Search results for "ELECTRONICS"
showing 10 items of 4340 documents
Optical properties of thin films of ZnO prepared by pulsed laser deposition
2004
In this paper we report on the structural features and optical properties of wurtzite ZnO films epitaxially grown on sapphire, fluorite and mica substrates by means of pulsed laser deposition (PLD). Post-deposition annealing results in a clear improvement of the film quality, reflected by the small width of the exciton-related lines in both the absorption and the photoluminescence spectra. Photoluminescence spectra revealed a multi-line structure which is identified in term of free excitons and excitons complexes with neutral donors and deep centers. The relative intensity of the PL lines mainly depends on the nature of the substrate used. Concerning optoelectronic applications it is especi…
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
2007
We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state- of- the- art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of ( 1 - 5) x 10(18) cm(-3) and a large Stokes shift (similar to 800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified …
On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition
2012
Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°Care presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectr…
Structural and optical properties of TiO2–Al2O3nanolaminates produced by atomic layer deposition
2015
Structural and optical properties of Al2O3/TiO2 nanolaminates fabricated by atomic layer deposition (ALD) were investigated. We performed Raman spectroscopy, transmission electron microscopy (TEM), X-Ray reflectivity (XRR), UV-Vis spectroscopy, and photoluminescence (PL) spectroscopy to characterize the Al2O3/TiO2 nanolaminates. The main structural and optical parameters of Al2O3/TiO2 nanolaminates were calculated. It was established that with decreasing of the layer thickness, the value of band gap energy increases due to the quantum size effect related to the reduction of the nanograins size. It was also shown that there is an interdiffusion layer at the Al2O3/TiO2 interface which plays a…
Photonic Crystals from Core-Shell Colloids with Incorporated Highly Fluorescent Quantum Dots
2005
We report the preparation of nanoscaled PS/PMMA core-shell spheres with highly fluorescent CdS/ZnS coated CdSe quantum dots (QDs) integrated in the core. Core-shell spheres of different diameters have been self-assembled to colloidal photonic crystals (PCs) with photonic stop bands located in the visible range of the electromagnetic spectrum. For the synthesis of the core, a modified miniemulsion polymerization has been used; the shell was prepared by a newly developed core-shell polymerization. The CdSe QDs embedded in the core were coated with the higher band gap semiconductor materials CdS and ZnS in a successive ion layer adsorption reaction (SILAR) keeping up the light-emitting propert…
Radiative and non-radiative losses by voltage-dependent in-situ photoluminescence in perovskite solar cell current-voltage curves
2020
Abstract The rapid development of perovskite solar cells has been based on improvements in materials and device architectures, yet further progress towards their theoretical limit will require a detailed study of the main physical processes determining the photovoltaic performance. Luminescence can be a key parameter for this purpose, as it directly assesses radiative recombination. We present steady-state absolute photoluminescence of an operating device at varying voltages as a tool to study the loss mechanisms in perovskite devices. The calibration to absolute photon numbers gives access to the variation of the relative radiative/non-radiative recombination weighted along the measured po…
Photoluminescence in ZnO:Co2+ (0.01%–5%) Nanoparticles, Nanowires, Thin Films, and Single Crystals as a Function of Pressure and Temperature: Explori…
2014
This work investigates the electronic structure and photoluminescence properties of Co2+-doped ZnO and their pressure and temperature dependences through high-resolution absorption and emission spe...
The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films
2009
Photoluminescence (PL) and time-resolved PL experiments as a function of the elaboration process are performed on Er-doped silicon-rich silicon oxide (SRO:Er) thin films grown under NH(3) atmosphere. These PL measurements of the Er(3+) emission at 1.54 microm under non-resonant pumping with the Er f-f transitions are obtained for different Er(3+) concentrations, ranging from 0.05 to 1.4 at.%, and various post-growth annealing temperatures of the layers. High resolution transmission electron microscopy (HRTEM) and energy-filtered TEM (EFTEM) analysis show a high density of Si nanostructures composed of amorphous and crystalline nanoclusters varying from 2.7 x 10(18) to 10(18) cm(-3) as a fun…
Modulation of the electronic properties of GaN films by surface acoustic waves
2003
We report on the interaction between photogenerated electron-hole pairs and surface acoustic waves (SAW) in GaN films grown on sapphire substrates. The spatial separation of photogenerated carriers by the piezoelectric field of the SAW is evidenced by the quenching of the photoluminescence (PL) intensity. The quenching levels in GaN are significantly smaller than those measured in GaAs under similar conditions. The latter is attributed to the lower exciton ionization efficiency and carrier separation probabilities mediated by the piezoelectric effect. The PL spectra also evidence energy shifts and broadenings of the electronic transitions, which are attributed to the band gap modulation by …
Spectral properties of AIN ceramics
1997
Spectral properties of oxygen-related defects are studied in AIN ceramics at room temperatures. Original results concerning the photoluminescence under ultraviolet irradiation are obtained; they include the excitation spectrum and irradiation dose effects. The ultraviolet light energy storage and its release under irradiation with visible or infrared light in the form of the photostimulated luminescence has been observed in AIN ceramics. The properties of the photostimulated luminescence such as creation, emission and stimulation spectra are reported. For the explanation of the experimental results the mechanism of the recombination luminescence involving the oxygen-related defect is propos…