Search results for "diodit"

Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments

2019

A two-photon absorption technique is used to understand the mechanisms of single-event effects (SEEs) in silicon carbide power metal–oxide–field-effect transistors (MOSFETs) and power junction barrier Schottky diodes. The MOSFETs and diodes have similar structures enabling the identification of effects associated specifically with the parasitic bipolar structure that is present in the MOSFETs, but not the diodes. The collected charge in the diodes varies only with laser depth, whereas it varies with depth and lateral position in the MOSFETs. Optical simulations demonstrate that the variations in collected charge observed are from the semiconductor device structure and not from metal/passiva…

Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation

2022

The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. The results were comparable, although the data may indicate a marginally lower thresholds for the isotopic enriched devices at lower linear energy transfer (LET). Slightly higher reverse bias threshold values for leakage current degradation were also observed compared to previously published work.

Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

2020

Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highlylocalized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and singleevent burnout for both the MOSFETs and JBS diodes. peerReviewed

Energy conversion efficiency in betavoltaic cells based on the diamond Schottky diode with a thin drift layer

2020

The HPHT diamond Schottky diode was assembled as a Metal/Intrinsic/p-doped structure betavoltaic cell (BC) with a very thin (1 μm) drift layer and tested under 5–30 keV electron beam irradiation using a scanning electron microscope (SEM). The effect of the β-radiation energy and the backscattering of electrons on the energy conversion was studied. From the results obtained, it is shown that, the efficiency of the investigated BC increases from 1.01 to 3.75% with the decrease of β-particle energy from 30 to 5 keV due to an increase of the electron beam absorption in a thin drift layer. Maximum efficiency is achieved when the electron beam energy is close to the average β-decay energy of 3H. …

Superconducting spintronic tunnel diode

2022

Diodes are key elements for electronics, optics, and detection. Their evolution towards low dissipation electronics has seen the hybridization with superconductors and the realization of supercurrent diodes with zero resistance in only one direction. Here, we present the quasi-particle counterpart, a superconducting tunnel diode with zero conductance in only one direction. The direction-selective propagation of the charge has been obtained through the broken electron-hole symmetry induced by the spin selection of the ferromagnetic tunnel barrier: a EuS thin film separating a superconducting Al and a normal metal Cu layer. The Cu/EuS/Al tunnel junction achieves a large rectification (up to ∼…

Ohjattavan virtalähteen suunnittelu suuritehoiselle diodilaserille

2008

Diodilasertekniikan soveltuvuus hengityskaasuanalysaattorin kaasumittauksiin

2007

Ingalsuo, Petri DIODILASERTEKNIIKAN SOVELTUVUUS HENGITYSKAASUANALYSAATTORIN KAASUMITTAUKSIIN, Pro gradu -tutkielma Jyväskylän yliopisto, Liikuntabiologian laitos, 2007. Hengityskaasuanalysaattoreita käytetään kunto- ja kilpaurheilussa maksimaalisen hapenottokyvyn (VO2max) määrittämiseen. Hengityskaasujen analysoinnissa tarvittavien suureiden perusmittaukset ovat hapen (O2) ja hiilidioksidin (CO2) pitoisuuksien sekä hengitystilavuuden (VE) mittaukset. Markkinoilla nykyisin olevissa hengityskaasuanalysaattoreissa on käytössä useita erityyppisiä hapen (galvaaninen polttokenno, paramagneettinen anturi ja elektrokemiallinen kenno) ja hiilidioksidin (infrapuna anturi) mittausmenetelmiä. Hapen ja …

Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

2017

Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved. peerReviewed

Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes

2020

The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 V to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating. peerReviewed