Search results for "Ferro"

showing 10 items of 2451 documents

Ultrafast antiferromagnetic switching in NiO induced by spin transfer torques

2020

NiO is a prototypical antiferromagnet with a characteristic resonance frequency in the THz range. From atomistic spin dynamics simulations that take into account the crystallographic structure of NiO, and in particular a magnetic anisotropy respecting its symmetry, we describe antiferromagnetic switching at THz frequency by a spin transfer torque mechanism. Sub-picosecond S-state switching between the six allowed stable spin directions is found for reasonably achievable spin currents, like those generated by laser induced ultrafast demagnetization. A simple procedure for picosecond writing of a six-state memory is described, thus opening the possibility to speed up current logic of electron…

Materials scienceOrders of magnitude (temperature)Physics::OpticsFOS: Physical sciences02 engineering and technology01 natural sciences0103 physical sciencesAntiferromagnetism010306 general physicsSpin-½Condensed Matter - Materials ScienceCondensed matter physicsNon-blocking I/OSpin-transfer torqueMaterials Science (cond-mat.mtrl-sci)Computational Physics (physics.comp-ph)021001 nanoscience & nanotechnologySymmetry (physics)3. Good healthCondensed Matter - Other Condensed MatterMagnetic anisotropyPicosecondCondensed Matter::Strongly Correlated Electrons0210 nano-technologyPhysics - Computational PhysicsOther Condensed Matter (cond-mat.other)
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Dielectric nonlinearity of ferroelectric solid solutions PMN-PZN and PMN-PNN

2001

Abstract Obtaining of novel thin film materials for electrically tuneable capacities is one of the current problems of ferroelectric material application. The most appropriate materials are the ferroelectric lead-containing niobates: PbMg1/3Nb2/3O3 (PMN), PhZn1/3Nb2/3Os (PZN), PbNi1/3Nb2/3O3 (PNN) and their solid solutions were synthesized by solid state reactions at 800–900 °C from oxides. Results of the studies of thermal dependence of dielectric permeability and loss factors of the synthesized solutions are provided together with reciprocal dielectric permeability as function of temperature and electric field intensity. The dielectric characteristics of nonlinear materials are reported e…

Materials sciencePermeability (electromagnetism)Electric fieldDielectric lossDielectricThin filmComposite materialCondensed Matter PhysicsFerroelectricityIntensity (heat transfer)Electronic Optical and Magnetic MaterialsSolid solutionFerroelectrics
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Influence of Compressive Stress on Dielectric and Ferroelectric Properties of the(Na0.5Bi0.5)0.7Sr0.3TiO3Ceramics

2013

Good quality lead-free ceramics of (Na0.5Bi0.5)0.7Sr0.3TiO3(NBTS30) have been produced by a solid phase sintering process. The dependence of dielectric and ferroelectric properties on the unaxial pressure (0–1200 bar) were investigated. A shift and decrease of maximum value of e, decrease of the thermal hysteresis and coercive field and increase of polarization with increasing pressure were observed. The results were discussed in terms of an elastic changes in inter-ionic distances in a crystal structure and switching nanoregions under the action of pressure. The NBTS30 ceramic is expected to be a new promising candidate for lead-free electronic material.

Materials sciencePhase (matter)visual_artvisual_art.visual_art_mediumSinteringCeramicDielectricCoercivityComposite materialPolarization (electrochemistry)FerroelectricityBar (unit)IOP Conference Series: Materials Science and Engineering
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A New Opto-dielectric Effect Based on the Photoisomerization of Azo Compounds in Ferroelectric Liquid Crystals

1995

Materials sciencePhotoisomerizationLiquid crystalDielectricPhysical and Theoretical ChemistryPhotochemistryFerroelectricityZeitschrift für Physikalische Chemie
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A multiaxial electrical switching in a one-dimensional organic–inorganic (pyrrolidinium)2Cd2I6ferroelectric and photoluminescent crystal

2021

Ferroelectric materials exhibiting more than one polar phase are very attractive in terms of application. The advantage of such materials is temperature-dependent switching between two different ferroelectric states. Here we report on the discovery of a unique, continuous ferroelectric – ferroelectric transformation in (C4H10N)2[Cd2I6], PCdI at 220 K. Thermal measurements suggest that phase transition is close to the continuous one. Both phases belong to the same polar monoclinic Cc space group. Temperature-variable X-ray diffraction measurements of single crystals confirm the polar nature of the two phases (I and II). The anionic network is in the form of [Cd2I6]2− 1D chains, with pyrrolid…

Materials sciencePhotoluminescence02 engineering and technologyGeneral ChemistryDielectric010402 general chemistry021001 nanoscience & nanotechnology01 natural sciencesFerroelectricity0104 chemical sciencesPyroelectricityCrystalCondensed Matter::Materials ScienceCrystallographyPhase (matter)Materials ChemistryPhotoluminescence excitation0210 nano-technologyMonoclinic crystal systemJournal of Materials Chemistry C
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X-RAY PHOTOEMISSION ELECTRON MICROSCOPE DETERMINATION OF ORIGINS OF ROOM TEMPERATURE FERROMAGNETISM AND PHOTOLUMINESCENCE IN HIGHCo-CONTENTCoxZn1-xOF…

2014

In this paper, we reported on the X-ray photoemission electron microscope (XPEEM) determination of magnetic and luminescence origins for two CoxZn1-xO films. The cobalt fraction x of radio frequency co-sputtered samples were 0.86(2) and 0.92(2), respectively. Films were ferromagnetic and semiconductive. Unique narrow green color lines beside the ZnO intrinsic emissions were found with a decay time in microsecond range at room temperature. Origins of magnetic and luminescence properties were determined with XPEEM. The X-ray absorption near edge structure at the Co  L3-edge denoted that Co was partially oxidized, and phase-contrast images together with chemical composition identification furt…

Materials sciencePhotoluminescenceMagnetismExcitonAnalytical chemistrychemistry.chemical_elementSurfaces and InterfacesCondensed Matter PhysicsSurfaces Coatings and FilmsNanoclusterschemistryFerromagnetismMaterials ChemistryAntiferromagnetismLuminescenceCobaltSurface Review and Letters
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A perpendicular graphene/ferromagnet electrode for spintronics

2020

We report on the large-scale integration of graphene layers over a FePd perpendicular magnetic anisotropy (PMA) platform, targeting further downscaling of spin circuits. An L10 FePd ordered alloy showing both high magneto-crystalline anisotropy and a low magnetic damping constant, is deposited by magnetron sputtering. The graphene layer is then grown on top of it by large-scale chemical vapor deposition. A step-by-step study, including structural and magnetic analyses by x-ray diffraction and Kerr microscopy, shows that the measured FePd properties are preserved after the graphene deposition process. This scheme provides a graphene protected perpendicular spin electrode showing resistance t…

Materials sciencePhysics and Astronomy (miscellaneous)02 engineering and technologyChemical vapor deposition01 natural scienceslaw.inventionCondensed Matter::Materials Sciencelaw0103 physical sciencesPerpendicular[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]AnisotropyMaterialsComputingMilieux_MISCELLANEOUS[PHYS]Physics [physics]010302 applied physicsSpintronicsCondensed matter physicsGrapheneSputter deposition021001 nanoscience & nanotechnologyInnovacions tecnològiquesFerromagnetismMagnetic damping0210 nano-technologyApplied Physics Letters
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Enhancement of spin Hall conductivity in W-Ta alloy

2020

Generating pure spin currents via the spin Hall effect in heavy metals has been an active topic of research in the last decade. In order to reduce the energy required to efficiently switch neighbouring ferromagnetic layers for applications, one should not only increase the charge- to-spin conversion efficiency but also decrease the longitudinal resistivity of the heavy metal. In this work, we investigate the spin Hall conductivity in W_{1-x}Ta_{x} / CoFeB / MgO (x = 0 - 0.2) using spin torque ferromagnetic resonance measurements. Alloying W with Ta leads to a factor of two change in both the damping-like effective spin Hall angle (from - 0.15 to - 0.3) and longitudinal resistivity (60 - 120…

Materials sciencePhysics and Astronomy (miscellaneous)530 PhysicsAlloyFOS: Physical sciences02 engineering and technologyengineering.material01 natural sciencesMetalCondensed Matter::Materials ScienceElectrical resistivity and conductivity0103 physical sciencesSpin-½010302 applied physicsCondensed Matter - Materials ScienceCondensed matter physicsEnergy conversion efficiencyMaterials Science (cond-mat.mtrl-sci)021001 nanoscience & nanotechnology530 PhysikFerromagnetic resonanceFerromagnetismvisual_artSpin Hall effectvisual_art.visual_art_mediumengineeringCondensed Matter::Strongly Correlated Electrons0210 nano-technology
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Conductance control at the LaAlO3/SrTiO3-interface by a multiferroic BiFeO3 ad-layer

2014

Multilayered BiFeO3 (BFO)/LaAlO3 (LAO) thin film samples were fabricated on SrTiO3 (STO) substrates by pulsed laser deposition. In this work, the ferroelectric polarization of a multiferroic BFO ad-layer on top of the quasi-two-dimensional electron gas (2DEG) at the LAO/STO interface is used to manipulate the conductivity of the quasi-2DEG. By microstructuring the conductive area of the LAO/STO-interface, a four-point geometry for the measurement of the resistivity was achieved. Piezo force microscopy allows for imaging and poling the spontaneous ferroelectric polarization of the multiferroic layer. The resistance changes showed a linear dependence on the area scanned and a hysteretic behav…

Materials sciencePhysics and Astronomy (miscellaneous)Condensed matter physicsFerromagnetismPolingMultiferroicsThin filmPolarization (electrochemistry)Layer (electronics)FerroelectricityPulsed laser depositionApplied Physics Letters
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The effect of interface roughness on exchange bias in La0.7Sr0.3MnO3 - BiFeO3 heterostructures

2016

We characterized the interfaces of heterostructures with different stack sequences of La0.7Sr0.3MnO3/BiFeO3 (LSMO/BFO) and BFO/LSMO using TEM revealing sharp and rough interfaces, respectively. Magnetometry and magnetoresistance measurements do not show a detectable exchange bias coupling for the multistack with sharp interface. Instead, the heterostructures with rough and chemically intermixed interfaces exhibit a sizable exchange bias coupling. Furthermore, we find a temperature-dependent irreversible magnetization behavior and an exponential decay of coercive and exchange bias field with temperature suggesting a possible spin-glass-like state at the interface of both stacks.

Materials sciencePhysics and Astronomy (miscellaneous)Condensed matter physicsMagnetoresistanceStrongly Correlated Electrons (cond-mat.str-el)FOS: Physical sciencesHeterojunction02 engineering and technologyCoercivity021001 nanoscience & nanotechnology01 natural sciencesMagnetizationCondensed Matter - Strongly Correlated ElectronsCondensed Matter::Materials ScienceExchange biasFerromagnetism0103 physical sciencesMultiferroicsCondensed Matter::Strongly Correlated ElectronsExponential decay010306 general physics0210 nano-technology
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