Search results for "Diode"
showing 9 items of 469 documents
Difensulfonu un benzofenonu atvasinājumu optiskie pētījumi 3. paaudzes organiskām gaismu emitējošām diodēm
2021
Darbā tika pētīti TADF difenilsulfonu un benzofenonu atvasinājumi ar karbazola grupām ar mērķi atrast potenciālu zilās gaismas emiteri. TADF efekta pierādīšanai tika izmantoti degazēti un nedegazēti šķīdinātāji, jo skābeklis mijiedarbojas ar ierosinātajiem tripleta stāvokļiem un būtiski samazina savienojumu emisijas. No dotajiem savienojumiem tika izveidoti OLED. Visefektīvākajiem savienojumiem tika veidotas viesu-saimnieka sistēmas ar mērķi uzlabot emisijas spējas. Par matricu tika izvēlēti divu veidu karbazolu atvasinājumi ar salīdzinoši augstiem tripletu līmeņiem. No sistēmām tikai izveidoti OLED, izmērītas to elektriskās un emisijas īpašības. Labākā zaļganās nokrāsas organiskās gaismas …
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
2017
Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved. peerReviewed
Responsivity measurements of SiC photodiodes
2014
We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV photodiodes (henceforth, named SiC8, SiC10, SiC20) employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm respectively [1] and based on the pinch-off surface effect.
Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes
2016
Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed. peerReviewed
Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
2018
Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current for individual ions, and show that the boundary between leakage current degradation and a single-event-burnout-like effect is a strong function of LET and reverse bias. TCAD simulations show high localized electric fields under the Schottky junction, and high temperatures generated directly under the Schottky contact, consistent with the hypothesis that the ion energy causes eutectic-like intermixture at the metal- semiconductor interface or localized melting of the silicon …
Eksperimentālas iekārtas izveide un testēšana fotodiodes voltampēru raksturlīknes spektrālās atkarības noteikšanai
2022
Darba mērķis ir novērtēt, vai no Latvijas Universitātes Cietvielu fizikas institūta laboratorijā atsevišķi pieejamām ierīcēm ir iespējams izveidot vienotu automatizētu mērīšanas iekārtu, kas būtu lietojama fotodiožu izejas signāla spektrālās atkarības noteikšanai. Pirmajā nodaļā ir veikta literatūras analīze par pusvadītājiem. Otrajā nodaļā ir secīgi aprakstīta automatizētās mērīšanas iekārtas izveide. Trešajā nodaļā tiek analizēti iegūtie rezultāti, veikta salīdzināšana ar teorētiskajiem datiem. Iegūtie rezultāti parāda, ka no Latvijas Universitātes Cietvielu fizikas institūta laboratorijā atsevišķi pieejamām ierīcēm ir iespējams izveidot vienotu automatizētu mērīšanas iekārtu fotodiožu iz…
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes
2020
The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 V to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating. peerReviewed
Simulation studies of electronic transport in a-Si:H thin film solar cells
2009
The thin film solar cells in Hydrogenated Amorphous Silicon (a-Si:H) are attractive for cheaper production and used in ultra low cost, high volume applications but have a relatively lower electronic performance. These limitations are mainly due to properties of the a-Si:H and relies on the production technique. In this study we investigate the physical mechanisms which are on the basis of the electronic transport and their relation with the technological processes. The transport-simulation computer program ATLAS (Silvaco) has been used to examine the role of the mid gap defect density in determining the performance of a-Si:H p-i-n homojunction solar cell.
The audiovisual translation of wordplay illustrated by the example of the Ecuadorian web series Enchufe.tv
2018
The ongoing internationalization of audiovisual media increases the need for new ways of overcoming linguistic barriers. In Germany, where the common technique has always been dubbing, subtitles are however becoming more and more popular. The present article will deal with the application possibilities of subtitles in audiovisual translation with reference to humoristic elements. The article will present two theoretical approaches to the translation of humour which will be then put into practice by using three sketches of the Ecuadorian web series Enchufe.tv as an example. All three sketches are based on wordplays, a manifestation of humour which is extremely difficult to reproduce in other…