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RESEARCH PRODUCT
Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection
Salvatore StivalaAntonio BenfanteAlfonso Carmelo CinoE.f. CalandraRalph KrupkeSimone DehmAntonino ParisiMarco A. GiambraRomain DanneauRiccardo PerniceAlessandro Busaccasubject
lcsh:Applied optics. PhotonicsTechnologyMaterials scienceAtomic and Molecular Physics and OpticInfraredGate dielectricPhysics::Optics02 engineering and technologyDielectricgraphene field effect transistor01 natural sciencesSettore ING-INF/01 - Elettronicalaw.inventionCondensed Matter::Materials Scienceinfrared detectorslaw0103 physical sciencesmicrowave transistorlcsh:QC350-467Electrical and Electronic Engineering010306 general physicsGraphene; graphene field effect transistors; infrared detectors; microwave transistors; Atomic and Molecular Physics and Optics; Electrical and Electronic Engineeringbusiness.industryGraphenePhotoconductivityTransistormicrowave transistorslcsh:TA1501-1820021001 nanoscience & nanotechnologyAtomic and Molecular Physics and Opticsinfrared detector2018-020-021849 ALDOptoelectronicsGraphene0210 nano-technologybusinessddc:600Microwavegraphene field effect transistorslcsh:Optics. LightDC biasdescription
In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-to-noise ratio dependence on the transistor operating point.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2018-04-01 | IEEE Photonics Journal |