Search results for "FILMS"

Temperature-Induced Structural Transitions in the Gallium-Based MIL-53 Metal–Organic Framework

2013

We report a structural and thermodynamic investigation of the phase behavior of Ga(OH,F)-MIL-53, a gallium-based metal–organic framework (MOF) having the MIL-53 topology containing 0.7 wt % fluorine bonded to the metal. Despite some small structural differences, especially for the hydrated form, the overall physical chemistry behavior of Ga(OH,F)-MIL-53 is very similar to standard fluorine free Ga-MIL-53 material. A combination of in situ X-ray diffraction, in situ Fourier transform infrared spectroscopy, differential scanning calorimetry, and heat capacity measurements allowed us to establish that Ga(OH,F)-MIL-53 under vacuum (i.e., the empty material) exhibits two stable phases: a nonporo…

l-Arabinose Conformers Adsorption on Ruthenium Surfaces: A DFT Study

2012

Adsorption of 5 L-arabinose tautomers – one acyclic and four cyclic (α and β, pyranose and furanose) species – on a ruthenium surface was studied as a precursor-process of the, nowadays more and more, industrially important sugar catalytic hydrogenation on metal surfaces in water medium. The study was mostly referred to a 37-atom metal catalyst fragment, even though border-effects on the adsorption processes were also checked employing a 61-atom metal fragment. In order to figure out conformational effects on the title process the tautomer flexibility was, at first, investigated by the genetic-algorithm based code Balloon, considering the conformational spaces of the different aquo tautomer…

Rhodium catalyzed oxidative coupling of salicylaldehydes with diazabicyclic olefins: a one pot strategy involving aldehyde C–H cleavage and π-allyl c…

2013

An efficient one pot strategy for the synthesis of cyclopentene fused chromanone derivatives through the direct oxidative coupling of salicylaldehydes with bicyclic olefins in the presence of a rhodium-copper catalyst system is described. This is the first report on the ring opening-ring closing of bicyclic hydrazines via metal catalyzed oxidative coupling reaction.

DELAYED ELECTRON EMISSION OF NEGATIVELY CHARGED TUNGSTEN CLUSTERS

1996

The delayed electron emission of negatively charged tungsten clusters has been investigated on a time scale from 1 to 500 ms. After being stored in a Penning trap clusters ions [Formula: see text] were heated via multiphoton absorption (hν=1.81 eV). In contrast to alkali and coinage metals no photofragmentation could be detected. Instead, for all cluster sizes studied so far only a decrease in the initial ion intensity as a function of time after excitation was observed. This decrease is not caused by ion loss from the trap, but has to be attributed to neutralization via delayed electron emission. The presented results strongly suggest that this process can be viewed as “thermionic emissio…

Between wor(l)ds... or completely lost in translation? O współczesnych "tłumaczeniach" tytułów megaprodukcji filmowych. Od "Wirującego seksu " (1987)…

2018

In the present article, entitled Between Wor(l)ds... OR completely lost in translation? On contemporary “translations” of the titles of film blockbusters. From “Wirujący seks” (1987) and “Minionki” (2010-2017) to “Przełęcz ocalonych” (2016), its author - being a philologist, a linguist, a translation-studies researcher, and a regular picturegoer, takes into practical consideration selected translations (mainly from English into Polish) of several dozen film blockbusters having been produced in the last 20 years. On the basis of available resources, which are relatively few regarding the matter in ąuestion, the author makes an attempt at identifying and defining a rangę of formal and informa…

Y en a pas un sur cent mais pourtant ils existent : les films militants anarchistes français, un cinéma invisible mais effectif

2007

Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs process

2016

A new chemistry has been developed to deposit GaAs, the quintessential compound semiconductor. The ALD process is based on a dechlorosilylation reaction between GaCl3 and (Et3Si)3As. Characteristic ALD growth was demonstrated, indicating good applicability of the alkylsilyl arsenide precursor. ALD of GaAs produced uniform, amorphous and stoichiometric films with low impurity content. This was done with saturating growth rates and an easily controlled film thickness. Crystallization was achieved by annealing. Even though the growth rate strongly decreased with increasing deposition temperature, good quality film growth was demonstrated at 175 to 200 °C, indicating the presence of an ALD wind…

Single- and Double-Strand Breaks of Dry DNA Exposed to Protons at Bragg-Peak Energies

2017

International audience; Ultrathin layers (<20 nm) of pBR322 plasmid DNA were deposited onto 2.5 μm thick polyester films and exposed to proton Bragg-peak energies (90–3000 keV) at various fluences. A quantitative analysis of radio-induced DNA damage is reported here in terms of single- and double-strand breaks (SSB and DSB, respectively). The corresponding yields as well as G-values and the cross sections exhibit fairly good agreement with the rare available data, stemming from close experimental conditions, namely, based on α particle irradiation. SSB/DSB rates appear to be linear when plotted against linear energy transfer (LET) in the whole energy range studied. All the data present a ma…

High-Pressure Properties of Wolframite-Type ScNbO4

2022

In this work, we used Raman spectroscopic and optical absorption measurements and first-principles calculations to unravel the properties of wolframite-type ScNbO4 at ambient pressure and under high pressure. We found that monoclinic wolframite-type ScNbO4 is less compressible than most wolframites and that under high pressure it undergoes two phase transitions at ∼5 and ∼11 GPa, respectively. The first transition induces a 9% collapse of volume and a 1.5 eV decrease of the band gap energy, changing the direct band gap to an indirect one. According to calculations, pressure induces symmetry changes (P2/c–Pnna–P2/c). The structural sequence is validated by the agreement between phonon calcul…

Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma

2018

The atomic layer deposition (ALD) of AlN from AlCl3 was investigated using a thermal process with NH3 and a plasma-enhanced (PE)ALD process with Ar/NH3 plasma. The growth was limited in the thermal process by the low reactivity of NH3, and impractically long pulses were required to reach saturation. Despite the plasma activation, the growth per cycle in the PEALD process was lower than that in the thermal process (0.4 Å vs 0.7 Å). However, the plasma process resulted in a lower concentration of impurities in the films compared to the thermal process. Both the thermal and plasma processes yielded crystalline films; however, the degree of crystallinity was higher in the plasma process. The fi…