6533b836fe1ef96bd12a138f
RESEARCH PRODUCT
On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition
A. Luna-lópezC. DomínguezA. A. González-fernándezRoberto S. Murphy-arteagaR. López-estopierA. MoralesCiro FalconyD. Berman-mendozaMariano Aceves-mijaressubject
PhotoluminescenceMaterials scienceArticle SubjectSiliconbusiness.industryOxidechemistry.chemical_elementChemical vapor depositionCathodelaw.inventionchemistry.chemical_compoundSemiconductorchemistrylawlcsh:Technology (General)lcsh:T1-995OptoelectronicsGeneral Materials ScienceLight emissionEmission spectrumbusinessdescription
Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°Care presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850 nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2012-01-01 | Journal of Nanomaterials |