Search results for "GALLIUM"
showing 10 items of 265 documents
Evaluation of Gallium Nitride Transistors in Electronic Power Conditioners for TWTAs
2015
The aim of this paper is to evaluate the benefits of replacing Si Mosfets transistors with enhancement mode GaN transistors in a Half-Bridge Zero Voltage and Zero Current Switching Power Switching Converter (ZVZCPS). This converter is usually used as power supply of the travelling-wave tube amplifiers (TWTAs) in aerospace applications. In this paper, firstly the converter is theoretically analyzed, obtaining its operation, losses and efficiency equations, these equations are used to obtain optimizations maps based on the main system parameters. In this way, the ideal design parameters can be visually obtained. These optimization maps are the key to quantify the potential benefits of GaN tra…
Different strategies towards the deterministic coupling of a single Quantum Dot to a photonic crystal cavity mode
2011
In this work we show two different procedures of fabrication aiming towards the systematic positioning of single InAs quantum dots (QDs) coupled to a GaAs photonic crystal (PC) microcavity. The two approaches are based on the molecular beam epitaxial (MBE) growth of site-controlled QDs (SCQDs) on pre-patterned structures. The PC microcavity (PCM) is introduced previous or after the growth, on each case. We demonstrate the InAs SCQD nucleation on pre-patterned PCMs and a method to perform the QD nucleation respect to an etched ruler that is used to position the PC structure after growth. For both types of structures, we have carried out microphotoluminescence (µPL) spectroscopy experiments a…
DC and 1/f noise characterization of cryogenically cooled pseudomorphic HEMT's
2002
Pseudomorphic (AlGaAs/InGaAs/GaAs) HEMT's have exhibited the best noise performance over the entire LF-to-microwave frequency range if compared to MESFET's and conventional GaAs HEMT's, due to either a reduced flicker noise, a lower G/R contribution and a smaller high-field diffusion noise. We have recently investigated the microwave (up to 18 GHz) noise properties of packaged pseudomorphic HEMT's from 290 K down to cryogenic temperature values. The current experimental work is aimed at extending such analysis to the LF noise range and at low temperatures. Cryogenic noise spectra (1 Hz to 100 KHz) and DC characteristics have therefore been recorded and the relevant observations on the devic…
Spatio-temporal structures of laser-induced anisotropy
1999
We report new observations of optical spatio-temporal structures formed in terbium gallium garnet when it is excited at resonance by a strong laser beam. We also present a theoretical description of this pattern formation, which accounts well for our observations. We finally discuss useful applications of both time and power dependence of these structures.
Raman measurements on GaN thin films for PV - purposes
2012
Raman scattering (RS) is a very important experimental tool to characterize the optical modes and another elementary excitations of materials. Among other issues it can determine for example the degree of crystalline quality and point defects like local modes. Therefore GaN - thin films and related compounds for photovoltaic purposes and as processed by several systems have been measured by this technique. The films were grown by Molecular Beam Epitaxy (MBE), Close Spaced Vapor Transport (CSVT) and Laser Ablation (LA) with the use of optimal growth parameters and substrates. Gallium nitride crystallizes in the wurtzite structure with 4 atoms in the unit cell and presents 7 allowed Raman mod…
Reduction of temperature coefficients in multicrystalline silicon solar cells after light-induced degradation
2015
This study focuses on the variations of the temperature coefficients after light-induced degradation (LID) of compensated multicrystalline silicon solar cells from three different ingots. The ingots have been chosen to see the effect of the compensation level, the resistivity and the impact of adding gallium to keep the resistivity as constant as possible along the ingot. The temperature coefficients of the efficiency experience a major decrease after LID on all ingots. We found that this decrease varies along the ingot height and does not correspond to the VOC drop. Moreover, no direct correlation with the interstitial oxygen concentration profiles could be seen.
Aluminum and Gallium Substitution in Yttrium and Lutetium Aluminum–Gallium Garnets: Investigation by Single-Crystal NMR and TSL Methods
2016
The work reports the results on 71Ga and 27Al NMR investigation of the gallium and aluminum ions distribution over tetrahedral and octahedral positions in the Y3Al5−x GaxO12:Ce single crystals and Lu3Al5−xGaxO12:Ce single-crystalline epitaxial films. The gallium content x varies between 0 and 5 in crystals and between 0.3 and 2 in films.. We find that in both the Y- and Lu-based solid solutions the larger gallium ions are preferably located at the tetrahedral position while the smaller aluminum ions prefer the octahedral position of the garnet host. Based on NMR data, the dependence of fractional occupation parameters of the tetrahedral site of Ga and Al ions on the Ga content is determined…
Structural characterization of original 3D gallium structures grown by LP‐MOCVD
2004
This study is concerned with the growth and characterization of metallic gallium 3D structures, obtained with a single growth step, by the LP-MOCVD technique on various substrates. Commercial organo-metallic is used as gallium precursor and nitrogen as carrier gas. The growth temperature and the reactor pressure are ranking between 500 and 700 °C, and between 150 and 700 torr, respectively. Depending on the elaboration conditions, different 3D structures are obtained such as droplets, cauliflowers, aggregates or thin stems, with micrometer sizes. The morphology, substrate surface density and thermal stability are studied by optical and scanning electron microscopy. At last, X-ray microanaly…
Novel GaN Based Solid State Power Amplifiers, Results, Advances and Comparison with Vacuum Tubes Based Microwave Power Modules
2018
Power amplifiers based on vacuum tubes or solid state are key items in a number of systems. Solid state technology is growing up for some applications and it may be complementary to the vacuum technology. This paperwork presents SSPA operational principles and performance. The GaN technology available in the market, the technology roadmap, a comparison with the vacuum tubes are introduced
New BDH-TTP/[MIII(C5O5)3]3– (M = Fe, Ga) Isostructural Molecular Metals
2012
Two new isostructural molecular metals-(BDH-TTP)(6)[M(III)(C(5)O(5))(3)]·CH(2)Cl(2) (BDH-TTP = 2,5-bis(1,3-dithiolan-2-ylidene)-1,3,4,6-tetrathiapentalene, where M = Fe (1) and Ga (2))-have been prepared and fully characterized. Compound 1 is a molecular conductor showing paramagnetic behavior, which is due to the presence of isolated [Fe(C(5)O(5))(3)](3-) complexes with high-spin S = (5)/(2) Fe(III) metal ions. The conductivity originates from the BDH-TTP organic donors arranged in a κ-type molecular packing. At 4 kbar, compound 1 behaves as a metal down to ∼100 K, showing high conductivity (∼10 S cm(-1)) at room temperature. When applying a pressure higher than 7 kbar, the metal-insulator…