Search results for "Field effect"
showing 4 items of 44 documents
Quantum Mechanical Co-Adsorption Modelling of Real Electrically Controlled Semiconductor Gas Sensors
2009
Abstract Co-adsorption of several gases is still a challenge due to the variety of reaction paths at the sensitive surface, and their competition for the adsorption sites. With an extended Wolkenstein model and the gas kinetic theory, we find that for specific paths their sequence of exposition has an important influence on the layer resistance as well as on the time required to achieve equilibrium. Whilst only processes that involve charge transfer can be electrically detected, a good correlation between model and electrical measurements needs weakly chemisorbed (physisorbed) layers to be taken in account. Our study presents a SnO2 nano-film sensor with electrical control electrodes expose…
Glyphosate Sensor Based on Nanostructured Water-Gated CuO Field-Effect Transistor
2022
This research presents a comparative analysis of water-gated thin film transistors based on a copper oxide (CuO) semiconductor in the form of a smooth film and a nanostructured surface. A smooth CuO film was deposited through reactive magnetron sputtering followed by annealing in atmosphere at a temperature of 280 (Formula presented.) C. Copper oxide nanostructures were obtained by hydrothermal synthesis on a preliminary magnetron sputtered 2 nm thick CuO precursor followed by annealing at 280 (Formula presented.) C. An X-ray diffraction (XRD) analysis of the samples revealed the presence of a tenorite (CuO) phase with a predominant orientation of (002). Scanning electron microscopy (SEM) a…
Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection
2018
In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-to-noise ratio dependence on the transistor operating point.
Gold Au(I)6 Clusters with Ligand-Derived Atomic Steric Locking: Multifunctional Optoelectrical Properties and Quantum Coherence
2023
Funding Information: This work was supported by the ERC Advanced grant (DRIVEN, ERC‐2016‐AdG‐742829), the ERC grant (834742), the EU H2020‐MSCA‐RISE‐872049 (IPN‐Bio), the Academy of Finland's Centre of Excellence in Molecular Engineering of Biosynthetic Hybrid Materials Research (HYBER, 2014–2019), and Life‐Inspired Hybrid Materials (LIBER, 346108), Academy of Finland project fundings (No. 352900, 314810, 333982, 336144, 352780, 352930 and 353364), FinnCERES and Photonics Research and Innovation (PREIN) flagship programs. The authors acknowledge the provision of facilities and technical support by Aalto University OtaNano – Nanomicroscopy Center (Aalto‐NMC). | openaire: EC/H2020/834742/EU//…