Search results for "Electrical resistivity and conductivity"
showing 10 items of 317 documents
Electronic correlation effects and the Coulomb gap at finite temperature.
2000
We have investigated the effect of the long-range Coulomb interaction on the one-particle excitation spectrum of n-type Germanium, using tunneling spectroscopy on mechanically controllable break junctions. The tunnel conductance was measured as a function of energy and temperature. At low temperatures, the spectra reveal a minimum at zero bias voltage due to the Coulomb gap. In the temperature range above 1 K the Coulomb gap is filled by thermal excitations. This behavior is reflected in the temperature dependence of the variable-range hopping resitivity measured on the same samples: Up to a few degrees Kelvin the Efros-Shkovskii ln$R \propto T^{-1/2}$ law is obeyed, whereas at higher tempe…
Infinite single-particle bandwidth of a Mott–Hubbard insulator
2016
The conventional viewpoint of the strongly correlated electron metal-insulator transition is that a single band splits into two upper and lower Hubbard bands at the transition. Much work has investigated whether this transition is continuous or discontinuous. Here we focus on another aspect and ask the question of whether there are additional upper and lower Hubbard bands, which stretch all the way out to infinity — leading to an infinite single-particle bandwidth (or spectral range) for the Mott insulator. While we are not able to provide a rigorous proof of this result, we use exact diagonalization studies on small clusters to motivate the existence of these additional bands, and we discu…
Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon
2004
Abstract We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kΩ cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiated with 10 MeV protons. The 1-MeV neutron equivalent irradiation doses were 1.6×1014 and 8.5×1013 cm−2 for detectors, and up to 5.0×1014 cm−3 for test diodes. After irradiations, depletion voltages and leakage currents were measured. Czochralski silicon devices proved to be significantly more radiation hard than the reference devices made on traditional detector materials.
Particle detectors made of high-resistivity Czochralski silicon
2005
We have processed pin-diodes and strip detectors on n- and p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900 O cm and 1.9 kO cm for n- and p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit fabrication. This is optimal for semiconductor fabrication as well as for radiation hardness. The radiation hardness of devices has been investigated with several irradiation campaigns including low- and high-energy protons, neutrons, g-rays, lithium ions and electrons. Cz-Si was found to be more…
Small-polaron transport inLa0.67Ca0.33MnO3thin films
1998
We present a detailed study of the activated resistivity of ${\mathrm{La}}_{0.67}{\mathrm{Ca}}_{0.33}{\mathrm{MnO}}_{3}$ films up to 600 K under the influence of high magnetic fields. Data in zero field can be explained by small polaron hopping as treated in the Friedman-Holstein theory. Based on the spin orientation of ferromagnetic clusters in a magnetic field, we develop a phenomenological model describing the temperature and field dependence of the resistivity with a minimum of free parameters. We find that the polarons have a magnetic contribution to their activation energy for hopping which depends on the variation of the spin order with increasing temperature and can be modified by a…
Transfer coefficients for evaporation of a system with a Lennard-Jones long-range spline potential
2007
International audience; Surface transfer coefficients are determined by nonequilibrium molecular dynamics simulations for a Lennard-Jones fluid with a long-range spline potential. In earlier work A. Røsjorde et al., J. Colloid Interface Sci. 240, 355 2001; J. Xu et al., ibid. 299, 452 2006, using a short-range Lennard-Jones spline potential, it was found that the resistivity coefficients to heat and mass transfer agreed rather well with the values predicted by kinetic theory. For the long-range Lennard-Jones spline potential considered in this paper we find significant discrepancies from the values predicted by kinetic theory. In particular the coupling coefficient, and as a consequence the…
Violation of the Wiedemann-Franz Law in HF Metals
2014
Experimental observations of the much-studied compounds CeCoIn\(_5\) and YbRh\(_2\)Si\(_2\) at vanishing temperatures carefully probe the nature of their magnetic-field-tuned QCPs. The violation of Wiedemann-Franz (WF) law, along with jumps revealed both in the residual resistivity \(\rho _0\) and the Hall resistivity \(R_H\), provide vital clues to the origin of their non-Fermi-liquid behavior. The empirical facts point unambiguously to association of the observed QCP with FC forming flat bands.
Pressure-induced magnetic collapse and metallization of TlFe1.6Se2
2017
The crystal structure, magnetic ordering, and electrical resistivity of $\mathrm{TlF}{\mathrm{e}}_{1.6}\mathrm{S}{\mathrm{e}}_{2}$ were studied at high pressures. Below $\ensuremath{\sim}7\phantom{\rule{0.16em}{0ex}}\mathrm{GPa}$, $\mathrm{TlF}{\mathrm{e}}_{1.6}\mathrm{S}{\mathrm{e}}_{2}$ is an antiferromagnetically ordered semiconductor with a $\mathrm{ThC}{\mathrm{r}}_{2}\mathrm{S}{\mathrm{i}}_{2}$-type structure. The insulator-to-metal transformation observed at a pressure of $\ensuremath{\sim}7\phantom{\rule{0.16em}{0ex}}\mathrm{GPa}$ is accompanied by a loss of magnetic ordering and an isostructural phase transition. In the pressure range $\ensuremath{\sim}7.5\text{--}11\phantom{\rule{…
The influence of topological phase transition on the superfluid density of overdoped copper oxides
2017
We show that a topological quantum phase transition, generating flat bands and altering Fermi surface topology, is a primary reason for the exotic behavior of the overdoped high-temperature superconductors represented by $\rm La_{2-x}Sr_xCuO_4$, whose superconductivity features differ from what is described by the classical Bardeen-Cooper-Schrieffer theory [J.I. Bo\^zovi\'c, X. He, J. Wu, and A. T. Bollinger, Nature 536, 309 (2016)]. We demonstrate that 1) at temperature $T=0$, the superfluid density $n_s$ turns out to be considerably smaller than the total electron density; 2) the critical temperature $T_c$ is controlled by $n_s$ rather than by doping, and is a linear function of the $n_s$…
Soil ionization in earth electrodes by a finite difference time domain scheme
2004
This paper proposes a finite difference time domain numerical scheme devoted to analyze the transient behavior of earth electrodes during the soil breakdown that can take place when a surge current has to be drained. To this aim, Maxwell's equations together with a space-time variable resistivity function are used. The model has been validated by comparing the computed results with data available in the technical literature. Simulation results related to complex earth electrodes of limited extension are reported. Electrodes of larger extension can be easily simulated but requiring more computational resources.