Search results for "Electronic circuit"
showing 10 items of 125 documents
Circuit simulators for circuit analysis in graduate engineering courses
2018
Circuit simulators are extensively used as an aid in many courses at the graduate level in many different engineering and applied sciences programs. SPICE (Simulation Program with Integrated Circuits Emphasis) based software programs have been used for long due to their traditional market position. If we focus on circuits analysis and linear systems subjects, the features that are required from a given simulator can be found in student/limited versions of commercial EDA (Electronic Design Automation) suites or in freeware/open source codes. In this contribution, we analyse and compare the most revelant characteristics of a representative set of the software packages that are commonly adopte…
Numerical Simulation of Thermal Effects in Coupled Optoelectronic Device-circuit Systems
2008
The control of thermal effects becomes more and more important in modern semiconductor circuits like in the simplified CMOS transceiver representation described by U. Feldmann in the above article Numerical simulation of multiscale models for radio frequency circuits in the time domain. The standard approach for modeling integrated circuits is to replace the semiconductor devices by equivalent circuits consisting of basic elements and resulting in so-called compact models. Parasitic thermal effects, however, require a very large number of basic elements and a careful adjustment of the resulting large number of parameters in order to achieve the needed accuracy.
Patterning and tuning of electrical and optical properties of graphene by laser induced two-photon oxidation
2015
Graphene, being an ultrathin, durable, flexible, transparent material with superior conductivity and unusual optical properties, promises many novel applications in electronics, photonics and optoelectronics. For applications in electronics, patterning and modification of electrical properties is very desirable since pristine graphene has no band gap. Here we demonstrate a simple all-optical patterning method for graphene, based on laser induced two-photon oxidation. By tuning the intensity of irradiation and the number of pulses the level of oxidation can be controlled to high precision and, therefore, a band gap can be introduced and electrical and optical properties can be continuously t…
Numerical Simulation of Thermal Effects in Electric Circuits via Energy Transport equations
2006
In this work we present the coupling of stationary energy-transport (ET) equations with Modified Nodal Analysis (MNA)-equations to model electric circuits containing semiconductor devices. The one-dimensional ET-equations are discretised in space by an exponential fitting mixed hybrid finite element approach to ensure current continuity and positivity of charge carriers. The discretised ET-equations are coupled to MNA-equations and the resulting system is solved with backwarddifference formulas. Numerical examples are shown for a test circuit containing a pn-diode, and the results are compared to those achieved using the drift-diffusion model to describe the semiconductor devices in the cir…
Synchronization of coupled single-electron circuits based on nanoparticles and tunneling junctions
2009
We explore theoretically the synchronization properties of a device composed of coupled single-electron circuits whose building blocks are nanoparticles interconnected with tunneling junctions. Elementary nanoscillators can be achieved by a single-electron tunneling cell where the relaxation oscillation is induced by the tunneling. We develop a model to describe the synchronization of the nanoscillators and present sample calculations to demonstrate that the idea is feasible and could readily find applications. Instead of considering a particular system, we analyze the general properties of the device making use of an ideal model that emphasizes the essential characteristics of the concept.…
Circuit proposals for high-voltage latching current limiters
2019
This work discusses some ideas to adapt existing low voltage Latching Current Limiter (LCL) circuits to high voltage operation to provide a basis for future designs. Component selection, driver and ancillary power supply are key issues discussed which eventually provides a high-voltage LCL proposal. Experimental validation of two different prototypes (380Vdc and 1kVdc) is included as well as some digital techniques to enhance LCL capabilities.
Mixed-type circuits with distributed and lumped parameters as correct models for integrated structures
1991
The technology of integrated circuits imposes upon their designers the need to deal with structures with distributed parameters. Figure 4.1 shows a schematic diagram of part of a digital integrated chip, consisting of an n MOS transistor with gate (G), drain (D) and source (S) as terminals, and its thin-film connection with the rest of the chip. This on-chip connection can be made by metals (Al, W), polycristaline silicon (polysilicon) or metal suicides (WSi 2 ). Alternative materials to oxide-passivated silicon substrates are saphire and gallium arsenide (Saraswat and Mohammadi [1982], Yuan et al. [1982], Passlack et al. [1990]).
ℓp-solutions of countable infinite systems of equations and applications to electrical circuits
1991
In the preceding chapter we have studied a lumped parameter model of a class of circuits containing a finite number of elements. Here we are interested in qualitative properties of the network in Figure 3.1.
A Low-Power Fully-Mosfet Voltage Reference Generator for 90 nm CMOS Technology
2006
An integrated voltage reference generator, designed for being incorporated in standard 90-nm CMOS technology flash memories, is described in this paper. A fully MOSFET based approach, using also subthreshold operated devices, has been adopted in order to achieve low-voltage and low-power requirements and to overcome the difficulties of conventional band-gap reference circuits. The proposed circuit, based on current signals, internally generates two currents with opposite dependence on temperature. The two currents are added, thus canceling almost completely temperature dependence, and then linearly converted into the output voltage. For a temperature variation between -20degC and 90degC, th…
Memory irradiation measurements for the European SMART-1 spacecraft
2005
Three different types of memory circuits, that are intended to be used on board of the European satellite SMART-1, have been radiation hardness tested according to ESA's specification. Since the satellite is equipped with an electric propulsion engine, the spacecraft will be exposed to radiation during a long time when passing the radiation belt of the Earth. A standard DRAM circuit from SAMSUNG will serve as building block of the mass memory of SMART-1, and has been tested for total dose and proton induced single event upset (SEU). The DRAM memory showed surprisingly good resistance against radiation. The proton SEU cross sections for the radiation tolerant SRAM and FIFO circuits have also…