6533b7d8fe1ef96bd126a2f4
RESEARCH PRODUCT
Semi-Empirical Model for SEGR Prediction
Francesco PintacudaMikko RossiJukka JaatinenMarty R. ShaneyfeltArto JavanainenVeronique Ferlet-cavroisHeikki KettunenMichele MuschitielloJames R. SchwankAri Virtanensubject
Nuclear and High Energy PhysicsEngineeringWork (thermodynamics)ta114business.industryGate dielectricLinear energy transferMechanicsIonNuclear Energy and EngineeringElectric fieldDeposition (phase transition)Electrical and Electronic EngineeringbusinessEvent (particle physics)Energy (signal processing)Simulationdescription
The underlying physical mechanisms in single event gate rupture (SEGR) are not known precisely. SEGR is expected to occur when the energy deposition due to a heavy ion strike exceeds a certain threshold simultaneously with sufficient electric field across the gate dielectric. Typically the energy deposition is described by using the linear energy transfer (LET) of the given ion. Previously the LET has been demonstrated not to describe the SEGR sufficiently. The work presented here introduces a semi-empirical model for the SEGR prediction based on statistical variations in the energy deposition which are described theoretically.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2013-08-01 | IEEE Transactions on Nuclear Science |