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RESEARCH PRODUCT

Radiation effects in nitride read-only memories

G. CannellaT. SchillaciFabio PrincipatoFelix PalumboF. CeliSebania LibertinoD. CorsoG. MuréM. LisianskyAntonio MarinoYakov RoizinS. LombardoS. Giarusso

subject

Radiation effectDEVICERadiationNitrideNONVOLATILE MEMORYmemorieX-raygamma-rayIrradiationElectrical and Electronic EngineeringSafety Risk Reliability and QualityNROMHEAVY-ION EXPOSURELeakage (electronics)business.industryChemistrySubthreshold conductionElectrical engineeringX-rayCondensed Matter PhysicsRadiation effectlight ionsAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsThreshold voltageCELLSOptoelectronicsbusiness

description

Abstract We report on the influence of different types of radiation on the nitride read-only memories (NROM®). The memory cells were irradiated by light ions (Boron), X-rays and γ-rays. Memory transistor parameters, such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulated radiation dose and compared to the as-programmed (-erased) devices parameters. Their time evolution was registered in the range from few hours up to 5 months after the irradiation. The NROM® cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (difference of threshold voltage in the programmed state and the read-out voltage level) remained after γ or X irradiation for absorbed doses exceeding 50 krad(Si) and 100 krad(Si), respectively. For Boron irradiation, the programmed devices remained stable up to the fluence of 10 11  ions/cm 2 (equivalent to 1 Mrad(Si) of TID tolerance).

yearjournalcountryeditionlanguage
2010-09-01Microelectronics Reliability
https://doi.org/10.1016/j.microrel.2010.07.068