0000000001044825

AUTHOR

Marek Turowski

showing 5 related works from this author

Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

2017

International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.

Nuclear and High Energy PhysicsMaterials scienceSchottky barrierschottky diodesmodelling (creation related to information)01 natural sciencesElectronic mailIonpower semiconductor devicesReverse leakage currentchemistry.chemical_compoundsilicon carbide0103 physical sciencesSilicon carbideElectrical and Electronic Engineering[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsDiode010302 applied physicsta114010308 nuclear & particles physicsbusiness.industrydiodesSchottky diodesiliconmodelingradiationNuclear Energy and EngineeringchemistryionsOptoelectronicsbusinession radiation effectsVoltageIEEE Transactions on Nuclear Science
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Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes

2016

Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.

Materials scienceSchottky barrierchemistry.chemical_elementSchottky diodes01 natural sciencesIonpower semiconductor devicesReverse leakage currentchemistry.chemical_compoundXenonsilicon carbide0103 physical sciencesSilicon carbidecurrent-voltage characteristicsDiode010302 applied physicsta114ta213010308 nuclear & particles physicsbusiness.industrySchottky diodeAngle of incidencemodelingchemistryOptoelectronicsbusinession radiation effects
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Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes

2018

Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation. Peer reviewed

mallintaminenMaterials sciencePOWER DIODESSchottky diodesSINGLE-EVENT BURNOUT114 Physical sciences01 natural sciencesIonpower semiconductor devicesBARRIER DIODESTHERMAL-DAMAGEchemistry.chemical_compoundMolecular dynamicspuolijohteetsilicon carbide0103 physical sciencesSilicon carbideIrradiationElectrical and Electronic EngineeringSafety Risk Reliability and Quality010302 applied physicsta114ta213ionit010308 nuclear & particles physicsbusiness.industryionisoiva säteilyINORGANIC INSULATORSSchottky diodemodelingHeavy ion irradiationIRRADIATIONElectronic Optical and Magnetic MaterialschemistryionsOptoelectronicsDegradation (geology)Heavy ionbusinession radiation effectsIEEE Transactions on Device and Materials Reliability
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Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

2017

Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved. peerReviewed

power semiconductor devicesmallintaminenpiiionitsilicon carbideschottky diodesmodelingdioditsäteilyion radiation effects
researchProduct

Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes

2018

Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation peerReviewed

mallintaminenpower semiconductor devicesionitsilicon carbidepuolijohteetionisoiva säteilySchottky diodesmodelingion radiation effects
researchProduct