0000000000398393
AUTHOR
Ciro Falcony
Cathodo- and Photo- Luminescence of Silicon Rich Oxide Films Obtained by LPCVD
Silicon technology dominates the electronics industry today, so it is highly desirable the development of silicon-based components compatible with silicon technology, allowing integration of electrical and optical components on a single chip. One promising approach to the development of a silicon based light emitter is Silicon Rich Oxide (SRO), also called offstoichiometric silicon oxide. The interest on the optical properties of this material has grown since it was demonstrated that SRO films subjected to high-temperature annealing exhibit efficient photoluminescence (PL) (Iacona et al., 2000; Shimizu-Iwayama et al., 1996).
On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition
Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°Care presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectr…