Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

2017

International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.

Semi-Empirical Model for SEGR Prediction

2013

The underlying physical mechanisms in single event gate rupture (SEGR) are not known precisely. SEGR is expected to occur when the energy deposition due to a heavy ion strike exceeds a certain threshold simultaneously with sufficient electric field across the gate dielectric. Typically the energy deposition is described by using the linear energy transfer (LET) of the given ion. Previously the LET has been demonstrated not to describe the SEGR sufficiently. The work presented here introduces a semi-empirical model for the SEGR prediction based on statistical variations in the energy deposition which are described theoretically.

Accelerated Tests on Si and SiC Power Transistors with Thermal, Fast and Ultra-Fast Neutrons

2020

Neutron test campaigns on silicon (Si) and silicon carbide (SiC) power MOSFETs and IGBTs were conducted at the TRIGA (Training, Research, Isotopes, General Atomics) Mark II (Pavia, Italy) nuclear reactor and ChipIr-ISIS Neutron and Muon Source (Didcot, U.K.) facility. About 2000 power transistors made by STMicroelectronics were tested in all the experiments. Tests with thermal and fast neutrons (up to about 10 MeV) at the TRIGA Mark II reactor showed that single-event burnout (SEB) failures only occurred at voltages close to the rated drain-source voltage. Thermal neutrons did not induce SEB, nor degradation in the electrical parameters of the devices. SEB failures during testing at ChipIr …

Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance

2012

A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.

SEGR in SiO<inf>2</inf>-Si<inf>3</inf>N<inf>4</inf> stacks

2013

Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes

2016

Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.

Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests

2021

High temperature reverse-bias (HTRB), High temperature gate-bias (HTGB) tests and electrical DC characterization were performed on planar-SiC power MOSFETs which survived to accelerated neutron irradiation tests carried out at ChipIr-ISIS (Didcot, UK) facility, with terrestrial neutrons. The neutron test campaigns on the SiC power MOSFETs (manufactered by ST) were conducted on the same wafer lot devices by STMicroelectronics and Airbus, with different neutron tester systems. HTGB and HTRB tests, which characterise gate-oxide integrity and junction robustness, show no difference between the non irradiated devices and those which survived to the neutron irradiation tests, with neutron fluence…

Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence

2017

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence. peerReviewed

SEGR in SiO${}_2$–Si$_3$N$_4$ Stacks

2014

Abstract. This work presents experimental Single Event Gate Rupture (SEGR) data for Metal–Insulator–Semiconductor (MIS) devices, where the gate dielectrics are made of stacked SiO2–Si3N4 structures. A semi-empirical model for predicting the critical gate voltage in these structures under heavy-ion exposure is first proposed. Then interrelationship between SEGR cross- section and heavy-ion induced energy deposition probability in thin dielectric layers is discussed. Qualitative connection between the energy deposition in the dielectric and the SEGR is proposed. peerReviewed

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

2016

Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed. peerReviewed

The "Livio Scarsi" X-Ray Facility at University of Palermo for Device Testing

2015

In this work, we report on the characteristics of the Livio Scarsi X-ray facility at University of Palermo. The facility is able to produce low energy X rays, within the energy range of 0.1-60 keV, with fluence rates ranging from 105-108 photons/mm2 s. The laboratory is equipped with an innovative digital detection system, based on semiconductor detectors (Si and CdTe detectors), able to provide accurate and precise estimation of the fluence rate, the energy and the exposure of X rays, even at high counting rate conditions. Instrumentation for electrical characterization (DC-AC) of semiconductor devices, for both off-line and on-line (i.e. during the irradiation) measurements, is also avail…

Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

2017

Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved. peerReviewed