6533b862fe1ef96bd12c7730
RESEARCH PRODUCT
Ultrafast antiferromagnetic switching in NiO induced by spin transfer torques
Pascal ThibaudeauThéophile ChiracOlena GomonayMichel ViretJean-yves Chauleausubject
Materials scienceOrders of magnitude (temperature)Physics::OpticsFOS: Physical sciences02 engineering and technology01 natural sciences0103 physical sciencesAntiferromagnetism010306 general physicsSpin-½Condensed Matter - Materials ScienceCondensed matter physicsNon-blocking I/OSpin-transfer torqueMaterials Science (cond-mat.mtrl-sci)Computational Physics (physics.comp-ph)021001 nanoscience & nanotechnologySymmetry (physics)3. Good healthCondensed Matter - Other Condensed MatterMagnetic anisotropyPicosecondCondensed Matter::Strongly Correlated Electrons0210 nano-technologyPhysics - Computational PhysicsOther Condensed Matter (cond-mat.other)description
NiO is a prototypical antiferromagnet with a characteristic resonance frequency in the THz range. From atomistic spin dynamics simulations that take into account the crystallographic structure of NiO, and in particular a magnetic anisotropy respecting its symmetry, we describe antiferromagnetic switching at THz frequency by a spin transfer torque mechanism. Sub-picosecond S-state switching between the six allowed stable spin directions is found for reasonably achievable spin currents, like those generated by laser induced ultrafast demagnetization. A simple procedure for picosecond writing of a six-state memory is described, thus opening the possibility to speed up current logic of electronic devices by several orders of magnitude.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2020-04-21 |