Search results for "ELECTRONICS"
showing 10 items of 4340 documents
Rank-order and morphological enhancement of image details with an optoelectronic processor.
2010
In all-optical processors, enhancement of image details is the result of high-pass filtering. We describe an optoelectronic processor in which detail enhancement results from the digitally calculated difference between an original input image and its low-pass filtered version. The low-pass filtering is realized through the rank-order median and the morphological opening and closing operations calculated by use of the optical convolver. It is shown that the normalized difference between the morphological white and black top hats enhances bright and dark image details analogously to the rank-order unsharp masking.
Large area strip edgeless detectors fabricated by plasma etching process
2007
This work presents the last results from large area edgeless detector, fabricated by Plasma Etching Process to reduce the conventional width of the terminating structure of position sensitive detectors to the detector rim.. A current terminating ring is used to decouple the electrical behavior of the surface from the sensitive volume within a few tens of micrometers. The detectors have been illuminated using an infrared laser and their surface scanned in order to understand their collection behavior at the cut edge. The detectors have very high efficiency up to the insensitive area which is located about 60 mum from the detector edge.
Radiation Tolerance Tests of Small-Sized CsI(Tl) Scintillators Coupled to Photodiodes
2009
Radiation tolerance of small-sized CsI (Tl) crystals coupled to silicon photodiodes was studied by using protons. Irradiations up to the fluence of 1012 protons/cm2 were used. Degradation of light output by less than 5% was achieved.
Electric field manipulation in Al/CdTe/Pt detectors under optical perturbations
2017
Abstract Al/CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopy, even though they suffer from polarization phenomena, which cause a progressive time degradation of the spectroscopic performance. In this work we investigated on the time dependence of the electric field of an Al/CdTe/Pt detector under optical perturbation by means of Pockels effect measurements. A tunable laser with wavelengths ranging within 700−1000 nm and a 940 nm light emitting diode (LED) were used. The measurements of both the electric field profile and the total current were used to better understand the effects of the optical perturbation on polarization phenomena. The results point ou…
Spatial Reconstruction Algorithm of DT Layer in Cryogenic Targets Using Optical Techniques
2007
The measurements of the solid DT layer, in terms of thickness and roughness, in the LMJ geometry (i.e. in a hohlraum) are not trivial. The DT layer measurements will be done using a Matsukov-Cassegrain telescope placed 39 cm away from the target. This telescope will be used to acquire shadowgraphy images on equators, and interferometric measurements on pole areas using optical coherence tomography (OCT). Optical coherence tomography allows determining the DT layer thickness on a few points, in the polar regions of the target. By scanning around the poles, several points can be acquired in order to calculate the roughness and the local shape of the DT layer at the pole. Both techniques were …
Detector-electrode for alpha spectrometry in water sample, numerical and early feasibility investigation toward thermocompression bonding assembly pr…
2020
International audience; This study focuses on the feasibility of a detector-electrode for direct alpha measurement in aqueous samples. Such a device could be made by adding a boron doped diamond electrode on top of a standard silicon detector, with bonding and insulating layers. The impact of these different layers has been investigated by Monte-Carlo simulation (MCNP6), to find a compromise between alpha detection of the silicon, electrode and shielding properties of the diamond. The assembly process involving thermocompression between both substrates was successfully achieved under a clean room conditions.
Anodic layers formed on steel in phosphate buffer solution
1986
In-situ gamma scattering and ex-situ conversion electron Mossbauer, and Auger spectroscopy were applied to investigate anodic layers on steel. Samples treated in the active potential range in phosphate buffer solution show a Fe(II)-phosphate deposit on the surface. After treatment in the passive potential region, only Fe3+was found to exist in the oxide layer. The passive layer does not consist of stoichiometric oxidic phases.
Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory
2018
International audience; This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.
Real time digital pulse processing for X-ray and gamma ray semiconductor detectors
2013
Abstract Digital pulse processing (DPP) systems, based on direct digitizing and processing of detector signals, have recently been favoured over analog electronics, ensuring higher flexibility, stability, lower dead time and better spectroscopic performance. In this work, we present the performance of a new real time DPP system for X-ray and gamma ray semiconductor detectors. The system is based on a commercial digitizer equipped with a custom DPP firmware, developed by our group, for on-line pulse height and shape analysis. X-ray and gamma ray spectra measurements with cadmium telluride (CdTe) and germanium (Ge) detectors highlight the excellent performance of the system both at low and hi…
Laser systems for on-line laser ion sources
2008
Since its initiation in the middle of the 1980s, the resonant ionization laser ion source has been established as a reliable and efficient on-line ion source for radioactive ion beams. In comparison to other on-line ion sources it comprises the advantages of high versatility for the elements to be ionized and of high selectivity and purity for the ion beam generated by resonant laser radiation. Dye laser systems have been the predominant and pioneering working horses for laser ion source applications up to recently, but the development of all-solid-state titanium:sapphire laser systems has nowadays initiated a significant evolution within this field. In this paper an overview of the ongoing…