Search results for "ERT"
showing 10 items of 21537 documents
Revisionismo histórico y racismo en la jurisprudencia constitucional : los límites de la libertad de expresión (a propósito de la STC 235/2007)
2007
Después de plantear la contradicción existente en la jurisprudenciaconstitucional que, por una parte, admite el revisionismo histórico conel límite del respeto a la dignidad y, por otra parte, reconoce con lamáxima amplitud la libertad ideológica, se analiza la STC 235/2007que ha declarado inconstitucional el delito de negación del genocidioy, en cambio, ha considerado constitucional la penalización de la justificacióndel genocidio. Esta sentencia ha clarificado parcialmente lasituación del revisionismo histórico y, en general, de la difusión de ideascontrarias a la Constitución pero sigue existiendo aquella contradicción;no obstante, ha aportado elementos como la distinción entreideas y ac…
Hexakis(diethylacetamide)iron(II) hexahalorhenate(IV) ionic salts: X-ray structures and magnetic properties
2015
Two novel Fe<sup>II</sup>-Re<sup>IV</sup> compounds of general formula [Fe<sup>II</sup>(DEA)<inf>6</inf>][Re<sup>IV</sup>X<inf>6</inf>] where DEA = diethylacetamide and X = Cl (1) and Br (2) have been prepared and magnetostructurally characterised. Complexes 1 and 2 are isomorphic ionic salts that crystallise in the trigonal crystal system with space group R(-3). The rhenium(IV) ion in 1 and 2 is six-coordinate with six chloro (1) or bromo (2) ligands building a regular octahedral chromophore. The Fe<sup>II</sup> ion is also six-coordinate, and bonded to six oxygen atoms from six DEA molecules. [Fe<sup>…
Extensions and corona decompositions of low-dimensional intrinsic Lipschitz graphs in Heisenberg groups
2020
This note concerns low-dimensional intrinsic Lipschitz graphs, in the sense of Franchi, Serapioni, and Serra Cassano, in the Heisenberg group $\mathbb{H}^n$, $n\in \mathbb{N}$. For $1\leq k\leq n$, we show that every intrinsic $L$-Lipschitz graph over a subset of a $k$-dimensional horizontal subgroup $\mathbb{V}$ of $\mathbb{H}^n$ can be extended to an intrinsic $L'$-Lipschitz graph over the entire subgroup $\mathbb{V}$, where $L'$ depends only on $L$, $k$, and $n$. We further prove that $1$-dimensional intrinsic $1$-Lipschitz graphs in $\mathbb{H}^n$, $n\in \mathbb{N}$, admit corona decompositions by intrinsic Lipschitz graphs with smaller Lipschitz constants. This complements results that…
A singular (p,q)-equation with convection and a locally defined perturbation
2021
Abstract We consider a parametric Dirichlet problem driven by the ( p , q ) -Laplacian and a reaction which is gradient dependent (convection) and the competing effects of two more terms, one a parametric singular term and a locally defined perturbation. We show that for all small values of the parameter the problem has a positive smooth solution.
Linear Approximation Property, Minkowski Dimension, and Quasiconformal Spheres
1990
Vertical versus horizontal Sobolev spaces
2020
Let $\alpha \geq 0$, $1 < p < \infty$, and let $\mathbb{H}^{n}$ be the Heisenberg group. Folland in 1975 showed that if $f \colon \mathbb{H}^{n} \to \mathbb{R}$ is a function in the horizontal Sobolev space $S^{p}_{2\alpha}(\mathbb{H}^{n})$, then $\varphi f$ belongs to the Euclidean Sobolev space $S^{p}_{\alpha}(\mathbb{R}^{2n + 1})$ for any test function $\varphi$. In short, $S^{p}_{2\alpha}(\mathbb{H}^{n}) \subset S^{p}_{\alpha,\mathrm{loc}}(\mathbb{R}^{2n + 1})$. We show that the localisation can be omitted if one only cares for Sobolev regularity in the vertical direction: the horizontal Sobolev space $S_{2\alpha}^{p}(\mathbb{H}^{n})$ is continuously contained in the vertical Sobolev sp…
Adjacency matrices of random digraphs: singularity and anti-concentration
2017
Let ${\mathcal D}_{n,d}$ be the set of all $d$-regular directed graphs on $n$ vertices. Let $G$ be a graph chosen uniformly at random from ${\mathcal D}_{n,d}$ and $M$ be its adjacency matrix. We show that $M$ is invertible with probability at least $1-C\ln^{3} d/\sqrt{d}$ for $C\leq d\leq cn/\ln^2 n$, where $c, C$ are positive absolute constants. To this end, we establish a few properties of $d$-regular directed graphs. One of them, a Littlewood-Offord type anti-concentration property, is of independent interest. Let $J$ be a subset of vertices of $G$ with $|J|\approx n/d$. Let $\delta_i$ be the indicator of the event that the vertex $i$ is connected to $J$ and define $\delta = (\delta_1, …
Savaime sklindančios aukštatemperatūrinės sintezės būdu gautų aliuminio oksinitrido miltelių ir jų keramikų optinės savybės
2021
The reported study was funded by RFBR according to the Research Project No. 19-08-00655. V.P. acknowledges the State Research Program ‘Aug-stas enerģijas fizika un paātrinātāju tehnoloģijas’ (Projekta Nr. VPP-IZM-CERN-2020/1-0002). The Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the H2020-WIDESPREAD-01-2016-2017-Teaming Phase2 under Grant Agreement No. 739508, Project CAMART2.
Photoluminescence-Based Spatially Resolved Temperature Coefficient Maps of Silicon Wafers and Solar Cells
2020
In this article, we present a method to obtain implied open-circuit voltage images of silicon wafers and cells at different temperatures. The proposed method is then demonstrated by investigating the temperature coefficients of various regions across multicrystalline silicon wafers and cells from different heights of two bricks with different dislocation densities. Interestingly, both low and high temperature coefficients are found in dislocated regions on the wafers. A large spread of temperature coefficient is observed at regions with similar performance at 298 K. Reduced temperature sensitivity is found to be correlated with the increasing brick height and is exhibited by both wafers and…
A Novel Method for Characterizing Temperature Sensitivity of Silicon Wafers and Cells
2019
In this paper, we present a novel method to obtain temperature dependent lifetime and implied-open-circuit voltage (iV OC ) images of silicon wafers and solar cells. First, the method is validated by comparing the obtained values with global values acquired from lifetime measurements (for wafers) and current-voltage measurements (for cells). The method is then extended to acquire spatially resolved images of iV OC temperature coefficients of silicon wafers and cells. Potential applications of the proposed method are demonstrated by investigating the temperature coefficients of various regions across multi-crystalline silicon wafers and cells from different heights of two bricks with differe…