6533b7d6fe1ef96bd1265c06
RESEARCH PRODUCT
Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
Ketil RoedDag Oistein EriksenBruno CeccaroliCorinna MartinellaArto JavanainenSergey ReshanovSilvia Massettisubject
Nuclear and High Energy Physicsionisoiva säteilySchottky diodesheavy ion irradiationleakage current degradationsingle event effectselektroniikkakomponentitsäteilyfysiikkaNuclear Energy and Engineeringsilicon carbidemonoisotopicpuolijohteetdioditElectrical and Electronic EngineeringDetectors and Experimental Techniquessingle event burnoutdescription
The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. The results were comparable, although the data may indicate a marginally lower thresholds for the isotopic enriched devices at lower linear energy transfer (LET). Slightly higher reverse bias threshold values for leakage current degradation were also observed compared to previously published work.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2022-07-01 |