Search results for "ELECTRONICS"
showing 10 items of 4340 documents
Radiation effects in nitride read-only memories
2010
Abstract We report on the influence of different types of radiation on the nitride read-only memories (NROM®). The memory cells were irradiated by light ions (Boron), X-rays and γ-rays. Memory transistor parameters, such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulated radiation dose and compared to the as-programmed (-erased) devices parameters. Their time evolution was registered in the range from few hours up to 5 months after the irradiation. The NROM® cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (difference of threshold voltage in the programmed state and the read-out voltage level) remai…
TLM Nodes: A New Look at an Old Problem
2015
In this paper, an alternative perspective on the transmission line modeling (TLM) method concepts to unify previous work is presented. The procedure begins by discretizing Maxwell’s equations and proposing TLM equivalent models. Node voltage and mesh current definitions are provided in terms of link line contributions, compatible with stub currents and voltages. They allow obtaining an expression that relates incident and reflected pulses with no other condition required. With this unified approach, modeling of other situations is straightforward. 2-D cases, source implementation, and anisotropic media are described and numerically tested.
Spectral Measurement of Photon Emission from Individual Gold Nanoparticles Using Scanning Tunneling Microscopy
2016
The light emission spectra of individual Au nanoparticles induced by a scanning tunneling microscope (STM) have been investigated. Two-dimensional ensembles of tunnel-coupled Au particles were prepared by thermal evaporation onto a native oxide silicon wafer in ultrahigh vacuum (10 – 9 mbar). Our STM measurements show a single peak at photon energy 1.6 eV in the tunneling mode and two peaks at 2.2 eV (connected with the Mie plasmon) and 1.45 eV (a new peak which was not discussed in literature before) in the field emission mode.
A Methodology to Deduce the Microstructural Spatial Deformation of Polycrystalline Structures: Application to the Alloy 600
2009
Studying the corrosion of the alloy 600, under water pressure, is of high importance to understand the ageing process of pressurized water reactors. Today, the impact of the oxide growth on the mechanical properties of nickel alloys is a challenge. The surface analysis and the quantification of the local deformation are key factors to deduce the surface damage of the substrate produced by corrosion. Here, we introduce a new methodology to determine the deformation distribution of the alloy 600 by using polycrystalline samples. The method is based on nanopads disposed on the surface samples, which allow a mapping, at the microscopic scale, of the spatial deformation. We applied to the sample…
Multicolor photon emission from organic thin films on different substrates
2016
Abstract Thin films of 1-pentyl-2 / ,3 / -difluoro-3 /// -methyl-4 //// -octyl- p -quinquephenyl and 9,10-Bis (4-pentylphenylethynyl)antracene organic molecules were grown on optical glass, silicon and porous silicon substrates. First optical and luminescent properties of such hybrid composites are thoroughly studied using spectroscopic techniques. The strong decrease of aggregation in thin films of 1-pentyl-2 / ,3 / -difluoro-3 /// -methyl-4 //// -octyl- p -quinquephenyl on porous silicon was observed. The possibility of simultaneous red, green and blue tunable photon emission from organic film/porous silicon hybrid structure is demonstrated.
Stimulated luminescence of AlN ceramics induced by ultraviolet radiation
2001
Abstract Properties of thermally stimulated luminescence (TL) and optically stimulated luminescence (OSL) of the ceramic material AlN-Y 2 O 3 have been studied after exposure to ultraviolet radiation (UVR). The dosemeter material Al 2 O 3 : C has been used for comparative measurements. The spectral sensitivity of the samples has been studied and compared with spectral effectiveness of the UVR-induced biological processes. It has been shown that a very high yield and linear dose response characterise the UVR-induced TL from AlN-Y 2 O 3 . Although lower than the TL, the OSL signal from UV-exposed AlN-Y 2 O 3 is still higher than that of Al 2 O 3 : C in a broad spectral region. The possibilit…
Radiation induced luminescence processes in c-BN
2004
Abstract Spectral properties of cubic boron nitride have been studied using methods of photoluminescence (PL), X-ray excited luminescence (XL), thermoluminescence (TL) and optically stimulated luminescence. It is found that emission of cubic boron nitride is presented by 4 subbands, their relative yield is determined by the excitation type: blue, green (dominant) and red bands are observed in PL, ultraviolet, blue (dominant), green and red bands—in XL. Three thermal peaks are found in TL curves in the 0–700°C temperature range, their presence and intensity depend on radiation type used. A tentative correspondence between thermal peaks and emission bands is found.
Time-resolved optical absorption in YAlO3 crystals
2004
Abstract The present work is devoted to the investigation of transient absorption (TA) induced by a pulsed electron beam (E=250 keV ) in pure and doped YAlO3 (YAP) single crystals. The nature of centers responsible for TA is discussed.
Neutron-induced defects in optical fibers
2014
We present a study on 0.8 MeV neutron-induced defects up to fluences of 1017 n/cm2 in fluorine doped optical fibers by using electron paramagnetic resonance, optical absorption and confocal micro-luminescence techniques. Our results allow to address the microscopic mechanisms leading to the generation of Silica-related point-defects such as E', H(I), POR and NBOH Centers.
Origin of the visible absorption in radiation-resistant optical fibers
2013
In this work we investigated the point defects at the origin of the degradation of radiation-tolerant optical fibers used in the visible part of the spectrum for plasma diagnostics in radiation environments. For this aim, the effects of γ -ray irradiation up to the dose of 10 MGy(SiO2) and post-irradiation thermal annealing at 550◦C were studied for a Fluorinedoped fiber. An absorption peaking around 2 eV is mainly responsible for the measured radiation-induced losses, its origin being currently debated in the literature. On the basis of the unchanging shape of this band with the radiation dose, its correlation with the 1.9 eV photoluminescent band and the thermal treatment results we assig…