsSize dependence0210 nano-technologyTinbusinessLayer (electronics)Nanoscale
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Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

2020

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such devices, other features related to the electrical and structural properties of the GaN layer prevent an efficient radiative recombination. This work illustrates some advances made on ZnO/GaN-based LEDs, by using high-thickness GaN layers for the p-region of the device and an ad hoc device topology. Heterojunction LEDs consist of a quasicoalesced non-intentionally doped ZnO nanorod layer deposited by chemical bath deposition onto a metal&ndash

Materials scienceComputer Networks and CommunicationsBand gapgrowthlcsh:TK7800-836002 engineering and technologyfabricationElectroluminescence01 natural sciencesSettore ING-INF/01 - Elettronicaganlaw.inventionelectroluminescencelawleds0103 physical sciencesmorphologyzno/gan heterojunction ledsSpontaneous emissionElectrical and Electronic Engineeringepitaxial p-gan layers010302 applied physicsZnO nanorodbusiness.industryzno nanorodszno/gan heterostructurelcsh:Electronicsepitaxial p-GaN layerHeterojunctiondependence021001 nanoscience & nanotechnologyoptical-propertieschemical bath depositionSemiconductorHardware and ArchitectureControl and Systems EngineeringZnO/GaN heterojunction LEDSignal ProcessingznoOptoelectronicsNanorod0210 nano-technologybusinessnanorodsChemical bath depositionLight-emitting diode
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Pressure Dependence of the Bandgap Bowing in Zinc-Blende ZnTe 1− x Se x

2002

We report on the pressure dependence of the bandgap bowing in the ZnTe 1 m x Se x alloy, in the whole composition range. The bandgap bowing parameter is shown to increase almost linearly with pressure from 1.23 at ambient pressure to 1.6 at 7 GPa. Saturation effects observed in the pressure dependence for x =0.1 and x =0.2 are shown to be related to the direct-to-indirect crossover. Results are discussed and interpreted in the framework of structural relaxation models for gap bowing. A prediction of these models (the negative bowing of the o 15 m ;X 1 transition) is shown to be compatible with the fact that the direct-to-indirect crossover pressure increases with the Se content.

Materials scienceCondensed matter physicsBand gapBowingRelaxation (NMR)Alloychemistry.chemical_elementZincPressure dependenceengineering.materialCondensed Matter PhysicschemistryengineeringSaturation (magnetic)Ambient pressureHigh Pressure Research
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Pressure-induced band anticrossing in two adamantine ordered-vacancy compounds: CdGa2S4 and HgGa2S4

2021

Abstract This paper reports a joint experimental and theoretical study of the electronic band structure of two ordered-vacancy compounds with defect-chalcopyrite structure: CdGa2S4 and HgGa2S4. High-pressure optical-absorption experiments (up to around 17 GPa) combined with first-principles electronic band-structure calculations provide compelling evidence of strong nonlinear pressure dependence of the bandgap in both compounds. The nonlinear pressure dependence is well accounted for by the band anticrossing model that was previously established mostly for selenides with defect chalcopyrite structure. Therefore, our results on two sulfides with defect chalcopyrite structure under compressio…

Materials scienceCondensed matter physicsBand gapChalcopyriteMechanical EngineeringMetals and AlloysPressure dependenceIonNonlinear systemMechanics of MaterialsVacancy defectvisual_artMaterials Chemistryvisual_art.visual_art_mediumDirect and indirect band gapsElectronic band structureJournal of Alloys and Compounds
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