Search results for "Diffraction efficiency"
showing 10 items of 64 documents
Holographic recording in amorphous As2S3 films at 633nm
2006
Abstract Holographic grating recording with focused (light intensity I = 14–124 W/cm 2 ) and unfocused ( I = 0.50–0.78 W/cm 2 ) 633 nm He–Ne laser sub-bandgap light in non-annealed and annealed a-As 2 S 3 films has been experimentally studied. The focused light recording is found to be much more efficient (diffraction efficiency up to 14.9%, specific recording energy down to 216 J/(cm 2 %)) than the unfocused light recording (0.11%, 72 400 J/(cm 2 %)). Some other properties are also different. The hologram lifetime of more than two years and positive refractive index changes take place in the case of focused recording versus two days and negative refractive index changes for unfocused r…
Diffraction-efficiency oscillations in amorphous As_2S_3 films
1999
An experimental study of the holographic gratings recorded in nonannealed, thermally with time relaxed amorphous As2S3 films by 514.5-nm light in the presence of 632.8-nm readout light is carried out. The dependences of the maximal first-order diffraction efficiency on the holographic grating period was studied in a wide range of periods, from 0.40 to 70.0 µm. A peculiar oscillatory diffraction-efficiency temporal behavior occurring under certain conditions is reported. The obtained results are discussed in terms of photoinduced structural changes, relaxational structural changes, photoinduced anisotropy, and photoinduced recharging of the localized states in the bandgap. The diffraction-ef…
Model of holographic recording in amorphous chalcogenide films using subband-gap lightat room temperature
1997
The subband-gap light holographic recording in amorphous as-evaporated ${\mathrm{As}}_{2}$${\mathrm{S}}_{3}$ films at room temperature is experimentally studied. Properties are considerably different from those of usual holographic recording based on the band-gap light induced structural changes. The most important characteristic features of this nonpermanent recording include photoinduced refractive index increase, weak photobleaching, the absence of the photoinduced thickness changes, light polarization dependence, large exposures, holographic grating shifts during the exposure and a peculiar two maxima spatial frequency response. The first order diffraction efficiency up to 4.1% is achie…
Influence of the age of amorphous nonannealed As2S3 thin films on holographic properties
1998
The dependences of the maximal first order diffraction efficiency and the corresponding specific recording energy on the holographic grating period were studied. Grating period was varied from 0.40 to 70.0 μm. Both fresh and aged films were used. A large holographic recording efficiency decrease in the course of aging is found to take place. These changes are due to the effective film grain size increase caused by the relaxational structural changes and atmospheric oxygen exposure. Results are explained with the aid of stress fields induced by the evaporation and holographic recording. The obtained results can be used to optimize the hologram recording in amorphous chalcogenide films.
Two-color holographic-grating formation in amorphous As_2S_3 films
1998
A detailed experimental study of the holographic gratings recorded in nonannealed amorphous As2S3 films by 514.5-nm light in the presence of 632.8-nm readout light is carried out. A strong influence of a continuous 632.8-nm readout is found. The dependences of the maximal first-order diffraction efficiency and the corresponding specific recording energy on the holographic grating period were studied in a wide range of periods from 0.40 to 70.0 μm for 2-yr-old films. The obtained results are discussed in terms of photoinduced structural changes, relaxational structural changes, photoinduced anisotropy, and photoinduced recharging of the localized states in the bandgap. The photoinduced sulph…
Investigations of As-S-Se thin films for use as inorganic photoresist for digital image-matrix holography
2011
AbstractAs-S-Se chalcogenide thin films are successfully employed in classical and dot-matrix holography as inorganic photoresists for obtaining a relief-phase hologram. However using these films for image-matrix hologram recording has not been studied due to some features of image-matrix technology. For the applied research of the optical properties of As-S-Se films an experimental device of digital image-matrix holographic recording based on 100 mW 405 nm semi-conductor laser and Spatial Light Modulator (SLM) has been created. The device has the following main parameters: 140 × 105 µm frame size; laser intensity during exposure 10 W/cm2. With the help of this device diffraction grating an…
<title>Dot-matrix holographic recording in amorphous chalcogenide films</title>
2006
We have developed PC controlled dot-matrix holographic recording system based on the CW diode pumped YAG:Nd SHG laser (wavelength 532 nm, power 30mW,) modulated electronically with TTL signals. Two-beam technique has been used with convergence angle 30o and PC controlled incident beam plane rotation 0-360o. Optical system consists of beam splitter, 40mm focus length forming cylindrical lens and 40mm focusing lens. Characteristic parameters of experimental equipment are following: spot size - 50-200 micrometers, direct laser writing area, limited by x-y positioning system, was 70mm x 70mm, number of writing head rotation positions up to 256 (8 bit), time of each exposure - 1-1000 msec. As th…
Holographic recording in amorphous chalcogenide semiconductor thin films
2003
Abstract A detailed study of the amorphous As–S–Se and As2S3 films as recording media for optical holography and electron beam lithography is presented. The results of R&D on resist based on the amorphous As–S–Se thin films for manufacturing of embossed holographic labels are discussed. The holographic recording of transmission and Bragg gratings was studied.
Amorphous As–S–Se semiconductor resists for holography and lithography
2002
Abstract The photo- and electron-beam induced changes in solubility of thin films of the amorphous chalcogenide semiconductors As–S–Se and As 2 S 3 have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement (SE) phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency (DE) of the holograms.
<title>Amorphous chalcogenide thin films as a media for holographic recording</title>
2004
The amorphous As2S3 and As40S15Se45 films as a recording media for optical holography and lithography were studied. The results on research of the transmission, surface-relief and Bragg reflection grating holographic recording and readout conditions are presented. The recording of transmission holographic gratings in As40S15Se45 films was performed by He-Ne (0.6328 μm) laser beam, while the redout of the diffraction efficiency was made at Bragg agle using diode (0.805 μm) laser lines. The Bragg reflection gratings in As2S3 films were recorded and studied by Ar+ laser line 0.5145 μm. The surface-relief modulated gratings with a period of 0.15 μm - 1 μm were recorded.© (2004) COPYRIGHT SPIE--…