Search results for "ELI"

showing 10 items of 31163 documents

High-Performance Flexible Magnetic Tunnel Junctions for Smart Miniaturized Instruments

2018

010302 applied physicsMaterials sciencebusiness.industryElectrical engineering02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter PhysicsSmart instruments01 natural sciencesFlexible electronicsTunnel magnetoresistanceReliability (semiconductor)0103 physical sciencesGeneral Materials Science0210 nano-technologybusinessAdvanced Engineering Materials
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Deformation of bubbles in silicon gel insulation under an alternating electric field

2019

The behavior of silicone gel under electrical stress plays a significant role in the reliability and durability of high voltage electronic power devices due to its widespread use for the insulation of IGBT modules and other components. The charges accumulation at the bubble boundaries leads to significant displacements due to the establishment of Coulombic forces and the high deformability of colloidal system. The main purpose of this work is to validate a numerical approach useful to investigate, for a given silicone gel, the non-linear relation between the applied HVDC stress and the electric field over an air bubble within the insulation bulk. The analysis has been carried out by means o…

010302 applied physicsMaterials scienceinsulationreliabilityDeformation (mechanics)020209 energyBubbleHigh voltage02 engineering and technologyDielectric01 natural sciencesSpace chargeIGBTSilicone gelStress (mechanics)chemistry.chemical_compoundpartial dischargeSettore ING-IND/31 - ElettrotecnicaSiliconechemistryElectric field0103 physical sciences0202 electrical engineering electronic engineering information engineeringComposite material
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State-space formulation of scalar Preisach hysteresis model for rapid computation in time domain

2015

A state-space formulation of classical scalar Preisach model (CSPM) of hysteresis is proposed. The introduced state dynamics and memory interface allow to use the state equation, which is rapid in calculation, instead of the original Preisach equation. The main benefit of the proposed modeling approach is the reduced computational effort which requires only a single integration over the instantaneous line segment in the Preisach plane. Numerical evaluations of the computation time and model accuracy are provided in comparison to the CSPM which is taken as a reference model.

010302 applied physicsMemory interfacePreisach model of hysteresis0209 industrial biotechnologyApplied MathematicsComputationScalar (mathematics)02 engineering and technologySystems and Control (eess.SY)01 natural sciences020901 industrial engineering & automationLine segmentControl theoryModeling and Simulation0103 physical sciencesFOS: Electrical engineering electronic engineering information engineeringApplied mathematicsComputer Science - Systems and ControlTime domainReference modelMathematics
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The Role of Right Interpretation of Space Charge Distribution for Optimized Design of HVDC Cables

2019

In the field of high-voltage transmission systems, different degradation phenomena affect the reliability of the employed components. In particular, under dc stress, the space charge accumulation phenomenon is believed to be the most responsible of the dielectrics lifetime reduction. To measure the accumulated space charges in flat specimens, the pulsed electro-acoustic (PEA) method is one of the most used techniques. The working principle of the PEA cell is based on the acoustic waves propagation and detection. As is well known, the acoustic waves propagating in different means are partially transmitted and partially reflected. Therefore, the piezoelectric sensor of the PEA cell is subject…

010302 applied physicsPhysicsField (physics)Piezoelectric sensorPEA method020208 electrical & electronic engineeringhigh-voltage direct-current (HVdc)Charge (physics)modeling02 engineering and technologyMechanicsAcoustic wave01 natural sciencesSpace chargeSignalFinite-difference time-domain (FDTD) methodIndustrial and Manufacturing EngineeringSettore ING-IND/31 - ElettrotecnicaControl and Systems Engineering0103 physical sciences0202 electrical engineering electronic engineering information engineeringReflection (physics)space chargeSurface chargeElectrical and Electronic Engineering
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A summary of expressions for central performance parameters of high efficiency solar cell concepts

2019

This work reviews expressions for central performance parameters of various types of PV-concepts when operating at the radiative limit. Some new expressions not published elsewhere are also included. The performance parameters include the short circuit current density, the open circuit voltage, the maximum power density and the optimal voltage. The cell concepts include single junction cells, cells optically coupled to up- and down-converters, intermediate band solar cells and a couple of implementations of multijunction devices. The Lambert W function is used to express the maximum power density.

010302 applied physicsPhysicsbusiness.industryOpen-circuit voltageSemiconductor device modeling02 engineering and technology021001 nanoscience & nanotechnologySolar energyTopology01 natural scienceslaw.inventionsymbols.namesakelawLambert W function0103 physical sciencesSolar cellsymbolsEnergy transformation0210 nano-technologybusinessShort circuitVoltage2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
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THE GYROTRON STARTUP SCENARIO IN THE SINGLE MODE TIME DEPENDENT APPROACH

2019

The paper explains how to solve the Gyrotron equation system in the Single Mode Time Dependent Approach. In particular, we point out problems encountered when solving these well-known equations. The starting current estimation approach a using time model is suggested. The solution has been implemented in the Matlab code, which is attached to the article.

010302 applied physicsPhysicstime dependent approachgyrotronNuclear engineeringSingle-mode optical fiberMatlab code01 natural sciences010305 fluids & plasmaslaw.inventiondifferential equationlawModeling and SimulationGyrotron0103 physical sciencesQA1-939MathematicsAnalysisMathematical Modelling and Analysis
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A Novel Fault-Tolerant Routing Algorithm for Mesh-of-Tree Based Network-on-Chips

2019

Use of bus architecture based communication with increasing processing elements in System-on-Chip (SoC) leads to severe degradation of performance and speed of the system. This bottleneck is overcome with the introduction of Network-on-Chips (NoCs). NoCs assist in communication between cores on a single chip using router based packet switching technique. Due to miniaturization, NoCs like every Integrated circuit is prone to different kinds of faults which can be transient, intermittent or permanent. A fault in any one component of such a crucial network can degrade performance leaving other components non-usable. This paper presents a novel Fault-Tolerant routing Algorithm for Mesh-of-Tree …

010302 applied physicsRouterNetwork packetbusiness.industryComputer scienceFault toleranceTopology (electrical circuits)Hardware_PERFORMANCEANDRELIABILITY02 engineering and technologyFault (power engineering)01 natural sciencesBottleneckPacket switching020204 information systems0103 physical sciencesHardware_INTEGRATEDCIRCUITS0202 electrical engineering electronic engineering information engineeringRouting (electronic design automation)businessComputer network
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Silicon dosimeters based on Floating Gate Sensor: design, implementation and characterization

2020

A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Rad…

010302 applied physicsSignal processingMaterials scienceDosimeterSettore ING-IND/20 - Misure E Strumentazione Nucleari010308 nuclear & particles physicsbusiness.industryAnalog-to-digital converterHardware_PERFORMANCEANDRELIABILITYFlash ADC01 natural sciencesPower (physics)law.inventionCMOSlawAnalog-to-Digital converter current-to-voltage interfaces Dosimeter edgeless transistors (ELT) Floating Gate MOS radiation hardening by design (RHBD) total ionizing dose (TID)Absorbed dose0103 physical sciencesHardware_INTEGRATEDCIRCUITSCalibrationOptoelectronicsbusiness2020 IEEE 20th Mediterranean Electrotechnical Conference ( MELECON)
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Determination of elastoplastic properties of TiO2 thin films deposited on dual phase stainless steel using nanoindentation tests

2010

International audience; In recent years, the extraction of mechanical behaviour of thin films by nanoindentation using sharp indenter geometry has been extensively studied. This work investigates the mechanical properties of TiO2 thin film (1 µm thickness) deposited by spin coating on dual phase Duplex stainless steel and glass substrates. Experiments are carried out with different sharp triangular pyramids (a Cube corner and a Berkovich indenter) using a commercial Nano Indenter® XP apparatus. The substrate effect has been counteracted and an inverse method proposed in literature for bulk material has been adapted to assess the elastoplastic parameters of the tested thin film directly from…

010302 applied physicsSpin coatingMaterials scienceThin filmsMetallurgy02 engineering and technologySurfaces and InterfacesGeneral ChemistrySubstrate (electronics)Inverse methodNanoindentation021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesFinite element methodNanoindentationSurfaces Coatings and FilmsPhase (matter)0103 physical sciencesNano-Materials ChemistryThin film0210 nano-technologyFinite element modelingElastic modulus
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Simplified feedback control system for scanning tunneling microscopy

2021

A Scanning Tunneling Microscope (STM) is one of the most important scanning probe tools available to study and manipulate matter at the nanoscale. In a STM, a tip is scanned on top of a surface with a separation of a few \AA. Often, the tunneling current between tip and sample is maintained constant by modifying the distance between the tip apex and the surface through a feedback mechanism acting on a piezoelectric transducer. This produces very detailed images of the electronic properties of the surface. The feedback mechanism is nearly always made using a digital processing circuit separate from the user computer. Here we discuss another approach, using a computer and data acquisition thr…

010302 applied physicsSuperconductivityPhysics - Instrumentation and DetectorsMaterials sciencebusiness.industrySerial communicationFOS: Physical sciencesWeyl semimetalPort (circuit theory)Instrumentation and Detectors (physics.ins-det)01 natural sciencesPiezoelectricityNoise (electronics)law.inventionCondensed Matter - Other Condensed MatterData acquisitionlawCondensed Matter::Superconductivity0103 physical sciencesOptoelectronicsScanning tunneling microscope010306 general physicsbusinessInstrumentationOther Condensed Matter (cond-mat.other)Review of Scientific Instruments
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