Search results for "Electronic"

showing 10 items of 17076 documents

Power efficiency improvements with the radio frequency H− ion source

2016

CW 13.56 MHz radio frequency-driven H(-) ion source is under development at the University of Jyväskylä for replacing an existing filament-driven ion source at the MCC30/15 cyclotron. Previously, production of 1 mA H(-) beam, which is the target intensity of the ion source, has been reported at 3 kW of RF power. The original ion source front plate with an adjustable electromagnet based filter field has been replaced with a new front plate with permanent magnet filter field. The new structure is more open and enables a higher flux of ro-vibrationally excited molecules towards the plasma electrode and provides a better control of the potential near the extraction due to a stronger separation …

010302 applied physicsMaterials scienceta114ta213Electromagnetbusiness.industryRF power amplifierCyclotronPlasma01 natural sciencesIon sourcelaw.inventionion sourceslawMagnet0103 physical sciencesOptoelectronicsRadio frequencypower efficiency010306 general physicsbusinessInstrumentationElectrical efficiencyReview of Scientific Instruments
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State-space formulation of scalar Preisach hysteresis model for rapid computation in time domain

2015

A state-space formulation of classical scalar Preisach model (CSPM) of hysteresis is proposed. The introduced state dynamics and memory interface allow to use the state equation, which is rapid in calculation, instead of the original Preisach equation. The main benefit of the proposed modeling approach is the reduced computational effort which requires only a single integration over the instantaneous line segment in the Preisach plane. Numerical evaluations of the computation time and model accuracy are provided in comparison to the CSPM which is taken as a reference model.

010302 applied physicsMemory interfacePreisach model of hysteresis0209 industrial biotechnologyApplied MathematicsComputationScalar (mathematics)02 engineering and technologySystems and Control (eess.SY)01 natural sciences020901 industrial engineering & automationLine segmentControl theoryModeling and Simulation0103 physical sciencesFOS: Electrical engineering electronic engineering information engineeringApplied mathematicsComputer Science - Systems and ControlTime domainReference modelMathematics
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Study of the multipactor phenomenon using a full-wave integral equation technique

2017

Abstract Multipactor effect is a well-known phenomenon of RF breakdown in satellite payloads which degrades components, generates undesirable harmonics, contributes to power dissipation and increases noise in communications. Traditionally, multipactor has been investigated with the aim of obtaining the so-called multipactor threshold voltage, or to present different multipaction detection methods. However, very little attention has been focused on analysing this phenomenon using a multimodal approach. The main goal of this work is to analyse the interaction between a multipactor current and a realistic microwave cavity by means of a rigorous and accurate formulation. For the first time to t…

010302 applied physicsMultipactor effect020206 networking & telecommunications02 engineering and technologyDissipation01 natural sciencesNoise (electronics)Integral equationAdmittance parametersHarmonics0103 physical sciences0202 electrical engineering electronic engineering information engineeringElectronic engineeringElectrical and Electronic EngineeringRepresentation (mathematics)Microwave cavityMathematicsAEU - International Journal of Electronics and Communications
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Hydrodynamic Modeling of Transport and Noise Phenomena in Bipolar Two-Terminal Silicon Structures

1998

International audience

010302 applied physicsNoise temperatureMaterials scienceSiliconMechanical EngineeringShot noisechemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciences[SPI.TRON]Engineering Sciences [physics]/Electronics[PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph]NoisechemistryTerminal (electronics)Mechanics of Materials0103 physical sciencesElectronic engineeringGeneral Materials Science[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]0210 nano-technologyComputingMilieux_MISCELLANEOUSMaterials Science Forum
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Analysis of thin high-k and silicide films by means of heavy ion time-of-flight forward-scattering spectrometry

2006

The use of forward scattered heavy incident ions in combination with a time-of-flight-energy telescope provides a powerful tool for the analysis of very thin (5–30 nm) films. This is because of greater stopping powers and better detector energy resolution for heavier ions than in conventional He-RBS. Because of the forward scattering angle, the sensitivity is greatly enhanced, thus reducing the ion beam induced desorption during the analysis of very thin films. The drawback of forward scattering angle is the limited mass separation for target elements. We demonstrate the performance of the technique with the analysis of 25 nm thick NiSi films and atomic layer deposited 6 nm thick HfxSiyOz f…

010302 applied physicsNuclear and High Energy PhysicsMaterials scienceIon beamSiliconbusiness.industryScatteringForward scatterchemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnology01 natural sciences7. Clean energyIonElastic recoil detectionTime of flightchemistry0103 physical sciencesOptoelectronicsAtomic physicsThin film0210 nano-technologybusinessInstrumentationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Comparison of Single Event Transients Generated at Four Pulsed-Laser Test Facilities-NRL, IMS, EADS, JPL

2012

Four pulsed-laser single-event effects systems, differing in wavelength and pulse width, were used to generate single event transients in a large-area silicon photodiode and an operational amplifier (LM124) to determine how transient amplitude and charge collection varied among the different systems. The optical wavelength and the focused spot size are the primary factors influencing the resultant charge density profile. In the large-area photodiode the transients can be distorted by high charge-injection densities that occur for tightly focused, higher energy optical pulses. When the incident laser-pulse energies are corrected for reflection losses and photon efficiency, with collection de…

010302 applied physicsNuclear and High Energy PhysicsMaterials sciencePhotonta114010308 nuclear & particles physicsbusiness.industryTransistorLaser01 natural sciences7. Clean energy[SPI.TRON]Engineering Sciences [physics]/Electronicslaw.inventionPhotodiodeSemiconductor laser theoryWavelengthOpticsNuclear Energy and Engineeringlaw0103 physical sciencesOptoelectronicsTransient (oscillation)Electrical and Electronic EngineeringbusinessPulse-width modulationIEEE Transactions on Nuclear Science
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Stopping cross-section measurements of 4He in TiN1.1O0.27

2000

Abstract The stopping cross-section for 4He projectiles in TiNx compounds has been measured using the backscattering method. A multi-compound marker layer deposited between the test film and the substrate was used to obtain the stopping cross-section at several energies with one energy of the incident beam. Two RBS spectra at definite tilt angles of the sample are taken for each beam energy. The assistance of computer codes to synthesize RBS spectra is very useful to obtain the pertinent information from the displacements of the peaks of the marker layers. Stopping cross-section values are obtained with an estimated uncertainty of about 6%.

010302 applied physicsNuclear and High Energy PhysicsMaterials scienceProjectile02 engineering and technologySubstrate (electronics)021001 nanoscience & nanotechnology01 natural sciencesSpectral lineCross section (physics)Tilt (optics)0103 physical sciencesAtomic physics0210 nano-technologyInstrumentationLayer (electronics)Beam energyEnergy (signal processing)Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Radiation resistance of nanolayered silicon nitride capacitors

2020

Abstract Single-layered and multi-layered 20–60 nm thick silicon nitride (Si3N4) dielectric nanofilms were fabricated using a low-pressure chemical vapour deposition (LPCVD) method. The X-ray photoelectron spectroscopy (XPS) confirmed less oxygen content in the multi-layered nanofilms. The capacitors with Si3N4 multilayer demonstrated a tendency to a higher breakdown voltage compared to the capacitors with Si3N4 single layer. Si3N4 nanofilms and capacitors with Si3N4 dielectric were exposed to 1 kGy dose of gamma photons. Fourier transform infrared (FTIR) spectroscopy analysis showed that no modifications of the chemical bonds of Si3N4 were present after irradiation. Also, gamma irradiation…

010302 applied physicsNuclear and High Energy PhysicsMaterials sciencebusiness.industry02 engineering and technologyDielectricChemical vapor deposition021001 nanoscience & nanotechnology01 natural sciencesCapacitancelaw.inventionchemistry.chemical_compoundCapacitorSilicon nitridechemistrylaw0103 physical sciencesOptoelectronicsBreakdown voltageIrradiation0210 nano-technologybusinessInstrumentationRadiation resistanceNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Mechanisms of Electron-Induced Single-Event Upsets in Medical and Experimental Linacs

2018

In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs are most commonly used due to their availability and flexibility. Whereas previous efforts were made to characterize the cross sections at higher energies, where the nuclear interaction cross section is higher, the focus of this paper is on the complete overview of relevant electron energies. Irradiations at an electron linac were made with two different devices, with a large difference in feature size. The irradiations at an experimental linac were performed with varying en…

010302 applied physicsNuclear and High Energy PhysicsMaterials scienceta114010308 nuclear & particles physicselectronsElectron linacElectronhiukkaskiihdyttimetelektronitparticle accelerators01 natural sciencesLinear particle acceleratorNuclear physicsNuclear interactionradiation physicsCross section (physics)säteilyfysiikkaNuclear Energy and Engineering0103 physical sciencesElectrical and Electronic EngineeringEvent (particle physics)IEEE Transactions on Nuclear Science
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Impact of the molecular structure of an indandione fragment containing azobenzene derivatives on the morphology and electrical properties of thin fil…

2016

Abstract The solution casting method is low-cost processing method. Moreover, it is possible to prepare amorphous thin films by using this method, and thus, both optical quality and electrical properties could be improved in compare to polycrystalline films made by thermal evaporation in vacuum. Therefore, low-molecular-weight compounds that form amorphous structure from solution could be promising in organic electronics. In this work film morphology, molecule energy levels, and charge carrier mobility in thin films of indandione fragment containing azobenzene derivatives were studied. Deep charge carrier trapping states that drastically influenced charge carrier mobility were observed for …

010302 applied physicsOrganic electronicsMaterials science02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesAmorphous solidchemistry.chemical_compoundAzobenzenechemistryElectron affinity0103 physical sciencesOrganic chemistryPhysical chemistryGeneral Materials ScienceCharge carrierCrystalliteThin filmIonization energy0210 nano-technologyMaterials Chemistry and Physics
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