6533b859fe1ef96bd12b7a73
RESEARCH PRODUCT
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
Arto JavanainenMarek TurowskiKenneth F. GallowayChristopher NicklawVéronique Ferlet-cavroisAlexandre BosserJean-marie LauensteinMichele MuschitielloFrancesco PintacudaRobert A. ReedRonal D. SchrimpfRobert A. WellerAri Virtanensubject
power semiconductor devicesmallintaminenpiiionitsilicon carbideschottky diodesmodelingdioditsäteilyion radiation effectsdescription
Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved. peerReviewed
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2017-01-01 |