Search results for "Diode"
showing 10 items of 469 documents
A High‐Capacity Negative Electrode for Asymmetric Supercapacitors Based on a PMo 12 Coordination Polymer with Novel Water‐Assisted Proton Channels
2020
The development of a negative electrode for supercapacitors is a critical challenge for the next-generation of energy-storage devices. Herein, two new electrodes formed by the coordination polymers [Ni(itmb)4 (HPMo12 O40 )]·2H2 O (1) and [Zn(itmb)3 (H2 O)(HPMo12 O40 )]·4H2 O (2) (itmb = 1-(imidazo-1-ly)-4-(1,2,4-triazol-1-ylmethyl)benzene), synthesized by a simple hydrothermal method, are described. Compounds 1 and 2 show high capacitances of 477.9 and 890.2 F g-1 , respectively. An asymmetric supercapacitor device assembled using 2 which has novel water-assisted proton channels as negative electrode and active carbon as positive electrode shows ultrahigh energy density and power density of…
Synthesis and Electronic Spectra of Substitutedp-Distyrylbenzenes for the Use in Light-Emitting Diodes
2000
The influence of substitution on the absorption and Luminescence spectra of oligo(phenylenevinylene)s has been studied using distyrylbenzene (DSB) as a model compound. The degree, character, and pattern of substitution was varied systematically, altering the electronic properties of the DSB, the wavelength of the emitted light could be tuned over a range of 100 nm. The syntheses of 6b—h were performed by twofold Wittig Horner-olefinations of bisphoshonates 1a, b with substituted benzaldehydes 2a—i, 6ivia Heck-reaction of the dibromosulfonylbenzene 3, 6k by Siegrist-reaction of 4 with N-phenylbenzaldimine and the Knoevenagel-reaction of benzyl cyanide with 5 led to 6l.
Pyrene-fused bisphenazinothiadiazoles with red to NIR electroluminescence
2017
The synthesis and characterisation of two pyrene-fused phenazinothiadiazole derivatives with different substituents is described. Light-emitting diodes incorporating such derivatives display red to near-infrared electroluminescence with emission peaks at wavelengths as long as 721 nm, illustrating that pyrene-fused bisphenazinothiadiazoles can serve as deep red and NIR emitters.
Datu pārraides diode
2015
Pasaulē arvien biežāk notiek datorsistēmu “uzlaušana” un kompromitēšana. Datorsistēmas var saturēt gan klasificētu informāciju, kuras izpaušana ir nepieļaujama, gan infrastruktūru, kuras bojāšana var radīt smagas sekas un apdraudēt cilvēku dzīvības. Bieži vien informācijas izpaušanas vai datorsistēmas bojāšanas iemesls ir saistīts ar cilvēcisko faktoru. Cilvēks bieži vien izvēlas ērtības un acumirklīgus labumus, nevis drošu datorsistēmas aizsardzību. Datorsistēmu aizsardzībā, iepriekš minētās problēmas atrisina vienvirziena datu pārraides risinājums – “Datu pārraides diode”. Darba mērķis izveidot vienvirziena datu pārraides risinājumu – “Datu pārraides diodi”. Darba izstrādes gaitā tika iep…
Preliminary study about the efficiency of diode laser compared with retraction cords used for exposing the finishing lines of dental abutments before…
2016
Gingival displacement using diode laser or retraction cords: A comparative clinical study.
2018
PURPOSE: To compare two systems used for conditioning the gingival sulcus and exposing the finish line before the final impression for a fixed denture: retraction cords and diode laser. METHODS: All subjects participating in the study had healthy gingival and periodontal status before intervention for fixed prosthesis. 74 abutments for complete crown restoration were randomly divided into two groups for displacing the gingival sulcus before the final impression: gingival retraction cords (RC) and diode laser (DL). The height of the clinical crowns was measured by a blinded examiner in three points of the buccal surface (mesial, midline and distal) at four different times: after tooth prepar…
Integration of large-area optical imagers for biometric recognition and touch in displays
2021
In recent years there has been an increasing interest to integrate optical sensing in mobile displays, for instance, for biometric fingerprint scanning functionality. There are several routes to incorporate optical fingerprint functionality within the full display area, each with their own benefits and challenges. Here we investigate the different integration routes using large-area, ultra-thin imagers based on organic photodiodes.
Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
2020
The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region. Capacitance-voltage profiling with monochromatic illumination showed that in the InGaN underlayer (UL), the density of deep traps with optical threshold near 1.5 eV was much higher than in the QW and higher than for structures without InGaN. Irradiation with 5 MeV electrons strongly increased the concentration of these 1.5 eV traps in the QWs, with the increase more pronounced for samples witho…
Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
2019
Two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence of an underlayer (UL) consisting of an InAlN/GaN superlattice (SL) were examined. The InAlN-based ULs were previously shown to dramatically improve internal quantum efficiency of near-UV LEDs, via a decrease in the density of deep traps responsible for nonradiative recombination in the QW region. The main differences between samples with and without UL were (a) a higher compensation of Mg acceptors in the p-GaN:Mg contact layer of the sample without UL, which correlates with the presence of traps with an activation energy of 0.06 eV in the QW region, (b) the…
Optimal matching between optical rectennas and harvester circuits
2017
This paper deals with optimal coupling issues between rectennas and harvesting circuits. An optical rectenna consists of a nanoantenna usually coupled with an ultra-high speed rectifier. These devices aim to receive and convert solar and thermal radiation in a DC voltage, while a harvester circuit provides the energy to be stored. The rectenna impedance is influenced both by its structure and by the rectifying diode, the harvester circuit impedance has to be matched to optimize the power transfer. The purpose of this contribution is to discuss the best impedance conditions by taking into account the constraints that are due to the individual devices the conversion system consist of. Finally…