Search results for "Exciton"
showing 10 items of 317 documents
Exciton luminescence of boron nitride nanotubes and nano-arches
2006
We report photoluminescence (PL) and PL-excitation spectroscopy of BN nanotubes (nt-BN) mixed with some residual hexagonal crystalline (h-BN) starting material, and of pure h-BN microcrystalline powder. The nanotube phase exhibits a broad-band PL near 380 nm, in agreement with a published report of cathodoluminescence from a sample comprising >90% nanotubes. This emission is almost 3 eV lower in energy than unrelaxed exciton states found in recent all-electron theories of nt-BN and h-BN and about 1.4 eV lower than the lowest (perturbed dark?) exciton seen in absorption of nt-BN. This may suggest that excitons in nt-BN vibrationally relax to self-trapped states before emitting, a path found …
Dependence of Exciton Mobility on Structure in Single-Walled Carbon Nanotubes
2010
Optically generated excitons in semiconducting single-walled carbon nanotubes (SWCNTs) display substantial diffusional mobility. This property allows excitons to encounter ∼104 carbon atoms during their lifetime and accounts for their efficient deactivation by sparse quenching sites. We report here experimental determinations of the mobilities of optically generated excitons in 10 different (n,m) species of semiconducting SWCNTs. Exciton diffusional ranges were deduced from measurements of stepwise photoluminescence quenching in selected individual SWCNTs coated with sodium deoxycholate surfactant and immobilized in agarose gel. A refined data analysis method deduced mean exciton ranges fro…
Photoluminescence of Ga-face AlGaN/GaN single heterostructures
2001
Abstract The radiative recombination in Ga-face Al 0.30 Ga 0.70 N/GaN single heterostructures (SHs) was studied by photoluminescence (PL) measurements. An energy shift of the excitonic transitions toward higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. In addition to these exciton lines, a broad band energetically localized between the exciton lines and the LO-phonon replica was noticed in the undoped SH. From its energy position, excitation power dependence, as well as temperature behaviour, we have attributed this luminescence to the H -band (HB), which is representative of the two-dimensional electron gas (2DEG) recombination.
Annealing-induced Changes in the Electronic and Structural Properties of ZnTe Substrates
2000
The aim of this study is to demonstrate that the electronic and structural properties of II–VI substrates, here ZnTe, can be dramatically affected by thermal heating at temperatures in the range of those typically used in the epitaxial metalorganic chemical vapor deposition processes. Photoluminescence response shows that annealing at these temperatures produces a reduction of the sample crystalline quality, decreasing the free exciton emission relative to the deep level related one. Some factors, like the change in the charge and stress state of dislocations, Cu diffusion, and oxygen incorporation, could be responsible for changes in the substrate properties, which can produce stresses and…
Luminescence in SrTiO3and LiNbO3Crystals Under High Density Pulsed Electron Excitation
2004
The time-resolved luminescence as well as stationary excited luminescence in SrTiO3 (undoped, Nb and Pb doped) and LiNbO3 (congruent and stoichiometric) single crystals was studied. The charge-transfer vibronic exciton in the regular oxy-anion site is suggested to be responsible for luminescence bands at 2.8 eV and 2.75 eV for SrTiO3 and LiNbO3 crystals respectively. It is suggested that luminescence band observed in SrTiO3 at ∼2.2-2.3 eV above 80 K possibly is due to some defect common for all SrTiO3 crystals studied.
Photoluminescence of Si nanocrystals embedded in SiO2: Excitation/emission mapping
2014
Time-resolved photoluminescence from Si nanocrystals produced by 1100∘C thermal annealing of SiOx/SiO2 multilayers were investigated by tunable laser excitation, achieving a detailed excitation/emission pattern in the visible and UV range. The emission lineshape is a gaussian curve inhomogenously broadened because of the size distribution of Si nanocrystals, the excitation spectrum consists of the overlap of two gaussian bands centered around 3.4 and 5.1 eV. The mapping of luminescence spectral components with the lifetime points out the energy cubic dependence of the spontaneous emission rate. These findings are interpreted on the basis of models proposed in literature that associate this …
Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
2000
Scanning electron microscopy, micro-Raman, and photoluminescence (PL) measurements are reported for Mg-doped GaN films grown on (0001) sapphire substrates by low-pressure metalorganic chemical vapor phase deposition. The surface morphology, structural, and optical properties of GaN samples with Mg concentrations ranging from 1019 to 1021 cm−3 have been studied. In the scanning micrographs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional growth. The density and size of these structures increase with the amount of magnesium incorporated in the samples. In the photoluminescence spectra, intense lines were found at 3.36 and 3.31 eV on the tr…
Growth and optical characterization of indirect-gap AlxGa1−xAs alloys
1999
Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…
Modulation of the electronic properties of GaN films by surface acoustic waves
2003
We report on the interaction between photogenerated electron-hole pairs and surface acoustic waves (SAW) in GaN films grown on sapphire substrates. The spatial separation of photogenerated carriers by the piezoelectric field of the SAW is evidenced by the quenching of the photoluminescence (PL) intensity. The quenching levels in GaN are significantly smaller than those measured in GaAs under similar conditions. The latter is attributed to the lower exciton ionization efficiency and carrier separation probabilities mediated by the piezoelectric effect. The PL spectra also evidence energy shifts and broadenings of the electronic transitions, which are attributed to the band gap modulation by …
Plasmon-induced slow aging of exciton generation and dissociation for stable organic solar cells
2016
Fast degradation is a major issue with organic photovoltaics (OPVs). Integrating plasmonics with OPVs has improved their efficiency; however, the stability effects are unknown. We demonstrate that plasmonic effects can improve the lifetime and efficiency. The aging effects on charge carrier generation and transport are investigated. Confocal time-resolved photoluminescence of Au nanoparticle (NP) doped polymer blend was performed to understand the plasmonic effects on excited-state dynamics. Hot exciton generation is observed directly at the Au-NP surface, which contributed to achieving a nearly perfect exciton dissociation yield. We found that slow aging of the plasmonic effect and the hot…