Search results for "Electrical resistance and conductance"

showing 10 items of 47 documents

Synthetic nanopores with fixed charges: An electrodiffusion model for ionic transport

2003

Synthetic nanopores with fixed charges exhibit ionic equilibrium and transport properties that resemble those displayed by biological ion channels. We present an electrodiffusion model based on the Nernst-Planck flux equations, which allows for a qualitative description of the steady state ionic transport through a nanopore when the membrane fixed charges and all mobile carriers (including the water ions) are properly taken into account. In particular, we study the current-voltage curve, the electrical conductance, the reversal potential (a measure of the nanopore ionic selectivity), as well as the flux inhibition by protons and divalent cations in the nanopore. The model clearly shows how …

Materials scienceDiffusionBiophysicsIonic bondingNanotechnologyBiophysical PhenomenaIonDiffusionQuantitative Biology::Subcellular ProcessesElectrical resistance and conductanceCationsIonizationIonsPhysics::Biological PhysicsQuantitative Biology::BiomoleculesModels StatisticalSteady stateDose-Response Relationship DrugElectric ConductivityBiological TransportHydrogen-Ion ConcentrationNanoporeMembraneModels ChemicalChemical physicsSaltsProtonsPhysical Review E
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Delamination Detection in Carbon Fibre Reinforced Composites Using Electrical Resistance Measurement

2016

In the present study 2-D numerical analysis of strip-type laminated composite specimens with and without damage is considered and numerical investigation is carried out by using a finite element method. The surface and oblique resistances are numerically calculated according to the two-probe and four-probe methods. The electrical conductivity of the composite laminate in the longitudinal direction is constant, while the electrical conductivity in the through-thickness direction is used as a variable in the parametric study. The resistance change due to delamination for each case is estimated by comparing the obtained resistance with the corresponding resistance of the specimen without delam…

Materials scienceElectrical resistance and conductanceElectrical resistivity and conductivityNumerical analysisComposite numberDelaminationOblique caseComposite materialFinite element methodParametric statisticsIOP Conference Series: Materials Science and Engineering
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Local Reinforcement Effect of a Strain Gauge Installation on Low Modulus Materials

2005

The reinforcement effect of electrical resistance strain gauges is well documented in the technical literature. In this paper the local reinforcement effect in tension is studied by using a simple theoretical model by considering a strain gauge mounted on a semi-infinite plate having the same width of the strain gauge and subjected to a uniaxial tension load. Neglecting the effect of the adhesive layer and considering the interface shear stress as an exponential distribution, the proposed model gives a closed-form solution. In detail, this model permits a simple formula to be obtained which allows the user to correct the local reinforcement effect provided that a proper calibration is perfo…

Materials scienceExponential distributionbusiness.industryTension (physics)Applied MathematicsMechanical EngineeringStructural engineeringElectrical resistance and conductanceMechanics of MaterialsModeling and SimulationShear stressCalibrationAdhesivebusinessReinforcementStrain gaugeThe Journal of Strain Analysis for Engineering Design
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Bottom-up realization and electrical characterization of a graphene-based device.

2016

We propose a bottom-up procedure to fabricate an easy-to-engineer graphene-based device, consisting of a microstrip-like circuit where few-layer graphene nanoplatelets are used to contact two copper electrodes. The graphene nanoplatelets are obtained by the microwave irradiation of intercalated graphite, i.e., an environmentally friendly, fast and low-cost procedure. The contact is created by a bottom-up process, driven by the application of a DC electrical field in the gap between the electrodes, yielding the formation of a graphene carpet. The electrical resistance of the device has been measured as a function of the gap length and device temperature. The possible use of this device as a …

Materials scienceFabricationNanotechnologyBioengineering02 engineering and technology01 natural scienceslaw.inventionbottom-upnanoelectronicsElectrical resistance and conductancegraphene devicelaw0103 physical sciencesGeneral Materials ScienceMechanics of MaterialGraphitegraphene device graphene nanoplatelets nanoelectronics bottom-upElectrical and Electronic EngineeringnanoelectronicGraphene oxide paper010302 applied physicsGrapheneMechanical EngineeringGraphene foamgraphene nanoplateletsChemistry (all)General Chemistry021001 nanoscience & nanotechnologygraphene nanoplateletMechanics of MaterialsElectrodeMaterials Science (all)0210 nano-technologyGraphene nanoribbonsNanotechnology
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Bending Sensors Based on Thin Films of Semitransparent Bithiophene-Fulleropyrrolidine Bisadducts

2020

In this study, a novel bithiophene‐fulleropyrrolidine bisadducts system (bis‐Th2PC 60 ) was synthesized and electropolymerized by chronoamperometry onto flexible ITO/PET substrates. The resulting semitransparent thin film was characterized by XPS, FT‐IR, cyclic voltammetry and optical techniques, confirming the good outcome of the electropolymerization process. AFM investigations permitted to highlight an inherent disordered granular morphology, in which the grain‐to‐grain separation depends upon the application of bending. The electrical resistance of the thin film was characterized as function of bending (in the range 0°‐90°), showing promising responsivity to low bending angles (10°‐30°)…

Materials scienceFullerenepiezoresistive sensors010405 organic chemistrySettore ING-INF/01General ChemistryBendingChronoamperometrybending010402 general chemistry01 natural sciencesPiezoresistive effect0104 chemical sciencesElectrical resistance and conductanceX-ray photoelectron spectroscopythin filmsthiophenesconjugated polymersCyclic voltammetryComposite materialThin filmBending conjugated polymers piezoresistive sensors thin films thiophenes
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A reliable procedure for the preparation of graphene-boron nitride superlattices as large area (cm x cm) films on arbitrary substrates or powders (gr…

2019

[EN] Herein, a reliable procedure for the preparation of graphene-boron nitride superlattices, either as films or powders, consisting of the pyrolysis at 900 degrees C of polystyrene embedded pre-formed boron nitride single sheets is reported. The procedure can serve to prepare large area films (cm x cm) of this superlattice on quartz, copper foil and ceramics. Selected area electron diffraction patterns at every location on the films show the occurrence of the graphene-boron nitride superlattice all over the film. The procedure can also be applied to the preparation of powdered samples on a gram scale. Comparison with other materials indicates that the superlattice appears spontaneously as…

Materials scienceGrapheneSuperlattice02 engineering and technologyNitride010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical scienceslaw.inventionchemistry.chemical_compoundQUIMICA ORGANICAchemistryElectrical resistance and conductancelawBoron nitridevisual_artvisual_art.visual_art_mediumGeneral Materials SciencePolystyreneCeramicComposite materialSelected area diffraction0210 nano-technology
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Geometrical dependence of domain wall propagation and nucleation fields in magnetic domain wall sensor devices

2017

We study the key domain wall properties in segmented nanowires loop-based structures used in domain wall based sensors. The two reasons for device failure, namely the distribution of domain wall propagation field (depinning) and the nucleation field are determined with Magneto-Optical Kerr Effect (MOKE) and Giant Magnetoresistance (GMR) measurements for thousands of elements to obtain significant statistics. Single layers of Ni$_{81}$Fe$_{19}$, a complete GMR stack with Co$_{90}$Fe$_{10}$/Ni$_{81}$Fe$_{19}$ as a free layer and a single layer of Co$_{90}$Fe$_{10}$ are deposited and industrially patterned to determine the influence of the shape anisotropy, the magnetocrystalline anisotropy an…

Materials scienceMagnetic domainNucleationGeneral Physics and AstronomyFOS: Physical sciencesField strength02 engineering and technologyApplied Physics (physics.app-ph)01 natural sciencesElectrical resistance and conductance0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)010302 applied physicsCondensed Matter - Materials ScienceCondensed Matter - Mesoscale and Nanoscale Physicsbusiness.industryMaterials Science (cond-mat.mtrl-sci)Physics - Applied Physics021001 nanoscience & nanotechnologyMagnetic fieldPower (physics)Domain wall (magnetism)OptoelectronicsDevelopment (differential geometry)0210 nano-technologybusiness
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Strain Measurement on Composites: Errors due to Rosette Misalignment

2002

Electrical resistance strain gauges are increasingly used for the determination of the strain field in composite components. The effect of the angular misalignment of a strain gauge rosette on the determination of the strains in a composite material is investigated in this paper. The theoretical analysis shows that the strain error along the principal material directions depends on the difference of principal strains, on the angular misalignment of the rosette and on the angle between the maximum principal strain and the fibre direction. The paper also shows experimental evidence for the theoretical analysis.

Materials scienceObservational errorStrain (chemistry)Field (physics)Mechanical EngineeringComposite numberlaw.inventionRosette (botany)Electrical resistance and conductanceMechanics of MaterialslawResistorComposite materialStrain gaugeStrain
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Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors

2012

We report a systematic study of time-resolved and power-dependent photoresponse in high-efficiency germanium quantum dot photodetectors (Ge-QD PDs), with internal quantum efficiencies greater than 100 over a broad wavelength, reverse bias, and incident power range. Turn-on and turn-off response times (τ on and τ off) are shown to depend on series resistance, bias, optical power, and thickness (W QD) of the Ge-QD layer, with measured τ off values down to ∼40 ns. Two different photoconduction regimes are observed at low and high reverse bias, with a transition around -3 V. A transient current overshoot phenomenon is also observed, which depends on bias and illumination power. © 2012 American …

Materials sciencePhotoresponseReverse biaGeneral Physics and Astronomychemistry.chemical_elementPhotodetectorGermaniumOptical powerPhotoconductionTime-resolvedSettore ING-INF/01 - ElettronicaSeries resistanceOpticsElectrical resistance and conductancePhotodetectorOptical powerEquivalent series resistanceSystematic studybusiness.industryPhotoconductivityInternal quantum efficiencyQuantum-dot photodetectorPhotonWavelengthSemiconductor quantum dots GermaniumchemistryQuantum dotTransient current Electric resistanceOptoelectronicsIncident powerbusiness
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Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices

2018

The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (∼0.1 V), that are those at which t…

Materials sciencePhysics and Astronomy (miscellaneous)MagnetoresistanceSpintronicsCondensed matter physicsVALVESSpin valve02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesSpace chargePoole–Frenkel effectTRANSPORTOrganic semiconductorINTERFACESPIN INJECTIONElectrical resistance and conductanceElectrical resistivity and conductivity0103 physical sciencesMAGNETORESISTANCEHETEROJUNCTIONfilms010306 general physics0210 nano-technologyTEMPERATURE
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