Search results for "EXCITATION"
showing 10 items of 1290 documents
Optical, Structural and Paramagnetic Properties of Eu-Doped Ternary Sulfides ALnS2 (A = Na, K, Rb; Ln = La, Gd, Lu, Y)
2015
Eu-doped ternary sulfides of general formula ALnS2 (A = Na, K, Rb; Ln = La, Gd, Lu, Y) are presented as a novel interesting material family which may find usage as X-ray phosphors or solid state white light emitting diode (LED) lighting. Samples were synthesized in the form of transparent crystalline hexagonal platelets by chemical reaction under the flow of hydrogen sulfide. Their physical properties were investigated by means of X-ray diffraction, time-resolved photoluminescence spectroscopy, electron paramagnetic resonance, and X-ray excited fluorescence. Corresponding characteristics, including absorption, radioluminescence, photoluminescence excitation and emission spectra, and decay k…
Radiative phonon-assisted and Auger recombination in Si nanocrystals
2010
Abstract Recent analysis of the literature shows that the photoluminescence (PL) of Si nanocrystals and porous silicon is caused by phonon-assisted exciton radiative recombination, as well as by direct radiative electron transfer from the second to the first conduction sub-band, which is related to the Auger recombination. The PL decay curve for porous silicon after excitation with ultraviolet laser pulse has been established experimentally. We have constructed continuity equations for the first and the second conduction sub-bands, including radiative phonon-assisted exciton recombination, Auger recombination and direct radiative transition from the second to the first conduction sub-band. …
The landscape of the excitation profiles of the αE and β emission bands in silica
1999
Abstract We report data about the relevance of the conformational heterogeneity in determining the optical properties of oxygen deficiency point defects in natural silica samples. The spectral profiles of the photoluminescence emissions at about 4.2 eV (α E band) and at about 3.15 eV (β band), and the efficiency of the intersystem-crossing mechanism connecting them appear modified by a fine tuning of the excitation energy within the B 2β absorption band. Moreover, the relative excitation optically spectra indicate the presence of optically distinguishable contributions to the emission profile. The reported data are attributed to a distribution of centers that maps into a spectral inhomogene…
The origin of the intrinsic 1.9 eV luminescence band in glassy SiO2
1994
Abstract The current controversy over the nature of the centers giving rise to the 1.9 eV photoluminescence (PL) band (the R-band), the suggested defect models and the relevant experimental data are briefly reviewed. The luminescence emission, excitation and polarization spectra of neutron-irradiated synthetic silica were studied between 6 and 300 K using site-selective dye-laser and Ar ion laser excitation. Resonant zero-phonon lines (ZPL) were observed below 80 K both in luminescence emission and excitation spectra in the 1.9–2.1 eV region. A vibration line in emission spectra 890 cm−1 below the ZPL energy is attributed to the symmetric stretching vibration of the silicon-non-bridging oxy…
Role of diffusing molecular hydrogen on relaxation processes in Ge-doped glass
2007
Temperature dependencies of steady-state and time-resolved photoluminescence (PL) from triplet state at 3.1 eV and singlet state at 4.2 eV ascribed to the twofold-coordinated Ge have been measured in unloaded and H2-loaded Ge-doped silica samples under 5.0 eV excitation in the 10–310 K range. Experimental evidences indicate that diffusing molecular hydrogen (H2) depopulates by a collisional mechanism the triplet state, decreasing both its lifetime of about 14% and the associated triplet PL intensity, whereas those of the singlet are insensitive to the presence of H2.
Structural inhomogeneity of Ge-doped amorphous SiO2 probed by photoluminescence lifetime measurements under synchrotron radiation.
2007
We report a study of the photoluminescence (PL) time decay of the B-type center, characterized by an optical absorption band peaked at similar to 5.2 eV and two related PL bands peaked at similar to 3.2 eV and similar to 4.3 eV, in sol-gel Ge-doped a- SiO2 under excitation by synchrotron radiation. Measurements were carried out by excitation in UV and in vacuum-UV (VUV), and were performed in the temperature range from 8 K up to 300 K in order to isolate the effects of the intersystem-crossing process, proposed to link the two emission bands of the center. Repeating the time decay measurement at several emission energies falling inside the 4.3 eV band, we have observed a variation of the PL…
Luminescence features of nonbridging oxygen hole centres in silica probed by site-selective excitation with tunable laser
2008
Time-resolved photoluminescence at 1.9 eV associated with the nonbridging oxygen hole centre (NBOHC) in silica was investigated under excitation with a ns pulsed laser system, tunable in the visible range. Mapping of the excitation/emission pattern evidences the site-selective excitation of the resonant zero phonon line (ZPL) transition due to its weak coupling with the stretching mode of dangling oxygen. Decay of ZPL follows an exponential law with lifetime of 15.3 μs, which provides a precise measure of the electronic transition probability of a single NBOHC.
Photoluminescence in silicon-doped n-indium selenide
1994
Photoluminescence results on silicon-doped indium selenide are reported. The effect of temperature and excitation intensity is studied. At low temperature, free and neutral donor bound exciton peaks are observed. Above 100 K only free exciton and band-to-band photoluminescence is detected. In order to give account of the full lineshape as a function of the absorption coefficient, the Urbach absorption tail of InSe is measured. Transmission and reflection photoluminescence spectra are also compared in order to study the effect of carrier diffusion. The shape of the photoluminescence spectrum can be accounted for through a direct gap model.
Type II narrow double barrier quantum well structures : Γ-X coupling and interface effects
1993
Photoluminescence (PL), PL excitation and time resolved PL experiments have been performed on Al0.42Ga0.58As/AlAs/GaAs symmetric double barrier quantum wells (DBQW) with only one or two AlAs monolayers constituting the intermediate barriers. In agreement with the envelope function predictions we show that such DBQW's undergo a type I - type II transition when the GaAs thickness is reduced below 7 and 5 monolayers for 2 and 1 AlAs molecular planes respectively. In type II configuration the PL decay time is found to be strongly dependent on the energy difference between AlAs Xz - and GaAs Γ - electron confined states and the coupling parameter of the Γ and Xz valleys can be deduced (4.2 meV o…
Luminescence of dense, octahedral structured crystalline silicon dioxide (stishovite)
2011
Abstract It is obtained that, as grown, non-irradiated stishovite single crystals possess a luminescence center. Three excimer pulsed lasers (KrF, 248 nm; ArF, 193 nm; F 2 , 157 nm) were used for photoluminescence (PL) excitation. Two PL bands were observed. One, in UV range with the maximum at 4.7±0.1 eV with FWHM equal to 0.95±0.1 eV, mainly is seen under ArF laser. Another, in blue range with the maximum at 3±0.2 eV with FWHM equal to 0.8±0.2 eV, is seen under all three lasers. The UV band main fast component of decay is with time constant τ =1.2±0.1 ns for the range of temperatures 16–150 K. The blue band decay possesses fast and slow components. The fast component of the blue band deca…