6533b855fe1ef96bd12b002f

RESEARCH PRODUCT

Memory irradiation measurements for the European SMART-1 spacecraft

S. WallinG. DajkoG. SzékelyAndrás FenyvesiD NovákA. MatilainenLars-olov NorlinJozsef MolnarAri VirtanenAndras KerekL. Granholm

subject

EngineeringHardware_MEMORYSTRUCTURESSpacecraftFIFO (computing and electronics)business.industryElectrical engineeringHardware_PERFORMANCEANDRELIABILITYElectrically powered spacecraft propulsionSingle event upsetStatic random-access memorybusinessRadiation hardeningDramElectronic circuit

description

Three different types of memory circuits, that are intended to be used on board of the European satellite SMART-1, have been radiation hardness tested according to ESA's specification. Since the satellite is equipped with an electric propulsion engine, the spacecraft will be exposed to radiation during a long time when passing the radiation belt of the Earth. A standard DRAM circuit from SAMSUNG will serve as building block of the mass memory of SMART-1, and has been tested for total dose and proton induced single event upset (SEU). The DRAM memory showed surprisingly good resistance against radiation. The proton SEU cross sections for the radiation tolerant SRAM and FIFO circuits have also been measured and the results are within the requirements for SMART-1.

yearjournalcountryeditionlanguage
2005-08-24RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605)
https://doi.org/10.1109/radecs.2001.1159320