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RESEARCH PRODUCT
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
Ronald D. SchrimpfFrancesco PintacudaMarek TurowskiAlexandre Louis BosserMichele MuschitielloC.j. NicklawRobert A. WellerKenneth F. GallowayVeronique Ferlet-cavroisRobert A. ReedAri VirtanenArto JavanainenJean-marie Lauensteinsubject
Nuclear and High Energy PhysicsMaterials scienceSchottky barrierschottky diodesmodelling (creation related to information)01 natural sciencesElectronic mailIonpower semiconductor devicesReverse leakage currentchemistry.chemical_compoundsilicon carbide0103 physical sciencesSilicon carbideElectrical and Electronic Engineering[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsDiode010302 applied physicsta114010308 nuclear & particles physicsbusiness.industrydiodesSchottky diodesiliconmodelingradiationNuclear Energy and EngineeringchemistryionsOptoelectronicsbusinession radiation effectsVoltagedescription
International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2017-08-01 | IEEE Transactions on Nuclear Science |