Search results for "ELECTRONICS"
showing 10 items of 4340 documents
A new CdTe/ZnO columnar composite film for Eta-solar cells
2002
Abstract First results of CdTe deposition on ZnO films consisting of free standing single crystalline columns of several micrometers height and ∼100– 200 nm diameter are presented. The ZnO films have been obtained by electrochemical deposition on conductive glass. Morphology, structural and optical properties of the nanostructured columnar CdTe/ZnO composite films have been studied. The cadmium telluride ( 40 nm thick) deposited by vapor-phase epitaxy under dynamical vacuum is lining the ZnO columns as a continuous smooth thin film with conformal coverage. The polycrystalline CdTe layer is a mixture of cubic and hexagonal phases and is semiconductor with a direct band gap optical transition…
Memory effects in MOS devices based on Si quantum dots
2003
Silicon quantum dots have been deposited on top of a 3-nm tunnel oxide by Low Pressure Chemical Vapour Deposition (LPCVD) and coated with a 7-nm Chemical Vapour Deposited (CVD) oxide. This stack was then incorporated in Metal-Oxide-Semiconductor structure and used as floating gate of a memory cell. The presence of 3 nm of tunnel oxides allows the injection of the charge by direct tunnel (DT) using low voltages for both program and erase operations. The charge stored in the quantum dots is able to produce a well-detectable flat band shift in the capacitors or, equivalently, a threshold voltage shift in the transistors. Furthermore, due to the presence of SiO 2 between the grains, the lateral…
Programming options for nanocrystal MOS memories
2003
Nanocrystal memories represent a promising candidate for the scaling of FLASH memories. In these devices, the charge is not stored in a continuous floating gate but in a discontinuous layer composed by numerous discrete silicon quantum dots well separated one from the other.The nanocrystals of radius of few nanometers are realized by chemical vapor deposition (CVD) of silicon on the tunnel oxide of 2.8 nm of thickness. These islands have been coated with a control oxide of 7 nm formed by CVD and incorporated in Metal-Oxide-Semiconductor structure. The devices are programmed and erased by tunnelling using low voltages and fast times. In addition, the programming can be easily achieved also b…
Electrical Conduction in Carbon Nanotubes under Mechanical Deformations
2009
The enormous potential of carbon nanotubes (CNTs) as primary components in electronic devices and NEMS necessitates the understanding and predicting of the effects of mechanical deformation on electron transport in CNTs. In principle, detailed atomic/electronic calculations can provide both the deformed configuration and the resulting electrical transport behavior of the CNT. However, the computational expense of these simulations limits the size of the CNTs that can be studied with this technique and a direct analysis of CNTs of the dimension used in nano-electronic devices, particularly multi-wall CNTs (MWNTs), seems prohibitive at the present. Here a computationally effective mixed finit…
Dielectrophoretic alignment and electrical characterization of CuO nanowire-based systems
2021
Abstract Dielectrophoresis is used to assemble nanowires between metallic electrodes to form scalable functional interconnects. The dielectrophoresis parameters are investigated for semiconductor copper oxide (CuO) nanowires that are desirable for energy conversion and storage, gas sensors and nanoelectromechanical systems. Experimental yields of multiple- and single-nanowire interconnects are explored at dielectrophoresis frequencies from 500 Hz to 500 kHz. The electrical properties of nanowire-electrode physical contact interfaces formed by dielectrophoresis, metal deposition, and dry mechanical transfer are investigated. The electrical transport mechanism in these interconnects is determ…
Simulation of the electromechanical behavior of multiwall carbon nanotubes.
2009
The enormous potential of carbon nanotubes (CNTs) as primary components in electronic devices and NEMS necessitates the understanding and predicting of the effects of mechanical deformation on electron transport in CNTs. In principle, detailed atomic/electronic calculations can provide both the deformed configuration and the resulting electrical transport behavior of the CNT. However, the computational expense of these simulations limits the size of the CNTs that can be studied with this technique, and a direct analysis of CNTs of the dimension used in nanoelectronic devices seems prohibitive at the present. Here a computationally effective mixed finite element (FE)/tight-binding (TB) appro…
Ligand-Protected Gold Nanoclusters as Superatoms—Insights from Theory and Computations
2012
Abstract Gold clusters and nanoparticles, stabilized by various ligands, exhibit a rich array of interesting and important electronic, optical, chemical and catalytic properties. Many particles can now be synthesized by wet chemistry, and they can be handled as normal chemicals: stored, modified and functionalized for applications in medical therapy, biolabelling, sensing, nanoelectronics and catalysis. In recent years, understanding of the stability, surface chemistry and functionalization of these interesting building blocks of nano-matter has taken a quantum leap. This is facilitated by simultaneous breakthroughs in experimental and theoretical fronts concerning accurate structural deter…
Asymmetric nanopore rectification for ion pumping, electrical power generation, and information processing applications
2011
Single-track, asymmetric nanopores can currently be functionalised with a spatially inhomogeneous distribution of fixed charges and a variety of pore tip shapes. Optimising the asymmetric nanopore characteristics is crucial for practical applications in nanofluidics. We have addressed here this question for three cases based on different input/output chemical and electrical signals: (i) ion pumping up a concentration gradient by means of a periodic, time-dependent bias potential, (ii) information processing with a single nanopore acting as the nanofluidic diode of a logic gate, and (iii) electrical energy harvesting using a nanopore that separates two solutions of different salt concentrati…
Energy conversion from external fluctuating signals based on asymmetric nanopores
2015
Electrical transduction from fluctuating external signals is central to energy conversion based on nanoscale electrochemical devices and bioelectronics interfaces. We demonstrate theoretically and experimentally a significant energy transduction from white noise signals using the electrical rectification of asymmetric nanopores in polymeric membranes immersed in aqueous electrolyte solutions. Load capacitor voltages of the order of 1 V are obtained within times of the order of 1 min by means of nanofluidic diodes which convert zero time-average potentials of amplitudes of the order of 1 V into average net currents. We consider single-nanopore and multipore membranes to show that the convers…
Electrical network of nanofluidic diodes in electrolyte solutions: Connectivity and coupling to electronic elements
2016
[EN] We consider a nanopore network with simple connectivity, demonstrating a two-dimensional circuit (full-wave rectifier) with ensembles of conical pores acting as nanofluidic diodes. When the bridge nanopore network is fed with an input potential signal of fluctuating polarity, a fixed output polarity is obtained. The full-wave rectification characteristics are demonstrated with square, sinusoidal, and white noise input waveforms. The charging of a load capacitor located between the two legs of the bridge demonstrates that the nanofluidic network is effectively coupled to this electronic element. These results can be relevant for energy transduction and storage procedures with nanopores …