Search results for "ELECTRONIC STRUCTURE"

showing 10 items of 722 documents

Unraveling materials Berry curvature and Chern numbers from real-time evolution of Bloch states

2019

Materials can be classified by the topological character of their electronic structure and, in this perspective, global attributes immune to local deformations have been discussed in terms of Berry curvature and Chern numbers. Except for instructional simple models, linear response theories have been ubiquitously employed in calculations of topological properties of real materials. Here we propose a completely different and versatile approach to get the topological characteristics of materials by calculating physical observables from the real-time evolving Bloch states: the cell-averaged current density reveals the anomalous velocities whose integration leads to the conductivity quantum. Re…

Berry curvatureFOS: Physical sciencesSpin Hall effectquantum spin Hall effect02 engineering and technologyElectronic structure01 natural sciencesQuantumSettore FIS/03 - Fisica Della MateriaTheoretical physicsQuantum spin Hall effectMesoscale and Nanoscale Physics (cond-mat.mes-hall)0103 physical sciencesTime-dependent density functional theory010306 general physicsSpin (physics)QuantumTopological insulatorPhysicstopological insulatorCondensed Matter - Materials ScienceMultidisciplinaryCondensed Matter - Mesoscale and Nanoscale PhysicsPhysicsTime evolutionMaterials Science (cond-mat.mtrl-sci)Observable021001 nanoscience & nanotechnologytime-dependent density functional theoryTopological insulatorPhysical SciencesBerry connection and curvature0210 nano-technology
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How far the substituent effects in disubstituted cyclohexa-1,3-diene derivatives differ from those in bicyclo[2.2.2]octane and benzene?

2018

Substituents effects in cyclic diene derivatives are studied using quantum chemical modeling and compared to the corresponding effects in aromatic (benzene) and fully saturated (bicyclo[2.2.2]octane) compounds. In particular, electronic properties of the fixed group Y in a series of 3- and 4-X-substituted cyclohexa-1,3-diene-Y derivatives (where Y = NO2, COOH, COO− OH, O−, NH2, and X = NMe2, NH2, OH, OMe, Me, H, F, Cl, CF3, CN, CHO, COMe, CONH2, COOH, NO2, NO) are examined using the B3LYP/6-311++G(d,p) method. For this purpose, quantum chemistry models of the substituent effect: cSAR (charge of the substituent active region) and SESE (substituent effect stabilization energy) as well as trad…

Bicyclic moleculeDienesubstituent effects010405 organic chemistrymolecular modelingSubstituent010402 general chemistryCondensed Matter PhysicsResonance (chemistry)electronic structure01 natural sciencesQuantum chemistryMedicinal chemistry0104 chemical scienceschemistry.chemical_compoundchemistrysubstituent effect stabilization energyMoietyPhysical and Theoretical ChemistryBenzenecharge of the substituent active regionOctaneStructural Chemistry
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Relativistic coupled cluster calculations of the electronic structure of KrH+, XeH+ and RnH+

2012

Potential energy curves of NgH+ cations (Ng = Kr, Xe, Rn) were obtained by using four-component relativistic CCSD(T) coupled cluster calculations. Dissociation energies, equilibrium bond lengths, electronic properties, such as dipole moments and electric field gradients at the nuclei, and the related spectroscopic parameters of the electronic ground state have been determined. The results obtained for KrH+ and XeH+ are in good agreement with available experimental data, while those for RnH+ have been determined for the first time at this level of theory.

Bond lengthDipoleCoupled clusterChemistryElectric fieldRelativistic effects Coupled cluster Protonated noble gasesElectronic structurePhysical and Theoretical ChemistryAtomic physicsGround statePotential energyDissociation (chemistry)Theoretical Chemistry Accounts
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AM1 prediction of the equilibrium geometry of Si60

1993

Abstract AM1 calculations have been carried out to determine the equilibrium geometry of Si 60 . The predicted I h geometry shows that bonds may be clearly identified as single (2.297 A) or aromatic (2.092 A). Several analogies and differences between Si 60 and C 60 are pointed out. Especially remarkable is the bigger size of the Si 60 cluster, which is predicted to have a radius 2 A larger than that of the C 60 cluster. Results are compared to other levels of theory.

Bond lengthSiliconChemistryComputational chemistryCluster (physics)General Physics and AstronomyMoleculeThermodynamicschemistry.chemical_elementElectronic structureRadiusPhysical and Theoretical ChemistryEquilibrium geometryChemical Physics Letters
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Analysis of the CIPSI/DCCI approach to characterize the HF AND F2 single bond

1990

Abstract The aim of the present work is to account for the main differential correlation contributions occurring during the bond breaking process of HF and F2 molecules in an accurate and inexpensive way. Starting from the dissociation-consistent configuration interaction (DCCI) scheme by Goddard and co-workers the corresponding contributions are evaluated within the framework reported by Malrieu and co-workers, namely configuration interaction by perturbation with multiconfigurational zeroth-order wavefunction selected by iterative process (CIPSI). In addition, the DCCI scheme has been improved by introducing the dispersion effects associated with the valence MOs adjacent to the bond. The …

Bond lengthValence (chemistry)Electronic correlationComputational chemistryChemistryGeneral Physics and AstronomySingle bondElectronic structurePhysical and Theoretical ChemistryConfiguration interactionWave functionMolecular physicsDiatomic moleculeChemical Physics
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Theoretical Characterization of the Electronic Structure of Poly(Heteroaromatic Vinylenes)

1990

Since the pioneering work of the mid-seventies, the number of organic π-conjugated polymers, that can be made highly conducting upon appropriate chemical treatment, has grown tremendously. Among the most studied of these compounds are those based on fivemembered heteroaromatic rings, such as polythiophene (PT) and polypyrrole (PPy). The attractiveness of these polymers, relative to polyacetylene (PA) and poly(p-phenylene) (PPP), is the high chemical and thermal stability they show.1

Bond lengthchemistry.chemical_classificationPolyacetylenechemistry.chemical_compoundMaterials sciencechemistryElectron affinityPolymer chemistryPolythiopheneThermal stabilityElectronic structurePolymerPolypyrrole
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Influence of Structural Isomerism on the Electronic Properties of Extended Phthalocyanines

1993

Abstract The electronic structure of isomeric naphthalocyanines (H2Nc) is investigated using the nonempirical valence effective Hamiltonian (VEH) technique. The way the outer benzene rings are annelated (linearly as in 2,3-H2Nc or angularly as in 1,2-H2Nc) is shown to determine very important changes in the electronic properties. While similar properties to those of phthalocyanine are calculated for 1,2-H2Nc, lower oxidation potentials and red-shifted optical absorptions are predicted for 2,3-H2Nc in agreement with experimental data. The isomerism resulting from the different relative positions of the angularly annelated benzene rings in 1,2-H2Nc is shown to have almost no effect on the ele…

Bond lengthchemistry.chemical_compoundValence (chemistry)Molecular geometrychemistryComputational chemistryPhthalocyanineStructural isomerPhysical chemistryMoleculeElectronic structureCondensed Matter PhysicsBenzeneMolecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals
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Effects of Carbon-sp3 Bridging on the Electronic Properties of Oligothiophenes

1999

Abstract The electronic properties of rigidified, carbon sp 3 -bridged bithiophenes and terthiophenes have been investigated using density functional theory calculations, sp 3 Bridging has no effect on the bandgap other than that associated to the planarization of the system. Rigidification significantly improves the ability of oligothiophenes as electron donors but diminishes their electron accepting capacity. Grafting of substituents at the sp 3 bridging carbon slightly modifies the electronic properties.

Bridging (networking)Materials scienceBand gapMechanical EngineeringMetals and AlloysElectronic structureElectronCondensed Matter PhysicsPhotochemistryElectronic Optical and Magnetic MaterialsMechanics of MaterialsComputational chemistryChemical-mechanical planarizationMaterials ChemistryDensity functional theoryElectronic propertiesSynthetic Metals
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Zinc-blende AlN and GaN under pressure: structural, electronic, elastic and piezoelectric properties

2004

In this paper we report a theoretical study of the structural, elastic, electronic and piezoelectric properties of zinc-blende AlN and GaN under the pressure effect. The study is focused on the first-principles all electron full-potential augmented plane wave plus local orbitals calculations within the density-functional theory. The results of bulk properties, including lattice constants, bulk modulus and derivatives and band structures are obtained and compared using both the local density approximation (LDA) and the generalized gradient approximation (GGA) for the exchange-correlation functional. We find that the GGA does not give a significant improvement over LDA. We also report calcula…

Bulk modulusCondensed matter physicsChemistryHydrostatic pressurePlane waveElectronic structureCondensed Matter PhysicsPiezoelectricityElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceLattice constantMaterials ChemistryElectrical and Electronic EngineeringLocal-density approximationElectronic band structureSemiconductor Science and Technology
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Characterization of theTiSiO4structure and its pressure-induced phase transformations: Density functional theory study

2009

Theoretical investigations concerning the possible titanium silicate polymorphs have been performed using density functional theory at B3LYP level. Total-energy calculations and geometry optimizations have been carried out for all phases involved. The following sequence of pressure-driven structural transitions has been found: ${\text{CrVO}}_{4}$-type, $Cmcm$ (in parenthesis the transition pressure), $\ensuremath{\rightarrow}$ zircon-type, $I{4}_{1}/amd$ (0.8 GPa), $\ensuremath{\rightarrow}$ scheelite-type, $I{4}_{1}/a$ (3.8 GPa). At higher pressure the last phase is found to be stable at least up to 25 GPa. The equation of state of the different polymorphs is also reported. We found that t…

Bulk modulusMaterials scienceEquation of state (cosmology)Phase (matter)ThermodynamicsOrthorhombic crystal systemDensity functional theoryDielectricElectronic structureCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsAmbient pressurePhysical Review B
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