0000000001044829

AUTHOR

Alexandre Bosser

showing 2 related works from this author

Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

2017

Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved. peerReviewed

power semiconductor devicesmallintaminenpiiionitsilicon carbideschottky diodesmodelingdioditsäteilyion radiation effects
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Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory

2018

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed. peerReviewed

X-rayFRAMsäteilyfysiikkaSEFIkäyttömuistitsingle-event effectstatic testmuistit (tietotekniikka)heavy ionsingle-event upsetdynamic test
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