Search results for "Electrical Resistivity"
showing 10 items of 357 documents
Impedance spectroscopy studies of SrMnO3, BaMnO3and Ba0.5Sr0.5MnO3ceramics
2014
The impedance spectrum of hexagonal SrMnO3, rhombohedral BaMnO3 and orthorhombic Ba0.5Sr0.5MnO3 ceramics, synthesized by conventional high-temperature method, was studied in a wide temperature and frequency range. The complex impedance plots of Z″ versus Z′ pointed to two contributions originating from grains and grain boundaries. The parameters of electric equivalent circuit were calculated. The semicircles related to the grain boundary are located at the lower frequency side due to higher resistivity and capacity of the grain boundaries. The Ba0.5Sr0.5MnO3 ceramics is characterized by the lowest activation energy related to the grains. The conductivities σac of all the investigated sample…
Conductivity of the two-dimensional electron gas atLaAlO3/SrTiO3interface
2017
We propose an analytical theory of metallic conductivity in the two-dimensional (2D) ${\mathrm{LaAlO}}_{3}/{\mathrm{SrTiO}}_{3}$ (LAO/STO) interface. For that we consider the electron-phonon interaction at the interface. The electronic part is taken from our previous work [Phys. Chem. Chem. Phys. 18, 2104 (2016)], considering the conditions for the interfacial charge carrier (electron or hole) to become itinerant. The second ingredient deals with the atomic oscillations localized near the interface and decaying rapidly at its both sides, which can be regarded as 2D acoustic phonons. The dispersion of such phonons depends on the characteristics of phonon spectra of LAO and STO. Calculating t…
Structural characterization and anomalous Hall effect of Rh2MnGe thin films
2015
Abstract We present the preparation, structural investigations, and transport properties of L21-ordered epitaxial Rh2MnGe Heusler thin films grown by pulsed laser deposition. The films grow (1 0 0) oriented on (1 0 0)MgO substrate with [ 0 1 1 ] Rh 2 MnGe ∥ [ 0 1 0 ] MgO . The rocking curve widths of (4 0 0) reflections are below 1° and decrease with increasing deposition temperature. The flat surface of the thin films allowed lithographic patterning enabling quantitative magnetotransport measurements. We measured resistivity and the Hall effect. We suggest skew scattering as the dominant effect in the temperature dependent anomalous Hall effect, consistent with the theoretically expected s…
Finite range scattering of Ni and Zn impurities in Y-123 thin films
1997
Abstract We investigated YBa 2 (Cu 1− z M z ) 3 O 7-δ (M Ni,Zn) thin films and determined the decrease of T c and the increase of residual resistivity due to Cu-site substitution, taking into account the CuO-chain contributions to the total conductivity. Although Zn suppresses T c stronger than Ni by a factor of 2.3 the increase of resistivity differs only slightly. Furthermore the observed resistivities are too high to be explained within scattering from point-like defects. To reconcile these contradictions, we assumed finite size scattering potentials, which lead to scattering phase shifts δ l of higher angular momebtum l > 0. T c -suppression is discussed qalitatively within this picture.
Electrical Transport Properties of Lead−Free (Na0.5Bi0.5)1-xBaxZr0.04Ti0.96O3Ceramics (x = 0.06, 0.085, 0.1)
2011
Lead-free ceramics (Na0.5Bi0.5)1-xBaxZr0.04Ti0.96O3 were prepared by solid phase hot pressing sintering process. Density values of obtained samples are higher than 95% of the theoretical ones. Samples with x = 0.06, 0.085 and 0.1 were investigated in the present work. For these samples both ac and dc electric conductivity were studied. A low frequency (100 Hz-100 kHz) ac conductivity obeys the power law, characteristic for disordered materials. The dc conductivity has a thermally activated character. A barrier hopping model is found to explain the mechanism of charge transport in these materials. The (Na0.5Bi0.5)1-xBaxZr0.04Ti0.96O3 system is expected to be a new and promising candidate for…
Temperature-dependent resistivity and anomalous Hall effect in NiMnSb from first principles
2019
We present implementation of the alloy analogy model within fully relativistic density-functional theory with the coherent potential approximation for a treatment of nonzero temperatures. We calculate contributions of phonons and magnetic and chemical disorder to the temperature-dependent resistivity, anomalous Hall conductivity (AHC), and spin-resolved conductivity in ferromagnetic half-Heusler NiMnSb. Our electrical transport calculations with combined scattering effects agree well with experimental literature for Ni-rich NiMnSb with 1--2% Ni impurities on Mn sublattice. The calculated AHC is dominated by the Fermi surface term in the Kubo-Bastin formula. Moreover, the AHC as a function o…
Tailoring of the electrical and thermal properties using ultra-short period non-symmetric superlattices
2016
Thermoelectric modules based on half-Heusler compounds offer a cheap and clean way to create eco-friendly electrical energy from waste heat. Here we study the impact of the period composition on the electrical and thermal properties in non-symmetric superlattices, where the ratio of components varies according to (TiNiSn)���:(HfNiSn)���������, and 0 ��� n ��� 6 unit cells. The thermal conductivity (��) showed a strong dependence on the material content achieving a minimum value for n = 3, whereas the highest value of the figure of merit ZT was achieved for n = 4. The measured �� can be well modeled using non-symmetric strain relaxation applied to the model of the series of thermal resistanc…
Charge-carrier density collapse in and epitaxial thin films
2000
We measured the temperature dependence of the linear high field pH of La0.67Ca0.33MnO3 Tc = 232K) and La0.67Sr0.33MnO3 Tc = 345K) thin films in the temperature range from 4 K up to 360 K in magnetic fields up to 20 T. At low temperatures we find a charge-carrier density of 1.3 and 1.4 holes per unit cell for the Ca- and Sr-doped compound, respectively. In this temperature range electron-magnon scattering contributes to the longitudinal resistivity. At the ferromagnetic transition temperature Tc a dramatic drop in the number of charge-carriers n down to 0.6 holes per unit cell, accompanied by an increase in unit cell volume, is observed. Corrections of the Hall data due to a non saturated ma…
An analog electronic interface to measure electrical conductivity in liquids
2005
Abstract Measuring conductivity in aqueous solutions is a problem which is not easy to solve due to the differences in mass and mobility that exist between ions conduction and electrons. Additionally, it is necessary to keep in mind the interaction processes electrode-solution. As a consequence, the electrolytic conductivity cell has to be polarized with alternating voltage of adequate amplitude and frequency in order to extract the correct information. In this paper an electronic conditioning circuit is presented which converts electric conductivity into a value of continuous voltage. A hardware solution is proposed to do the conductivity temperature compensation. Experimental results obta…
Thermal conductivity of thermoelectric Al-substituted ZnO thin films
2013
ZnO:Al thin films with a low electrical resistivity were grown by magnetron sputtering on sapphire substrates. The cross-plane thermal conductivity (κ = 4.5 ± 1.3 W/mK) at room temperature is almost one order of magnitude lower than for bulk materials. The thermoelectric figure of merit ZT at elevated temperatures was estimated from in-plane power factor and the cross-plane thermal conductivity at room temperature. It is expected that the thermal conductivity drops with increasing temperature and is lower in-plane than cross-plane. Consequently, the thin film ZT is at least three times higher than for bulk samples at intermediate temperatures. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinh…